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20 条记录 (耗时 0.149 秒)

    Method for forming metallic capacitor
    2.
    发明授权
    Method for forming metallic capacitor 有权
    金属电容器形成方法

    公开(公告)号：US6086951A

    公开(公告)日：2000-07-11

    申请号：US332342

    申请日：1999-06-14

    申请人： Chen-Bin Lin ,  Cheng-Hui Chung ,  Yu-Ju Liu

    发明人： Chen-Bin Lin ,  Cheng-Hui Chung ,  Yu-Ju Liu

    IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8242

    CPC分类号： H01L28/55 ,  H01L28/60 ,  H01L21/76801 ,  H01L21/76838

    摘要： A method of forming metallic capacitor. The method includes forming a lower electrode for forming the capacitor and a metal conductive line over an inter-layer dielectric such that there are gaps between and on the sides of the lower electrode and the metal conductive line. Thereafter, a first oxide layer is formed that fills the gap, and then a second oxide layer is formed over the inter-layer dielectric. The second oxide layer is later patterned to form a cap oxide layer having an opening that exposes a portion of the lower electrode. Subsequently, a thin dielectric layer is formed over the lower electrode and the cap oxide layer. Finally, an upper electrode is formed over the thin dielectric layer filling the opening.

    摘要翻译： 一种形成金属电容器的方法。 该方法包括形成用于形成电容器的下电极和在层间电介质上的金属导电线，使得在下电极和金属导线之间的两侧之间和之间存在间隙。 此后，形成填充间隙的第一氧化物层，然后在层间电介质上形成第二氧化物层。 随后将第二氧化物层图案化以形成具有暴露下部电极的一部分的开口的帽氧化物层。 随后，在下电极和盖氧化物层上形成薄介电层。 最后，在填充开口的薄介电层上形成上电极。

    Process for fabricating mixed signal integrated circuit
    3.
    发明授权
    Process for fabricating mixed signal integrated circuit 有权
    混合信号集成电路的制造工艺

    公开(公告)号：US6033965A

    公开(公告)日：2000-03-07

    申请号：US363074

    申请日：1999-07-28

    申请人： Chen-Bin Lin ,  Feng-Ming Liu ,  James Ho ,  Yu-Ju Liu

    发明人： Chen-Bin Lin ,  Feng-Ming Liu ,  James Ho ,  Yu-Ju Liu

    IPC分类号： H01L27/06 ,  H01L21/20 ,  H01L21/8242

    CPC分类号： H01L27/0629

    摘要： A process for fabricating a mixed signal integrated circuit on a substrate, wherein the substrate is partially covered with a field oxide layer. An oxide layer is formed over a portion of the substrate, wherein the portion of the substrate is not covered with the field oxide layer. First impurities are implanted into the substrate, wherein the first impurities damage the oxide layer. A buffer layer is formed over the oxide layer. A polysilicon layer is formed over the buffer layer. Second impurities are implanted into the polysilicon layer, wherein the buffer layer prevents the oxide layer form being damaged by the second impurities. The polysilicon layer is etched to remove the polysilicon layer, wherein the buffer layer prevents the oxide layer and the substrate from being etched. The portion of buffer layer and the damaged oxide layer over the substrate are removed. The gate oxide layer is formed over the substrate.

    摘要翻译： 一种在衬底上制造混合信号集成电路的工艺，其中衬底部分被场氧化物层覆盖。 在衬底的一部分上形成氧化物层，其中衬底的部分未被场氧化物层覆盖。 第一杂质被注入到基底中，其中第一杂质破坏氧化物层。 在氧化物层上形成缓冲层。 在缓冲层上形成多晶硅层。 将第二杂质注入到多晶硅层中，其中缓冲层防止氧化物层形式被第二杂质损坏。 蚀刻多晶硅层以除去多晶硅层，其中缓冲层防止氧化物层和衬底被蚀刻。 去除衬底上的缓冲层部分和损坏的氧化物层。 栅极氧化层形成在衬底上。

