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公开(公告)号：US08497492B2
公开(公告)日：2013-07-30
申请号：US12298818
申请日：2007-02-23
IPC分类号： H01L47/00
CPC分类号： H01L45/1253 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1633 , H01L45/1691
摘要： A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.
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公开(公告)号：US08115586B2
公开(公告)日：2012-02-14
申请号：US12298089
申请日：2007-02-16
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/124 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1633 , H01L45/1691 , Y10T29/49082
摘要： Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.
摘要翻译： 提供了一种可变电阻元件，其具有可变电阻体中的电赋值区域小于由上电极或下电极限定的面积的构造，以及制造可变电阻元件的方法。 在将电压脉冲施加到两个电极之间时，通过可变电阻体在两个电极之间流过电流的电流路径的横截面形成为比任何电极的线宽窄的线宽 并且小于关于制造工艺的最小工作尺寸，使得其面积可以比现有技术的可变电阻元件中的电赋值区的面积小。
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公开(公告)号：US20090200640A1
公开(公告)日：2009-08-13
申请号：US12298818
申请日：2007-02-23
IPC分类号： H01L29/8605 , H01L21/02 , H01L45/00
CPC分类号： H01L45/1253 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1633 , H01L45/1691
摘要： A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.
摘要翻译： 提供一种可变电阻元件，其包括可变电阻体的电赋能区的面积比由上电极或下电极约束的面积更小的构造及其制造方法。 凸起电极材料形成在布置在基底基板上的下电极上。 突起电极材料在与下电极的接触面不同的表面与可变电阻体接触。 可变电阻体与不同于凸块电极材料的接触表面的表面与上电极接触。 因此，凸起电极材料（可变电阻体）与上部电极之间的交叉点区域成为可变电阻体的电性区域，与现有的变量区域相比，能够减小面积 电阻元件。
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公开(公告)号：US20090096568A1
公开(公告)日：2009-04-16
申请号：US12298089
申请日：2007-02-16
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/124 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1633 , H01L45/1691 , Y10T29/49082
摘要： Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.
摘要翻译： 提供了一种可变电阻元件，其具有可变电阻体中的电赋值区域小于由上电极或下电极限定的面积的构造，以及制造可变电阻元件的方法。 在将电压脉冲施加到两个电极之间时，通过可变电阻体在两个电极之间流过电流的电流路径的横截面形成为比任何电极的线宽窄的线宽 并且小于关于制造工艺的最小工作尺寸，使得其面积可以比现有技术的可变电阻元件中的电赋值区的面积小。
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公开(公告)号：US20060154417A1
公开(公告)日：2006-07-13
申请号：US11330806
申请日：2006-01-11
申请人： Naoyuki Shinmura , Shigeo Ohnishi , Tetsuya Ohnishi , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri
发明人： Naoyuki Shinmura , Shigeo Ohnishi , Tetsuya Ohnishi , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri
IPC分类号： H01L21/8242
CPC分类号： H01L45/1675 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1641
摘要： The present invention is directed towards a method of manufacturing a semiconductor memory device arranged of a cross point memory array having memory elements provided between upper and lower electrodes for storage of data. The present invention comprises a lower electrode lines forming step of planarizing each of the lower electrode lines and insulating layers provided on both sides of the lower electrode line so as to be substantially uniform in the height thus for patterning the lower electrode lines, a memory element layer depositing step of depositing on the lower electrode lines a memory element layer for the memory elements, and an annealing step of annealing with heat treatment either between the lower electrode lines forming step and the memory element layer depositing step or after the memory element layer depositing step so that any damages caused by the polishing of the surface of the lower electrode lines can be eliminated.
摘要翻译： 本发明涉及一种制造半导体存储器件的方法，该半导体存储器件被布置成具有设置在上部和下部电极之间的存储元件的交叉点存储器阵列，用于存储数据。 本发明包括下电极线，其形成步骤：将设置在下电极线两侧的每个下电极线和绝缘层平坦化，以使其高度大致均匀，从而构图下电极线;存储元件 在下电极线上沉积用于存储元件的存储元件层的层沉积步骤，以及在下电极线形成步骤和存储元件层沉积步骤之间或在存储元件层沉积之后进行热处理退火的退火步骤 使得可以消除由下电极线的表面的抛光引起的任何损坏。
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公开(公告)号：US20110089395A1
公开(公告)日：2011-04-21
申请号：US12976113
申请日：2010-12-22
申请人： Tetsuya OHNISHI , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
发明人： Tetsuya OHNISHI , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/77 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.
