Methods of forming packaged micro-electromechanical devices
    2.
    发明授权
    Methods of forming packaged micro-electromechanical devices 有权
    形成封装的微机电装置的方法

    公开(公告)号:US07955885B1

    公开(公告)日:2011-06-07

    申请号:US12351020

    申请日:2009-01-09

    IPC分类号: H01L21/00 H01L21/30 H01L21/46

    摘要: Methods of forming packaged micro-electromechanical devices include forming a first substrate having a micro-electromechanical device therein, which extends adjacent a first surface of the first substrate. A first surface of a second substrate is then bonded to the first surface of the first substrate, to thereby encapsulate the micro-electromechanical device within a space provided between the first and second substrates. Subsequent to bonding, a second surface of the second substrate is selectively etched to define at least one through-substrate opening therein, which exposes an electrode of the micro-electromechanical device. Thereafter, the through-substrate opening is filled with an electrically conductive through-substrate via.

    摘要翻译: 形成包装的微机电装置的方法包括在其中形成具有微机电装置的第一基板,其在第一基板的第一表面附近延伸。 然后将第二基板的第一表面接合到第一基板的第一表面,从而将微机电装置封装在设置在第一和第二基板之间的空间内。 在接合之后,选择性地蚀刻第二衬底的第二表面以在其中限定其中暴露微机电器件的电极的至少一个贯穿衬底开口。 此后,贯通基板开口填充有导电贯穿基板通孔。

    Methods of packaging microelectromechanical resonators
    3.
    发明授权
    Methods of packaging microelectromechanical resonators 失效
    包装微机电谐振器的方法

    公开(公告)号:US08426233B1

    公开(公告)日:2013-04-23

    申请号:US13077312

    申请日:2011-03-31

    IPC分类号: H01L21/00

    摘要: Methods of forming packaged microelectromechanical resonators include forming a first isolation trench in a first surface of a capping substrate, with the first isolation trench encircling a first portion of the capping substrate. The first isolation trench is filled with an electrically insulating material. The first surface of the capping substrate is bonded to a device substrate, which includes the microelectromechanical resonator and at least a first electrically conductive line connected to the microelectromechanical resonator. A second surface of the capping substrate is planarized for a sufficient duration to thereby expose the electrically insulating material and the first portion of the capping substrate encircled by the first isolation trench. The exposed first portion of the capping substrate is selectively etched to thereby define a through-substrate opening therein, which exposes a first portion of the first electrically conductive line. At least a portion of the through-substrate opening is filled with an electrically conductive through-substrate via, which is electrically connected to the first portion of the first electrically conductive line.

    摘要翻译: 形成封装的微机电谐振器的方法包括在封盖基板的第一表面中形成第一隔离沟槽,第一隔离沟槽围绕封盖基板的第一部分。 第一隔离槽填充有电绝缘材料。 封盖衬底的第一表面被结合到器件衬底,器件衬底包括微机电谐振器和连接到微机电谐振器的至少第一导电线。 封盖基板的第二表面被平坦化持续足够的时间,从而暴露电绝缘材料和由第一隔离沟槽围绕的封盖基板的第一部分。 选择性地蚀刻封盖衬底的暴露的第一部分,从而在其中限定穿透衬底开口,其暴露第一导电线的第一部分。 贯穿基板开口的至少一部分填充有电连接到第一导电线的第一部分的导电贯穿基板通孔。

    Methods of forming microelectronic packaging substrates having through-substrate vias therein
    5.
    发明授权
    Methods of forming microelectronic packaging substrates having through-substrate vias therein 有权
    形成其中具有贯通基板通孔的微电子封装基板的方法

    公开(公告)号:US07842613B1

    公开(公告)日:2010-11-30

    申请号:US12349677

    申请日:2009-01-07

    申请人: Kuolung Lei

    发明人: Kuolung Lei

    IPC分类号: H01L21/44

    摘要: Methods of forming a substrate for microelectronic packaging may include electroplating a metal seed layer onto a sidewall of a trench extending through the substrate. The sidewall may be patterned to have at least one slot therein that extends through the substrate. This slot is formed to be sufficiently narrow to block plating of the metal seed layer onto sidewalls of the slot. Thereafter, the at least a pair of electrodes are selectively electroplated onto side-by-side portions of the metal seed layer on the sidewall of the trench. During this electroplating step, the slot is used to provide a self-aligned separation between the pair of electrodes.

    摘要翻译: 形成用于微电子封装的衬底的方法可以包括将金属种子层电镀到延伸穿过衬底的沟槽的侧壁上。 侧壁可以被图案化以在其中具有延伸穿过基底的至少一个狭槽。 该槽形成为足够窄以阻挡金属种子层在槽的侧壁上的电镀。 此后,至少一对电极选择性地电镀在沟槽的侧壁上的金属种子层的并排部分上。 在该电镀步骤期间,槽用于在一对电极之间提供自对准的间隔。