    Peroxide clean before buried contact polysilicon deposition
    4.
    发明授权
    Peroxide clean before buried contact polysilicon deposition 失效
    过氧化物清除后埋入多晶硅沉积

    公开(公告)号：US5328867A

    公开(公告)日：1994-07-12

    申请号：US57881

    申请日：1993-05-07

    申请人： Sun-Chieh Chien ,  Yu-Ju Liu

    发明人： Sun-Chieh Chien ,  Yu-Ju Liu

    IPC分类号： H01L21/306 ,  H01L21/44

    CPC分类号： H01L21/02052 ,  Y10S148/017 ,  Y10S148/118 ,  Y10S438/906

    摘要： A method of removing impurities from the surface of an integrated circuit and forming a uniform thin native oxide layer on the same surface of an integrated circuit is described. A hydrofluoric acid solution, followed by a rinse and spin dry, is often used to remove gate oxide from within an opening etched in a polysilicon layer. The rinsing leaves water spots. Spin drying leaves impurities where water tracks were. An H.sub.2 O.sub.2 cleaning is performed to remove the water spots. After the cleaning, a uniform thin layer of native oxide is formed on the surface of the silicon substrate. A second layer of polysilicon is deposited over this first thin native oxide layer and doped with an implant dosage chosen so that it will go through the uniform native oxide layer. The substrate is annealed to drive in the buried contact. Processing continues to form polysilicon or silicide gate electrodes. Source and drain regions are formed within the openings to the silicon substrate between the gate electrodes. Spacers are formed on the sidewalls of the gate electrodes. An insulating layer is deposited over the surface of the silicon substrate. Contact openings are etched through the insulating layer to the second polysilicon layer and to the silicon substrate. A metal layer is deposited over the insulating layer and filling the openings to the second polysilicon layer and the silicon substrate. The metal layer is patterned, completing the formation of the buried contacts within the integrated circuit.

    摘要翻译： 描述了从集成电路的表面去除杂质并在集成电路的同一表面上形成均匀的薄的自然氧化物层的方法。 通常使用氢氟酸溶液，随后进行冲洗和旋转干燥，以从蚀刻在多晶硅层中的开口内除去栅极氧化物。 冲洗留下水斑。 旋转干燥留下水痕的杂质。 进行H2O2清洗以除去水斑。 在清洁之后，在硅衬底的表面上形成均匀的自然氧化物薄层。 第二层多晶硅沉积在该第一薄的自然氧化物层上，并且掺杂有选择的注入剂量，使得其将穿过均匀的自然氧化物层。 将衬底退火以在埋入触点中驱动。 处理继续形成多晶硅或硅化物栅电极。 源极和漏极区域形成在栅极电极之间的硅衬底的开口内。 隔板形成在栅电极的侧壁上。 绝缘层沉积在硅衬底的表面上。 接触开口通过绝缘层蚀刻到第二多晶硅层和硅衬底。 金属层沉积在绝缘层上并将开口填充到第二多晶硅层和硅衬底。 金属层被图案化，完成集成电路内的埋入触点的形成。

    Method of determining number of light sources
    8.
    发明授权
    Method of determining number of light sources 失效
    确定光源数量的方法

    公开(公告)号：US08174688B2

    公开(公告)日：2012-05-08

    申请号：US12703786

    申请日：2010-02-11

    申请人： Shih-Chen Shi ,  Yi-Ting Chao ,  Yu-Ju Liu

    发明人： Shih-Chen Shi ,  Yi-Ting Chao ,  Yu-Ju Liu

    IPC分类号： G01J1/02

    CPC分类号： H05B33/0866

    摘要： A method of determining the number of light sources is adapted to determine the number of each kind of light sources of an illumination device. The method includes following steps. A photon number of a single light source of each kind of the light sources is calculated. Next, a number ratio of each kind of the light sources is determined according to a power ratio of each kind of the light sources and the photon number of a single light source of each kind of the light sources. Finally, the number of each kind of the light sources is determined according to the number ratio and a total number of the light sources of the illumination device.

