公开(公告)号：US07790267B2

公开(公告)日：2010-09-07

申请号：US11795388

申请日：2006-01-30

申请人： Yasuhito Kinpara ,  Makoto Iida

发明人： Yasuhito Kinpara ,  Makoto Iida

IPC分类号： B32B15/00

CPC分类号： H05K3/0047 ,  H05K2201/0133 ,  H05K2201/0209 ,  H05K2203/0214 ,  Y10T428/24917 ,  Y10T428/249951 ,  Y10T428/249953 ,  Y10T428/31938

摘要： A workpiece boring/cutting operation aiding plate material comprising a rubber-containing styrene resin composition and an inorganic filler, wherein these are compounded in a weight ratio of 80:20 to 40:60; and a molding making use of the same.

摘要翻译： 一种包含含橡胶的苯乙烯树脂组合物和无机填料的工件镗/切割操作辅助板材料，其中以80:20至40:60的重量比混合; 和使用其的模制品。

公开(公告)号：US20080124564A1

公开(公告)日：2008-05-29

申请号：US11795388

申请日：2006-01-30

申请人： Yasuhito Kinpara ,  Makoto Iida

发明人： Yasuhito Kinpara ,  Makoto Iida

IPC分类号： B32B27/28

CPC分类号： H05K3/0047 ,  H05K2201/0133 ,  H05K2201/0209 ,  H05K2203/0214 ,  Y10T428/24917 ,  Y10T428/249951 ,  Y10T428/249953 ,  Y10T428/31938

摘要： A workpiece boring/cutting operation aiding plate material comprising a rubber-containing styrene resin composition and an inorganic filler, wherein these are compounded in a weight ratio of 80:20 to 40:60; and a molding making use of the same.

摘要翻译： 一种包含含橡胶的苯乙烯树脂组合物和无机填料的工件镗/切割操作辅助板材料，其中以80:20至40:60的重量比混合; 和使用其的模制品。

公开(公告)号：US08308864B2

公开(公告)日：2012-11-13

申请号：US13143859

申请日：2009-11-27

申请人： Makoto Iida ,  Kazuo Matsuzawa

发明人： Makoto Iida ,  Kazuo Matsuzawa

IPC分类号： C30B15/00

CPC分类号： C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of pulling the single crystal having a large diameter, in manufacture of the single crystal.

摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造方法，其至少包括以下步骤：通过加热熔融坩埚中的结晶原料来制造熔体; 通过将熔体保持在高温下使熔体成熟; 在将晶种浸入成熟熔体中之后生长单晶，其中加热器和坩埚在成熟步骤中相对上下移动。 结果，提供了能够有效地抑制位错产生的单晶制造方法，以及以高产率制造的高品质单晶，特别是在将具有大直径的单晶拉出的情况下， 制造单晶。

公开(公告)号：US20100031869A1

公开(公告)日：2010-02-11

申请号：US12308122

申请日：2007-05-28

申请人： Makoto Iida ,  Nobuaki Mitamura ,  Takahiro Yanagimachi

发明人： Makoto Iida ,  Nobuaki Mitamura ,  Takahiro Yanagimachi

IPC分类号： C30B15/20

CPC分类号： C30B15/203 ,  C30B29/06 ,  C30B35/00

摘要： The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.

摘要翻译： 本发明提供了一种制造硅单晶的系统，其设计了将F / G的值控制在规定范围内的制造条件，以使由使用 CZ方法属于目标标准，至少包括：1，从上一批硅晶单晶的晶体质量结果出发，初步设计后续批次中硅单晶的制造条件; 装置2根据后续批次中的牵引装置的构成部件从F和/或G的变化量计算校正量; 意味着3根据后续批次中的制造过程从F和/或G的变化量计算校正量; 以及通过装置1将装置2和/或装置3的校正量加到制造条件的装置4，以计算后续批次中的制造条件。 结果，可以提供一种制造硅单晶的系统，其可以更可靠地获得具有期望的晶体质量的硅单晶并且提高生产率或产率，以及使用该系统制造单晶硅的方法。

公开(公告)号：US06445872B1

公开(公告)日：2002-09-03

申请号：US09194232

申请日：1998-11-23

申请人： Nobuya Sano ,  Makoto Iida

发明人： Nobuya Sano ,  Makoto Iida

IPC分类号： H04N591

CPC分类号： H04N21/4147 ,  G11B20/10 ,  H04N5/4401 ,  H04N5/775 ,  H04N9/8042 ,  H04N9/8227 ,  H04N21/4263 ,  H04N21/4325 ,  H04N21/4334 ,  H04N21/4583 ,  H04N21/47214 ,  H04N21/4882

摘要： A bit stream which is a data string including coded data of a multiplicity of channels is output from a tuner section 22, and a recording channel selection section 23 selects coded data of a desired channel from the bit stream and output by configuring the data string. The data string output from the recording channel selection section 23 is recorded to and reproduced from a magnetic tape of a recording and reproducing section 24 by a rotary head. The coded data of the data string reproduced from the recording and reproducing section 24 is discompression-encoded by an MPEG2 decoder 25 and a video signal is output.

