摘要:
The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要:
The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要:
The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要:
The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要:
It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
摘要:
The present invention provides a thermoelectric conversion element that has high efficiency even at reduced thickness. In this thermoelectric conversion element, striped p-type thermoelectric conversion parts are arranged on one surface of an insulating layer, and striped n-type thermoelectric conversion parts are arranged on the other surface. The two sets of stripes form overlapped portions. At one or more of the overlapped portions, a first p-type thermoelectric conversion part and a first n-type thermoelectric conversion part are electrically connected via a first conducting portion arranged within the insulating layer, a second p-type thermoelectric conversion part and a second n-type thermoelectric conversion part are electrically connected via a second conducting portion arranged within the insulating layer, and the first conducting portion and the second conducting portion are electrically isolated. The element of the present invention provides two junctions in a region where a conventional element would provide only one junction.
摘要:
The present invention provides a thermoelectric conversion element that has high efficiency even at reduced thickness. In this thermoelectric conversion element, striped p-type thermoelectric conversion parts are arranged on one surface of an insulating layer, and striped n-type thermoelectric conversion parts are arranged on the other surface. The two sets of stripes form overlapped portions. At one or more of the overlapped portions, a first p-type thermoelectric conversion part and a first n-type thermoelectric conversion part are electrically connected via a first conducting portion arranged within the insulating layer, a second p-type thermoelectric conversion part and a second n-type thermoelectric conversion part are electrically connected via a second conducting portion arranged within the insulating layer, and the first conducting portion and the second conducting portion are electrically isolated. The element of the present invention provides two junctions in a region where a conventional element would provide only one junction.
摘要:
It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
摘要:
An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes: a multilayer structure including an upper electrode, a lower electrode, and an electro-resistance layer sandwiched by the electrodes, the multilayer structure disposed on a substrate; wherein the electro-resistance layer has a spinel structure, and a surface of the lower electrode that faces the electro-resistance layer is oxidized. The electro-resistance element can be manufactured by a manufacturing process at 400° C. or lower.
摘要:
With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from −1 to 1.
摘要翻译:使用传统的热电转换材料,其热电转换性能不足,并且在氧化气氛和空气气氛中的问题是达到稳定的性能。 鉴于此,根据本发明,热电材料由具有氧化钒作为其主要成分的复合氧化物制成,并且由通式A x X x X + 1.5 + d SUB>。 这里,A为选自碱金属元素,碱土金属元素和稀土元素中的至少一种,x为0.2〜2的数值,d为氧的非化学计量比 是-1〜1范围内的数值。