    摘要翻译： 确定光源数量的方法适于确定照明装置的每种光源的数量。 该方法包括以下步骤。 计算每种光源的单个光源的光子数。 接下来，根据各种光源的功率比和各种光源的单个光源的光子数来确定各种光源的数量比。 最后，根据数量比和照明装置的光源总数确定各种光源的数量。

    LIGHT COVER AND ILLUMINATING APPARATUS APPLYING THE SAME
    9.
    发明申请
    LIGHT COVER AND ILLUMINATING APPARATUS APPLYING THE SAME 审中-公开
    适用于其的遮光罩和照明装置

    公开(公告)号：US20110242807A1

    公开(公告)日：2011-10-06

    申请号：US12752090

    申请日：2010-03-31

    申请人： William D. Little, JR. ,  Yu-Ju Liu ,  Kuan-Hung Chen

    发明人： William D. Little, JR. ,  Yu-Ju Liu ,  Kuan-Hung Chen

    IPC分类号： F21V5/00

    CPC分类号： F21V5/007 ,  F21S8/086 ,  F21W2131/103 ,  F21Y2115/10

    摘要： A light cover and an illuminating apparatus applying the same are provided. The illuminating apparatus comprises the light cover and a plurality of light sources. The light cover comprises a substrate provided with a plurality of recesses on a front surface and a plurality of lenses integrated with the substrate and respectively located in the recesses. The lenses are oriented in a same direction. The light sources are disposed corresponding to the lenses. Each of the light sources is adapted to emit a light. Each of the lenses is adapted to receive the light and transform the light into a predefined light output.

    摘要翻译： 提供了一种灯罩和应用它的照明装置。 照明装置包括灯罩和多个光源。 光罩包括在前表面上设置有多个凹部的基板和与该基板一体化且分别位于凹部中的多个透镜。 透镜朝向相同的方向。 光源相对于透镜设置。 每个光源适于发光。 每个透镜适于接收光并将光转换成预定义的光输出。

    LIGHT EMITTING DEVICE AND LENS THEREOF
    10.
    发明申请
    LIGHT EMITTING DEVICE AND LENS THEREOF 审中-公开
    发光装置及其透镜

    公开(公告)号：US20110235338A1

    公开(公告)日：2011-09-29

    申请号：US12749488

    申请日：2010-03-29

    申请人： Kuan-Hung Chen ,  Yu-Ju Liu

    发明人： Kuan-Hung Chen ,  Yu-Ju Liu

    IPC分类号： F21V3/04 ,  F21V5/04 ,  F21V3/02

    CPC分类号： F21V5/04 ,  F21W2131/103 ,  F21Y2115/10 ,  G02B19/0014 ,  G02B19/0061 ,  G02B27/0955

    摘要： A lens and a light emitting device applying the same are provided. The lens has a first profile along a first cross-section and a second profile along a second cross-section perpendicular to the first cross-section. The first profile is asymmetric with respect to the second cross-section, and the second profile is symmetric with respect to the first cross-section. A contour center of a light emergent surface of the lens is located on an intersection of the first cross-section and the second cross-section. The light emergent surface comprises a first curved surface and a second curved surface being connected with each other at the second cross-section. Furthermore, a curvature of the first curved surface and a curvature of the second curved surface are discontinuous at the contour center. The light emitting device applies the lens for receiving a light emitted from a light source and provides an asymmetric light output.

    摘要翻译： 提供了一种透镜和应用该透镜的发光装置。 透镜具有沿着第一横截面的第一轮廓和沿垂直于第一横截面的第二横截面的第二轮廓。 第一轮廓相对于第二横截面是不对称的，并且第二轮廓相对于第一横截面是对称的。 透镜的光出射表面的轮廓中心位于第一横截面和第二横截面的交叉点上。 光出射表面包括在第二横截面处彼此连接的第一弯曲表面和第二弯曲表面。 此外，第一曲面的曲率和第二曲面的曲率在轮廓中心处不连续。 发光装置应用用于接收从光源发射的光的透镜，并提供非对称光输出。