摘要翻译： 具有交叉点结构的半导体存储器件包括沿一个方向延伸的多个上电极和布置成沿与上电极的一个方向成直角的另一方向延伸的多个下电极。 记录材料设置在上电极和下电极之间用于存储数据。 记忆材料由钙钛矿材料制成，并且布置在沿着相应的上电极延伸的相应上电极的下电极侧。
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公开(公告)号：US20060102943A1
公开(公告)日：2006-05-18
申请号：US11274258
申请日：2005-11-16
申请人： Tetsuya Ohnishi , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
发明人： Tetsuya Ohnishi , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
IPC分类号： H01L29/94
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/77 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.
摘要翻译： 具有交叉点结构的半导体存储器件包括沿一个方向延伸的多个上电极和布置成沿与上电极的一个方向成直角的另一方向延伸的多个下电极。 记录材料设置在上电极和下电极之间用于存储数据。 记忆材料由钙钛矿材料制成，并且布置在沿着相应的上电极延伸的相应上电极的下电极侧。
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公开(公告)号：US08030695B2
公开(公告)日：2011-10-04
申请号：US12976113
申请日：2010-12-22
申请人： Tetsuya Ohnishi , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
发明人： Tetsuya Ohnishi , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
IPC分类号： H01L21/02
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/77 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.
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公开(公告)号：US07879626B2
公开(公告)日：2011-02-01
申请号：US11274258
申请日：2005-11-16
申请人： Tetsuya Ohnishi , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
发明人： Tetsuya Ohnishi , Naoyuki Shinmura , Shinobu Yamazaki , Takahiro Shibuya , Takashi Nakano , Masayuki Tajiri , Shigeo Ohnishi
IPC分类号： H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/77 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.
摘要翻译： 具有交叉点结构的半导体存储器件包括沿一个方向延伸的多个上电极和布置成沿与上电极的一个方向成直角的另一方向延伸的多个下电极。 记录材料设置在上电极和下电极之间用于存储数据。 记忆材料由钙钛矿材料制成，并且布置在沿着相应的上电极延伸的相应上电极的下电极侧。
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公开(公告)号：US08770825B2
公开(公告)日：2014-07-08
申请号：US12733980
申请日：2008-09-10
IPC分类号： B01F7/04
CPC分类号： B01F7/042 , B01F3/1221 , B01F7/003 , B01F7/00425 , B01F7/022
摘要： A kneading apparatus has a pair of rotary shafts mounted to undergo rotation in different directions of rotation and at different rotational speeds from one another. Stirring members are helically arranged on outer peripheries of the rotary shafts at predetermined helical and angular pitches for kneading an object during rotation of the rotary shafts. The helical pitch of the stirring members of one of the rotary shafts has an inverse helix from that of the stirring members of the other rotary shaft. The stirring members have surfaces with a first phase configured to move the kneaded object in a feed direction or a second phase symmetrical to the first phase and configured to move the kneaded object in a direction reverse to the feed direction. The stirring members are arranged so that the first and second phases cyclically repeat in a predetermined sequence in axial directions of the rotary shafts.
摘要翻译： 捏合装置具有一对旋转轴，其安装成在不同的旋转方向和不同的转速下进行旋转。 旋转构件螺旋地布置在旋转轴的外周上，以预定的螺旋和角度间距在旋转轴旋转期间捏合物体。 其中一个旋转轴的搅拌构件的螺旋螺距与另一个旋转轴的搅拌构件的螺旋螺距相反。 搅拌构件具有表面，其具有第一相，其构造成使得捏合物沿进给方向或与第一相对称的第二相移动并且构造成使得捏合物沿与进给方向相反的方向移动。 搅拌构件被布置成使得第一和第二相在旋转轴的轴向方向上以预定顺序循环重复。
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