摘要:
The present invention relates to a sulfonamide derivative which is useful as an active ingredient of pharmaceutical preparations. The sulfonamide derivatives of the present invention have CCR3 (CC type chemokine receptor) antagonistic activity, and can be used for the prophylaxis and treatment of diseases associated with CCR3 activity, in particular for the treatment of asthma, atopic dermatitis, allergic rhinitis and other inflammatory/immunological disorders.
摘要:
The present invention relates to a sulfonamide derivative which is useful as an active ingredient of pharmaceutical preparations. The sulfonamide derivatives of the present invention have CCR3 (CC type chemokine receptor) antagonistic activity, and can be used for the prophylaxis and treatment of diseases associated with CCR3 activity, in particular for the treatment of asthma, atopic dermatitis, allergic rhinitis and other inflammatory/immunological disorders.
摘要:
The present invention relates to a sulfonamide derivative which is useful as an active ingredient of pharmaceutical preparations. The sulfonamide derivatives of the present invention have CCR3 (CC type chemokine receptor) antagonistic activity, and can be used for the prophylaxis and treatment of diseases associated with CCR3 activity, in particular for the treatment of asthma, atopic dermatitis, allergic rhinitis and other inflammatory/immunological disorders.
摘要:
The present invention relates to a sulfonamide derivative which is useful as an active ingredient of pharmaceutical preparations. The sulfonamide derivatives of the present invention have CCR3 (CC type chemokine receptor) antagonistic activity, and can be used for the prophylaxis and treatment of diseases associated with CCR3 activity, in particular for the treatment of asthma, atopic dermatitis, allergic rhinitis and other inflammatory/immunological disorders.
摘要:
Thin film transistors having a high current drive capability and a suitable threshold voltage are provided. The thin film transistor includes a gate electrode, an insulating layer formed on the gate electrode, a semiconductor layer formed on the insulating layer, and source/drain electrodes formed on the semiconductor layer. The semiconductor layer includes a plurality of regions separated from each other in a longitudinal direction of the source/drain electrodes.
摘要:
A focus controller includes an evaluation value generating unit and a control unit. An evaluation value generating unit obtains a first evaluation value based on a first signal output from a pixel part of an imaging unit by scanning the pixel part in a first direction and obtains a second evaluation value based on a second signal output from the pixel part by scanning the pixel part in a second direction different from the first direction. When a first movement direction of a focus lens based on the first evaluation value and a second movement direction of a focus lens based on the second evaluation value are in the same direction, the control unit performs an auto focus operation in order to move the focus lens in the movement direction determined as the same direction.
摘要:
A shift register is formed by connecting unit circuits 11 in multi-stage. One electrode of a capacitor Cap2 in the unit circuit 11 is connected to the gate terminal (node N1) of a transistor T2, and the other connected to a node N2. A compensation circuit composed of transistors T3 to T5 provides a clock signal CKB to the node N2 when the node N1 potential is at low level, and applies a low-level potential to the node N2 when the node N1 potential is at high level. Accordingly, even when the gate potential of the transistor T2 changes with a change in a clock signal CK, a signal that cancels out the change is provided through the capacitor Cap2, stabilizing the gate potential of the transistor T2. Thus, a change in the control terminal potential of an output transistor associated with a change in a clock signal is prevented.
摘要:
The present invention provides a shift register and a display device, each of which operates stably. The present invention relate to a shift register, comprising a thin-film transistor which includes a source electrode, a drain electrode, and a gate electrode, the thin-film transistor being a bottom gate thin-film transistor which includes a comb-shaped source/drain structure, the gate electrode being provided with at least one of a cut and an opening in at least one of a region overlapping with the source electrode and a region overlapping with the drain electrode.
摘要:
The present invention provides a circuit board with a reduced circuit area, and a display device comprising the circuit board and a narrower picture frame. The circuit board of the present invention comprises: a bottom gate thin film transistor comprising a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode; and a top gate thin film transistor comprising a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode, wherein the first semiconductor layer and the second semiconductor layer are formed from the same material, and the first drain electrode or the first source electrode and the second gate electrode are connected without interposing any other thin film transistor therebetween, and have the same electric potential.
摘要:
Provided is a shift register configured by cascade connecting unit circuits each including a bootstrap circuit. In at least one example embodiment, for the unit circuits, a time period during which a transistor is in an ON state and a clock signal is high level corresponds to a clock passing period. Among transistors whose one conduction terminal is connected to a gate of the transistor, channel lengths of transistors configured such that a low-level potential is fed to gates of the transistors to turn the transistors to an OFF state in the clock passing period and that a low-level potential is applied to the conduction terminal of the transistors in the clock passing period are made longer than the channel length of the transistor. With this, it is possible to reduce a leakage current in the clock passing period, and to prevent the fluctuation of a gate potential of the transistor and dullness in an output signal from occurring.