摘要翻译： 作为包含多个通道的编码数据的数据串的比特流是从调谐器部分22输出的，记录频道选择部分23从位流中选择所需频道的编码数据并通过配置数据串来输出。 从记录通道选择部分23输出的数据串通过旋转磁头记录到记录和再现部分24的磁带并从其再现。 从记录和再现部分24再现的数据串的编码数据由MPEG2解码器25进行解压缩编码，并输出视频信号。

公开(公告)号：US06191009B1

公开(公告)日：2001-02-20

申请号：US09264514

申请日：1999-03-08

申请人： Masaro Tamatsuka ,  Makoto Iida ,  Norihiro Kobayashi

发明人： Masaro Tamatsuka ,  Makoto Iida ,  Norihiro Kobayashi

IPC分类号： H01L21322

CPC分类号： C30B15/00 ,  C30B29/06 ,  C30B33/02

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal ingot in which nitrogen is doped is grown by a Czochralski method, sliced to provide a silicon single crystal wafer, and then subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer. According to a further method, a silicon single crystal ingot is grown in which nitrogen is doped by a Czochralski method, with controlling nitrogen concentration, oxygen concentration and cooling rate, and then the silicon single crystal ingot is sliced to provide a wafer. A silicon single crystal wafer is obtained by slicing a silicon single crystal ingot grown by a Czochralski method with doping nitrogen, wherein the depth of a denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 &mgr;m, and the bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1×108 to 2×1010 number/cm3. A CZ silicon wafer is provided, wherein generation of crystal defects on the surface of the wafer, and oxygen precipitation, is accelerated in the bulk portion of the wafer. The controllable range of the depth of the denuded zone and the bulk micro-defect density can be enlarged.

摘要翻译： 在制造硅单晶晶片的方法中，通过切克拉斯基法生长氮掺杂的硅单晶锭，切片以提供硅单晶晶片，然后对其进行热扩散氮 晶片表面。 根据另外的方法，通过切克拉斯基法，通过控制氮浓度，氧浓度和冷却速度，生长氮掺杂的硅单晶锭，然后将硅单晶锭切片以提供晶片。 通过用掺杂氮气切片通过切克劳斯基法生长的硅单晶锭获得硅单晶晶片，其中吸杂热处理或器件制造热处理后的裸露区的深度为2〜12μm， 吸气热处理或器件制造热处理后的缺陷密度为1×10 8〜2×10 10个/ cm 3。 提供了一种CZ硅晶片，其中晶片表面上的晶体缺陷的产生和氧沉淀在晶片的主体部分被加速。 可以扩大裸露区域的深度的可控范围和体积微缺陷密度。

公开(公告)号：US6159438A

公开(公告)日：2000-12-12

申请号：US359078

申请日：1999-07-22

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C01B33/26

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US6053975A

公开(公告)日：2000-04-25

申请号：US39830

申请日：1998-03-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10T117/1072

摘要： In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.

摘要翻译： 在晶体保持装置中，晶种与单晶的直圆柱形部分之间的波纹状部分通过在晶体与材料熔体接触的单晶生长过程中保持提升夹具的部分来保持，随后 在旋转时拉动。 在晶体保持装置中，在提升夹具的每个保持部分的末端安装有用于与晶体的波纹部分建立表面接触的附接构件。 因此，可以可靠地保持单晶，从而可以防止在牵引操作期间单晶的断裂和下降。

公开(公告)号：US5968264A

公开(公告)日：1999-10-19

申请号：US109530

申请日：1998-07-02

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US5948164A

公开(公告)日：1999-09-07

申请号：US140288

申请日：1998-08-25

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/32 ,  C30B29/06 ,  D04H1/4209 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/32 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1072

摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

摘要翻译： 用于根据切克劳斯基方法操作的晶体拉制装置中的晶种保持架。 在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切口表面与保持器的插入物的接触表面之间设置耐热缓冲材料。 耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。