摘要:
A water-absorbent resin is provided which is suitable for absorbing polymer-containing viscous liquids, wherein the specific surface area measured by the BET multipoint technique using krypton gas as the adsorption gas is no less than 0.05 m2/g, and the water retention capacity for 0.9 wt % physiological saline is 5-30 g/g.
摘要:
A water-absorbent resin is provided which is suitable for absorbing polymer-containing viscous liquids, wherein the specific surface area measured by the BET multipoint technique using krypton gas as the adsorption gas is no less than 0.05 m2/g, and the water retention capacity for 0.9 wt % physiological saline is 5-30 g/g.
摘要:
The present invention relates to a crosslinked poly(meth)acrylic acid nitroxide compound resulting from crosslinking of a poly(meth)acrylic acid nitroxide compound, and an object of the present invention is to provide a method of inexpensively and easily producing a crosslinked poly(meth)acrylic acid nitroxide compound having a high radical concentration.The present invention is a method of producing a crosslinked poly(meth)acrylic acid nitroxide compound including a repeating unit represented by the general formula (2): (in the formula, R represents a hydrogen atom or a methyl group), comprising a nitroxidation step carried out in a state that a crosslinked poly(meth)acrylic acid imino compound resulting from crosslinking of a poly(meth)acrylic acid imino compound including a repeating unit represented by the general formula (1): (in the formula, R represents the same group as that represented by R in said general formula (2)) is dispersed in water.
摘要:
It is an object of the invention to provide a method of producing a crosslinked poly(meth)acrylic acid compound, in particular a method of producing a crosslinked poly(meth)acrylic acid nitroxide compound, which is a radical compound excellent in solvent stability.The invention is a method of producing a crosslinked poly(meth)acrylic acid compound resulting from crosslinking of a poly(meth)acrylic acid compound represented by the general formula (1): (in the formula, n Z1s represent a hydrogen atom(s) and/or an oxygen atom(s) having one unpaired electron, R represents a hydrogen atom or a methyl group and n represents an integer of 5 to 1000000), which method is characterized by comprising a polymerization step of polymerizing a (meth)acrylic acid compound represented by the general formula (2): (in the formula, Z2 represents a hydrogen atom when Z1 is a hydrogen atom, or a hydrogen atom or an oxygen atom having one unpaired electron when Z1 is an oxygen atom having one unpaired electron; and R represents the same group as R in the above general formula (1)) in the presence of a crosslinking agent.
摘要:
It is an object of the invention to provide a method of producing a crosslinked poly(meth)acrylic acid compound, in particular a method of producing a crosslinked poly(meth)acrylic acid nitroxide compound, which is a radical compound excellent in solvent stability.The invention is a method of producing a crosslinked poly(meth)acrylic acid compound resulting from crosslinking of a poly(meth)acrylic acid compound represented by the general formula (1): (in the formula, n Z1s represent a hydrogen atom(s) and/or an oxygen atom(s) having one unpaired electron, R represents a hydrogen atom or a methyl group and n represents an integer of 5 to 1000000), which method is characterized by comprising a polymerization step of polymerizing a (meth)acrylic acid compound represented by the general formula (2): (in the formula, Z2 represents a hydrogen atom when Z1 is a hydrogen atom, or a hydrogen atom or an oxygen atom having one unpaired electron when Z1 is an oxygen atom having one unpaired electron; and R represents the same group as R in the above general formula (1)) in the presence of a crosslinking agent.
摘要:
According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
摘要:
According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer.
摘要:
A multi-core processor includes a monitored processor core whose process result is to be monitored; a monitoring processor core group including two or more monitoring processors which can perform a process for monitoring the monitored processor core; an evaluating part configured to evaluate a processing load of the monitoring processor core group; and a controlling part configured to make the monitoring processor core group perform the process for monitoring the monitored processor core in a distributed manner if the processing load of the monitoring processor core group evaluated by the evaluating part is low, and make the monitoring processor of the monitoring processor core group perform the process for monitoring the monitored processor core if the processing load of the monitoring processor core group evaluated by the evaluating part is high, the monitoring processor performing a process whose priority is relatively low.
摘要:
A slewing-type working machine, including a base, an upper slewing body, a hydraulic motor slewing the upper slewing body, a hydraulic pump, a slewing operation device, a control valve controlling the hydraulic motor, pipe-lines connecting the hydraulic motor to the control valve, a hydraulic pressure source, communication valves switching communication and cutoff between the pipe-lines and a tank by pilot pressure, an electric motor, an electric storage device, communication selector valves on inlet sides of the communication valves, a switching control valve on an inlet side of the communication selector valves, and a controller. During slewing deceleration, the controller signals to switch the switching control valve to a connecting position and switch the communication selector valves to a pilot pressure supply position. In a slewing stopped state, the controller signals to switch the communication selector valves to a cutoff position and switch the communication valves to a communication cutoff position.
摘要:
A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.