摘要:
A ceramic substrate and a metallic layer formed thereon are bonded closely by means of a bonding layer formed between the ceramic substrate and the metallic layer. The ceramic substrate comprises either alumina or a ceramic containing alumina, and the metallic layer comprises either molybdenum (Mo) or an alloy composed of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb). The bonding layer comprises composite oxides of aluminum and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) and formed by either a process of (1) forming an intermediate layer comprising at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) between the ceramic substrate and the metallic layer, and subjecting the laminated substance to a heat treatment to a cause a reaction between alumina and the intermediate layer; or (2) forming an alloy layer comprising an alloy of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) directly on the ceramic substrate, and subjecting the laminated substance to a heat treatment to cause a reaction between alumina and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) contained in the alloy layer.
摘要:
A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.
摘要:
A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.
摘要:
A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.
摘要:
A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.
摘要:
The invention provides electroluminescent (EL) elements, such that a red EL light source, a green EL light source and a blue EL light source emit red color light, green color light, and blue color light, respectively, and are disposed at the rear of liquid crystal display elements. Each EL light source includes an organic EL element in which an organic thin film emits light. Each EL light source has a structure in which an organic luminescent layer is sandwiched between an indium tin oxide (ITO) electrode and a metal electrode which have striped patterns which are orthogonal to each other, and sections (luminescent sections) at which the striped patterns of the ITO electrode and the metal electrode intersect with each other emit light. The luminescent sections are arrayed two-dimensionally on a glass substrate and illuminate the entire display area of the liquid crystal display element.
摘要:
This invention has an objective to improve durability at elevated temperature in organic electroluminescent devices using coumarin derivatives as dopant in a luminescent layer. This invention attains the above objective by providing in the organic electroluminescent devices formed by laminating an anode, a hole injection layer, a hole transportation layer, a luminescent layer, an electron transportation layer and a cathode in this order, the luminescent layer which comprises as dopant the green light-emitting coumarin derivative and hole- and electron-transporting substances as host; said coumarin derivative consisting of a plurality of coumarin groups bound to an aromatic ring, heterocycle, or any combination thereof, and exhibiting a glass transition point of 150° C. or higher or a melting point of 297° C. or higher.
摘要:
An optical resonator type organic electroluminescent element has a multilayered film mirror 30, a transparent electrode 12, an electron hole transportation layer 14 and a luminescent layer 16 configuring an organic layer, and a metallic electrode mirror 20, formed on a glass substrate 10. The optical resonator type organic electroluminescent element amplifies a specific wavelength (especially, in a range of about 30 nm toward a shorter wavelength side from a luminescence peak wavelength of the organic layer) in luminescence light by a minute optical resonator, which comprises the multilayered film mirror 30 and the metallic electrode mirror 20. It is determined that the minute optical resonator has an optical length L which is twice as long as a resonance wavelength, the organic layer has a thickness of 100 nm or more, and the transparent electrode has a thickness of 50 nm or more or a thickness so to have a sheet resistance of 30 &OHgr;/□ or less. Thus, the transparent electrode can be prevented from generating heat even when a large current is caused to flow into it, and the element characteristics can be reliably prevented from being deteriorated. Moreover, the reliability of this element can be improved because the organic layer containing the luminescent layer has a sufficient thickness.
摘要:
In order to fabricate an organic electroluminescent device with good thermal stability and such high durability that its light emission efficiency is retained over a predetermined level for a long time, an anode is formed on a substrate, one or more organic-inorganic compound layers are formed on the anode, and a cathode is formed on the organic compound layers, sequentially. At least one of the organic compound layers comprises a mixed thin film composed of an organic compound dispersed uniformly in an inorganic compound, or a superlattice structure made of an organic compound and an inorganic compound for preventing the thermal degradation of a fluorescent organic compound constituting an emission layer.
摘要:
A liquid crystal device having a higher durability and a display quality less likely to be degraded, for example, for use in a glare shield reflection mirror. The liquid crystal device comprises: a pair of substrate plates, a liquid crystal layer filled between the pair of substrate plates, and an oblique evaporation film laminated on one of the substrate plates, wherein a protective layer is formed on the boundary surface between the oblique evaporation film and a neighboring component member. The oblique evaporation film has become less susceptible to the neighboring material, and problems, such a bluish oblique evaporation film due to the proton (H.sup.+) intrusion from the neighboring material, have been prevented. Thus the liquid crystal device has come to have a higher durability and a display quality less likely to be degraded.