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1.发明申请公开(公告)号：US20120108055A1
公开(公告)日：2012-05-03
申请号：US13345235
申请日：2012-01-06
IPC分类号： H01L21/768
CPC分类号： H01L24/16 , H01L21/6835 , H01L21/7682 , H01L21/76898 , H01L23/481 , H01L24/83 , H01L24/90 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/16145 , H01L2224/16147 , H01L2224/16225 , H01L2224/16237 , H01L2224/73204 , H01L2224/81141 , H01L2224/81191 , H01L2224/838 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/00012 , H01L2224/05552
摘要： After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.
摘要翻译： 在形成从其后表面侧穿过半导体衬底的环形沟槽形成并在沟槽内部和半导体衬底的后表面上形成绝缘膜之后，在绝缘膜和半导体衬底上形成通孔 从后表面侧的环形沟槽的内侧，露出在通孔的底部形成在半导体衬底的前表面上的表面保护绝缘膜。 在去除通孔底部的表面保护绝缘膜以形成露出元件表面电极的开口之后，在通孔和开口的内壁上形成连接到元件表面电极的接触电极，并且焊盘电极 由与所述接触电极相同的层形成在所述半导体衬底的后表面上。
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公开(公告)号：US20100155940A1
公开(公告)日：2010-06-24
申请号：US12640766
申请日：2009-12-17
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L25/0657 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/5386 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/81 , H01L24/94 , H01L25/074 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/05557 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/1147 , H01L2224/11472 , H01L2224/13009 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13021 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/16058 , H01L2224/16112 , H01L2224/16146 , H01L2224/274 , H01L2224/81136 , H01L2224/81345 , H01L2224/81365 , H01L2224/81801 , H01L2224/81898 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1205 , H01L2924/1306 , H01L2924/14 , H01L2924/1451 , H01L2924/19041 , H01L2924/30107 , H01L2924/35121 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.
摘要翻译： 在层叠多个半导体芯片的半导体装置中，不会降低生产率而提高性能。 半导体器件具有多个元件，层间绝缘膜，焊盘和与依次形成在硅基板的主表面上的焊盘电连接的凸块电极，并且具有形成在硅衬底的背面上的背面电极 硅基板并与凸块电极电连接。 凸块电极具有贯穿焊盘并朝向硅衬底侧突出的突出部分。 背面电极形成为从硅衬底的背面侧朝向主面侧到达突起电极的突出部，并覆盖未到达的背面电极孔部的内部 垫，使得背面电极与凸块电极电连接。
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公开(公告)号：US20090309218A1
公开(公告)日：2009-12-17
申请号：US12483751
申请日：2009-06-12
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05025 , H01L2224/05144 , H01L2224/05155 , H01L2224/05553 , H01L2224/0557 , H01L2224/05572 , H01L2224/1134 , H01L2224/13025 , H01L2224/13099 , H01L2224/81136 , H01L2224/81801 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12044 , H01L2924/14 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2224/05552
摘要： When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled.
摘要翻译： 当在芯片的后表面上形成通孔电极和后表面线时，由于作为通孔的一部分的后表面布线板，在芯片的后表面上形成凸部， 孔电极和后表面电线。 这导致当芯片被吸入时的空气泄漏，因此发生芯片的吸力的降低。 预先在形成背面布线衬垫和背面导线的区域中形成凹部。 后表面布线板和后表面布线设置在凹部内。 因此，通过由背面布线衬垫和后表面线的厚度引起的凸部来确保芯片的后表面的平坦度，使得当处理芯片时不会发生吸力的降低 。
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公开(公告)号：US20110280637A1
公开(公告)日：2011-11-17
申请号：US13104116
申请日：2011-05-10
IPC分类号： G03G21/00
CPC分类号： G03G21/0035 , G03G21/0094
摘要： A cleaning device comprises: a rotational brush disposed to touch an image holder and a lubricant, the brush which scrapes the lubricant and applies the scraped lubricant to the image holder, the brush including: a rotational axis; and a plurality of looped bristles disposed around the rotational axis, wherein a contact length of the bristles to the lubricant is longer than a contact length of the bristles to the image holder.
摘要翻译： 清洁装置包括：旋转刷，其设置成接触图像保持器和润滑剂，刷子刮擦润滑剂并将刮擦的润滑剂施加到图像保持器，刷子包括：旋转轴线; 以及设置在所述旋转轴线周围的多个环状刷毛，其中所述刷毛对所述润滑剂的接触长度比所述刷毛与所述图像保持器的接触长度更长。
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公开(公告)号：US20120141178A1
公开(公告)日：2012-06-07
申请号：US13303373
申请日：2011-11-23
IPC分类号： G03G21/00
CPC分类号： G03G21/0094
摘要： A lubricant supplying device that supplies a lubricant to the surface of an image carrier has a cloud generating section that generates a cloud in which particles of the lubricant are mixed with air and a conveying section that classifies the particles of the lubricant present in the cloud generated by the cloud generating section into small particles with sizes smaller than a prescribed size and large particles with sizes larger than or equal to the prescribed size, and conveys the classified small particles toward the image carrier, and has a lubricant supplying member that holds a lubricant, a contacting member that contacts the lubricant supplying member and causes the lubricant carried by the lubricant supplying member to fly off in the direction of the image carrier, and a leveling member that contacts the image carrier and levels the adhered lubricant.
摘要翻译： 向图像载体的表面供给润滑剂的润滑剂供给装置具有云产生部，其产生将空气中的润滑剂粒子与空气混合的云，以及对存在于云中的润滑剂的粒子进行分类的输送部 通过云产生部分形成尺寸小于规定尺寸的小颗粒和尺寸大于或等于规定尺寸的大颗粒，并将分类的小颗粒输送到图像载体，并且具有保持润滑剂的润滑剂供给构件 与所述润滑剂供给部件接触并使由所述润滑剂供给部件所携带的润滑剂沿着所述图像载体的方向飞行的接触部件，以及与所述图像载体接触并使所述附着的润滑剂平坦化的调平部件。
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