公开(公告)号：US5717294A

公开(公告)日：1998-02-10

申请号：US395503

申请日：1995-02-27

申请人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

发明人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00 ,  H05H1/16

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.

摘要翻译： 真空室包含用于支撑晶片的第一电极和与第一电极相对的第二电极。 供应系统和耗尽系统连接到真空室。 该系统将反应性气体供应到室中，并且系统从室中排出废气。 射频电源连接到第一电极，用于在电极之间提供电力以产生电场E.环形磁体组件设置在室周围，用于产生磁场B，磁场B具有与中心平面相交的中心平面 电场E.磁体组件具有在磁场的中心平面中具有不同磁化轴的多个磁体元件。 电子由于电场E的外部产物（ExB）和磁场B产生的力而漂移。磁场B的中心平面从晶片的目标表面向上移动，使得磁力线 的磁场与基板的目标表面相交。

公开(公告)号：US5356515A

公开(公告)日：1994-10-18

申请号：US988809

申请日：1992-12-10

申请人： Yoshifumi Tahara ,  Yoshihisa Hirano ,  Masahiro Ogasawara ,  Isahiro Hasegawa ,  Keiji Horioka ,  Takaya Matsushita

发明人： Yoshifumi Tahara ,  Yoshihisa Hirano ,  Masahiro Ogasawara ,  Isahiro Hasegawa ,  Keiji Horioka ,  Takaya Matsushita

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.

摘要翻译： 一种干蚀刻方法，其包括将具有氧化物部分或氮化物部分的工件供应到处理容器中，将所述工件保持在所述处理容器内不高于0℃的温度，提供包括含有卤素的第一气体的蚀刻气体 元素和含有氧化数小于4的碳的第二气体和氧气到工件附近的区域，同时将工件的温度保持在不高于0℃的水平，并形成所述蚀刻的等离子体 用于利用所述等离子体蚀刻工件的氧化物部分或氮化物部分的气体。

公开(公告)号：US5770098A

公开(公告)日：1998-06-23

申请号：US212579

申请日：1994-03-16

申请人： Yoichi Araki ,  Koichiro Inazawa ,  Sachiko Furuya ,  Masahiro Ogasawara ,  Chishio Koshimizu ,  Tiejun Song

发明人： Yoichi Araki ,  Koichiro Inazawa ,  Sachiko Furuya ,  Masahiro Ogasawara ,  Chishio Koshimizu ,  Tiejun Song

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31116

摘要： In order to etch an object to be processed, such as a semiconductor wafer, the object to be processed is placed in a vacuum processing chamber, an etching gas is introduced into the vacuum processing chamber, and electrical power is applied to a pair of electrodes within the vacuum processing chamber by a high-frequency electrical power source. A mixed gas of carbon monoxide and a gas which does not contain hydrogen and which contains at least one element from the group IV elements and at least one element from group VII elements is used as the etching gas. A halogenated carbon gas, typically a fluorocarbon such as C.sub.4 F.sub.8, is used as the gas containing elements from the group IV and group VII elements. The concentration of carbon monoxide in the etching gas could be 50% or more. At least approximately 86% of an inert gas, such as argon, xenon, krypton, or N.sub.2 and O.sub.2 could be added to the etching gas. Use of the above etching gas enables a high etching selectivity and prevents the formation of fences.

摘要翻译： 为了蚀刻诸如半导体晶片的待处理对象，将待处理对象放置在真空处理室中，将蚀刻气体引入真空处理室，并且将电力施加到一对电极 在真空处理室内由高频电源。 作为蚀刻气体，使用一氧化碳和不含氢的含有IV族元素中的至少一种元素和来自VII族元素的至少一种元素的混合气体。 通常使用碳氟化合物如C4F8的卤代碳气作为来自IV族和VII族元素的含气体。 蚀刻气体中一氧化碳的浓度可以为50％以上。 至少约86％的惰性气体，例如氩气，氙气，氪气，或N 2和O 2可以添加到蚀刻气体中。 使用上述蚀刻气体能够实现高蚀刻选择性并防止栅栏的形成。

公开(公告)号：US08609549B2

公开(公告)日：2013-12-17

申请号：US13045988

申请日：2011-03-11

申请人： Sungtae Lee ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

发明人： Sungtae Lee ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32091

摘要： A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

摘要翻译： 提供了一种等离子体蚀刻方法，用于通过在非晶碳膜的图案作为最终掩模的非晶碳膜上形成的氧化硅膜或氮化硅膜上进行等离子体蚀刻，所述多层掩模包括具有 预定图案，在光致抗蚀剂层下形成的有机底部防反射涂层（BARC）膜，在BARC膜下面形成的SiON膜和形成在SiON膜下面的无定形碳膜。 在氧化硅膜或氮化硅膜的等离子体蚀刻开始时使用的初始掩模是在无定形碳膜上残留SiON膜的状态和无定形碳膜的膜厚比 残留SiON膜的膜厚小于或等于约14。

