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58 条记录 (耗时 0.049 秒)

    Polishing method and polishing apparatus
    1.
    发明授权
    Polishing method and polishing apparatus 失效
    抛光方法和抛光装置

    公开(公告)号：US5607718A

    公开(公告)日：1997-03-04

    申请号：US300127

    申请日：1994-09-02

    申请人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

    发明人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

    IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B57/02 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  B05D5/12 ,  C03C15/00 ,  H01L21/465

    CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/3213 ,  H01L21/7684

    摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.

    摘要翻译： 本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面 通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。 本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管， 抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度 代理商

    Polishing method and polishing apparatus
    2.
    发明授权
    Polishing method and polishing apparatus 失效
    抛光方法和抛光装置

    公开(公告)号：US5775980A

    公开(公告)日：1998-07-07

    申请号：US743044

    申请日：1996-11-04

    申请人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

    发明人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

    IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B57/02 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  B24B5/00

    CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/3213 ,  H01L21/7684

    摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.

    摘要翻译： 本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面 通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。 本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管， 抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度 代理商

    Semiconductor device having a single-crystal metal wiring
    3.
    发明授权
    Semiconductor device having a single-crystal metal wiring 失效
    具有单晶金属布线的半导体器件

    公开(公告)号：US5661345A

    公开(公告)日：1997-08-26

    申请号：US353214

    申请日：1994-12-01

    申请人： Junichi Wada ,  Hisashi Kaneko ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano

    发明人： Junichi Wada ,  Hisashi Kaneko ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano

    IPC分类号： H01L21/3205 ,  H01L21/285 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/48

    CPC分类号： H01L23/53223 ,  H01L21/28512 ,  H01L21/76882 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002

    摘要： The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.

    摘要翻译： 制造半导体器件的方法包括以下步骤：在衬底的表面上形成具有预定图案形状的沟槽; 在与基板的表面反应的同时，在基板上形成金属膜; 并且通过原位退火使金属膜凝聚，其中金属膜在金属膜由于退火而与基板的表面反应之前开始凝聚，同时在金属膜上形成天然氧化物被抑制， 通过在预定温度下退火预定时间将金属膜填充到槽中。 半导体器件的结构包括绝缘体，其中形成有预定图案形状的沟槽部分和由填充在沟槽部分中的单晶金属制成的电极互连。

    Method for making aluminum single crystal interconnections on insulators
    4.
    发明授权
    Method for making aluminum single crystal interconnections on insulators 失效
    在绝缘子上制作铝单晶互连的方法

    公开(公告)号：US5409862A

    公开(公告)日：1995-04-25

    申请号：US035208

    申请日：1993-03-22

    申请人： Junichi Wada ,  Hisashi Kaneko ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano

    发明人： Junichi Wada ,  Hisashi Kaneko ,  Kyoichi Suguro ,  Nobuo Hayasaka ,  Haruo Okano

    IPC分类号： H01L21/3205 ,  H01L21/285 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/44

    CPC分类号： H01L23/53223 ,  H01L21/28512 ,  H01L21/76882 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002

    摘要： The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.

    摘要翻译： 制造半导体器件的方法包括以下步骤：在衬底的表面上形成具有预定图案形状的沟槽; 在与基板的表面反应的同时，在基板上形成金属膜; 并且通过原位退火使金属膜凝聚，其中金属膜在金属膜由于退火而与基板的表面反应之前开始凝聚，同时在金属膜上形成天然氧化物被抑制， 通过在预定温度下退火预定时间将金属膜填充到槽中。 半导体器件的结构包括绝缘体，其中形成有预定图案形状的沟槽部分和由填充在沟槽部分中的单晶金属制成的电极互连。

    Method for production of semiconductor device
    5.
    发明授权
    Method for production of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US06306756B1

    公开(公告)日：2001-10-23

    申请号：US09580922

    申请日：2000-05-26

    申请人： Masahiko Hasunuma ,  Sachiyo Ito ,  Keizo Shimamura ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Junsei Tsutsumi ,  Akihiro Kajita ,  Junichi Wada ,  Haruo Okano

    发明人： Masahiko Hasunuma ,  Sachiyo Ito ,  Keizo Shimamura ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Junsei Tsutsumi ,  Akihiro Kajita ,  Junichi Wada ,  Haruo Okano

    IPC分类号： H01L214763

    CPC分类号： H01L21/76882

    摘要： A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches. The formation of the interconnection is also accomplished by forming a conductive film on the surface of a semiconducting substrate having trenches formed therein, exerting thereon uniaxial stress from above the semiconducting substrate, heat treating the formed conductive film thereby flowing the conductive film, to fill the trenches, and polishing the surface of the semiconducting substrate.

    摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有形成在半导体衬底中的电极线，其包括制备半导体衬底，该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔，形成导电膜 主要是在半导体基板的表面上选自Cu，Ag和Au中的至少一个元件，在至少供给氧化气体的同时对叠加的Cu膜进行热处理，从而使Cu膜流动，从而不会熔化以填充 沟槽和/或接触孔，并且通过抛光导电膜的掉落在电极线的区域外部并且完成电极线的部分去除。 在热处理期间，除了氧化气体之外还提供还原气体以引起局部氧化还原反应，并使导电膜流通和/或流动，从而完成沟槽中导电膜的实施例。 互连的形成还可以通过在其上形成有沟槽的半导体衬底的表面上形成导电膜，在半导体衬底上方施加单轴应力，热处理形成的导电膜从而使导电膜流动，从而填充 沟槽，并抛光半导体衬底的表面。

    Method for production of semiconductor device
    6.
    发明授权
    Method for production of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US6090701A

    公开(公告)日：2000-07-18

    申请号：US521088

    申请日：1995-06-20

    申请人： Masahiko Hasunuma ,  Sachiyo Ito ,  Keizo Shimamura ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Junsei Tsutsumi ,  Akihiro Kajita ,  Junichi Wada ,  Haruo Okano

    发明人： Masahiko Hasunuma ,  Sachiyo Ito ,  Keizo Shimamura ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Junsei Tsutsumi ,  Akihiro Kajita ,  Junichi Wada ,  Haruo Okano

    IPC分类号： H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76882

    摘要： A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.

    摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有形成在半导体衬底中的电极线，其包括制备半导体衬底，该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔，形成导电膜 主要是在半导体基板的表面上选自Cu，Ag和Au中的至少一个元件，在至少供给氧化气体的同时对叠加的Cu膜进行热处理，从而使Cu膜流过以填充沟槽和/或 接触孔，并且通过抛光导电膜的掉在电极线的区域外部并且完成电极线的部分去除。 在热处理期间，除了氧化气体之外还提供还原气体以引起局部氧化还原反应，并使导电膜流通和/或流动，从而完成沟槽中导电膜的实施例。