摘要:
Disclosed is an etching method and an apparatus for performing an etching by alternately and repeatedly switching an average thickness of an ion sheath and an average energy of etching ions between two different values. Since the etchant absorption to the surface of an article to be etched and the etching by ions are effectively performed, it is possible to reduce the influence of an aspect ratio on an etching depth, and hence to perform the etching with an equal depth even if the width of the opening is changed.
摘要:
The amount of dust particles deposited on a semiconductor wafer during plasma etching or CVD in manufacturing a semiconductor integrated circuit is decreased by second plasma generating electrode 28 disposed around a lower electrode 15 in a plasma etching chamber 4a. High frequency voltage is applied to the second plasma generating electrode 18 just before the stop of plasma discharge to form a sub-plasma of high density along the outer periphery of the lower electrode 15, there is formed a sub-potential distribution acting to push out negatively charged dust particles stagnating near the main surface of a semiconductor substrate 7 toward the outer periphery of the wafer. The negatively charged dust particles thus pushed out from the vicinity of the main surface of the wafer 7 are moved to the second plasma generating electrode 28 and exhausted by a vacuum pump through an exhaust port 25.
摘要:
A chamber 103 for introducing hydrogen without causing serious damage to a semiconductor wafer and a chamber 104 for eliminating the hydrogen introduced into the semiconductor wafer at relatively low temperature are installed at the succeeding stage of a plasma etching unit for effectively correcting the damage caused by plasma etching and ion implantation to a semiconductor substrate or an ion implanting unit. In order to introduce hydrogen into the semiconductor wafer without serious damage, a mixture of hydrocarbon gas and oxygen gas for accelerating the decomposition of the hydrocarbon gas is used for forming hydrogen radicals in a plasma and the hydrogen radicals are supplied to the semiconductor wafer at room temperature by a downstream system. The semiconductor wafer is heat-treated in an atmosphere of a vacuum or inactive gas in a temperature region of 200.degree.-500.degree. C. to eliminate the hydrogen introduced into the semiconductor wafer.
摘要:
Disclosed is a display device in which reliable bonding strength and high reparability are compatible when a panel-like member is bonded to a display panel.The display device comprises: a display panel; and a panel-like member bonded to the display panel with an adhesive made of an ultraviolet curable resin; wherein the adhesive includes a first adhesive portion and a second adhesive portion, the first adhesive portion being provided outside of a display area of the display panel and formed in a circular shape to surround the display area, the second adhesive portion prevailing in an area surrounded by the first adhesive portion, the first adhesive portion being different in a modulus of elasticity from the second adhesive portion, and wherein the modulus of elasticity of the second adhesive portion is smaller than the modulus of elasticity of the first adhesive portion.
摘要:
A liquid crystal display panel including liquid crystal sandwiched between a pair of substrates is prepared. A light-transmitting reinforcing plate is prepared. A photocuring resin is provided between the liquid crystal display panel and the reinforcing plate. Light is irradiated to a side surface of a laminated body constituted of the liquid crystal display panel, the reinforcing plate and the photocuring resin. The photocuring resin is arranged to face the liquid crystal in an opposed manner. The light is allowed to advance to the inside of the photocuring resin from an edge portion of the photocuring resin. The light is allowed to advance to the inside of the reinforcing plate from an edge portion of the reinforcing plate, is propagated in the inside of the reinforcing plate, and is irradiated to the photocuring resin from the reinforcing plate at a position away from the edge portion of the reinforcing plate.
摘要:
A liquid crystal display panel including liquid crystal sandwiched between a pair of substrates is prepared. A light-transmitting reinforcing plate is prepared. A photocuring resin is provided between the liquid crystal display panel and the reinforcing plate. Light is irradiated to a side surface of a laminated body constituted of the liquid crystal display panel, the reinforcing plate and the photocuring resin. The photocuring resin is arranged to face the liquid crystal in an opposed manner. The light is allowed to advance to the inside of the photocuring resin from an edge portion of the photocuring resin. The light is allowed to advance to the inside of the reinforcing plate from an edge portion of the reinforcing plate, is propagated in the inside of the reinforcing plate, and is irradiated to the photocuring resin from the reinforcing plate at a position away from the edge portion of the reinforcing plate.
摘要:
Disclosed is a display device in which reliable bonding strength and high reparability are compatible when a panel-like member is bonded to a display panel.The display device comprises: a display panel; and a panel-like member bonded to the display panel with an adhesive made of an ultraviolet curable resin; wherein the adhesive includes a first adhesive portion and a second adhesive portion, the first adhesive portion being provided outside of a display area of the display panel and formed in a circular shape to surround the display area, the second adhesive portion prevailing in an area surrounded by the first adhesive portion, the first adhesive portion being different in a modulus of elasticity from the second adhesive portion, and wherein the modulus of elasticity of the second adhesive portion is smaller than the modulus of elasticity of the first adhesive portion.