公开(公告)号：US07506610B2

公开(公告)日：2009-03-24

申请号：US11137516

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32577 ,  H01J37/32082 ,  H01J37/32174 ,  H01L21/31116

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 上电极被设置为面对放置在处理容器内的目标衬底。 电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。 电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

公开(公告)号：US07300881B2

公开(公告)日：2007-11-27

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US20050126488A1

公开(公告)日：2005-06-16

申请号：US11047595

申请日：2005-02-02

申请人： Masahiro Ogasawara ,  Kazuya Kato

发明人： Masahiro Ogasawara ,  Kazuya Kato

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/00 ,  C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32834 ,  H01J37/3244 ,  H01L21/67069

摘要： A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110 at which an upper electrode 112 is provided and a container unit 120 having a lower electrode 122 provided to face opposite the upper electrode 112, on which a substrate can be placed. An evacuation ring 126 is provided around the lower electrode 122 so as to divide the space in the processing chamber 100 into a plasma processing space 102 and an evacuation space 104. At the evacuation ring 126, through holes 126a and blind holes 126b which are fewer than the through holes 126a and open toward the plasma processing space 102 are formed. An insulation coating constituted of Y2O3 is applied onto the surface of the evacuation ring 126 towards the plasma processing space 102.

摘要翻译： 提供了一种具有高等离子体电阻并能够使异常放电最小化的排气环的等离子体处理装置。 处理室100包括设置有上电极112的天花板单元110和具有设置成与上电极112相对设置的下电极122的容器单元120，可以放置基板。 在下电极122周围设置有排气环126，以将处理室100中的空间分成等离子体处理空间102和抽空空间104。 在排气环126处形成通孔126a和盲孔126b，盲孔126b比通孔126a少并且朝向等离子体处理空间102开口。 由排气环126的表面向等离子体处理空间102施加由Y 2 O 3 3构成的绝缘涂层。

公开(公告)号：US4558510A

公开(公告)日：1985-12-17

申请号：US592596

申请日：1984-03-23

申请人： Keizo Tani ,  Masahiro Ogasawara

发明人： Keizo Tani ,  Masahiro Ogasawara

IPC分类号： H01L21/56 ,  H01L23/24 ,  H01L23/28 ,  H05K7/00 ,  H05K5/06 ,  H01L23/30

CPC分类号： H01L21/56 ,  H01L23/24 ,  H05K7/005 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01039

摘要： There is provided a method of producing a semiconductor device comprising a protecting silicone gel layer which covers a semiconductor chip and bonding wires for taking electrodes out of this chip, and a resin layer which has a smaller thermal expansion coefficient than that of this silicone gel layer at least part of which contacts the silicone gel layer. This method comprises the steps of: thermally expanding the silicone gel layer until it reaches the product environmental guarantee temperature which comes before the cure acceleration reaction in the resin layer; and completely curing the resin layer while maintaining the volume of the silicone gel layer at the same time, thereby fixedly adhering it with the other parts.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括覆盖半导体芯片的保护硅凝胶层和用于从该芯片取出电极的接合线，以及具有比该硅凝胶层的热膨胀系数小的热膨胀系数的树脂层 其至少一部分接触硅凝胶层。 该方法包括以下步骤：将硅胶凝胶层热膨胀直到达到在树脂层中固化加速反应之前产生的环境保护温度; 并在同时保持硅凝胶层的体积的同时完全固化树脂层，从而将其与其它部分固定。

公开(公告)号：US08298960B2

公开(公告)日：2012-10-30

申请号：US12497106

申请日：2009-07-02

申请人： Masahiro Ogasawara ,  Sungtae Lee

发明人： Masahiro Ogasawara ,  Sungtae Lee

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32091 ,  H01J37/32935 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31122

摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

摘要翻译： 一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜 包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。 在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。 在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。 在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

公开(公告)号：US07351665B2

公开(公告)日：2008-04-01

申请号：US11390449

申请日：2006-03-28

申请人： Masahiro Ogasawara

发明人： Masahiro Ogasawara

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/32935

摘要： In a first step and a thirst step, etching gases are used which contain fluorocarbon gases having C/F atom number ratios higher than that in a second step. A hole is formed to a midpoint in a silicon oxide film in the first step, the hole is formed until a base SiN film begins to be exposed or immediately before it is exposed in the second step, and overetching is performed in the third step. This enables even a hole having a fine diameter and a high aspect ratio to be formed in an excellent shape.

摘要翻译： 在第一步和第一步骤中，使用含有比第二步高的C / F原子数比的碳氟化合物气体的蚀刻气体。 在第一步骤中，在氧化硅膜的中点形成孔，直到基底SiN膜开始露出或在第二工序中暴露之前立即形成孔，并且在第3工序中进行过蚀刻。 这使得即使形成具有良好形状的细径和高纵横比的孔。