公开(公告)号：US06430806B1

公开(公告)日：2002-08-13

申请号：US09602536

申请日：2000-06-23

申请人： Yingjian Chen ,  Ron Barr ,  Hua-Ching Tong ,  Stone Shi ,  Kyusik Sin

发明人： Yingjian Chen ,  Ron Barr ,  Hua-Ching Tong ,  Stone Shi ,  Kyusik Sin

IPC分类号： G11B5147

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3967 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： An inductive write element for use with a magnetic data recording and retrieval system is provided. The write element includes a magnetic yoke having an electrically conductive coil passing there through. The yoke is constructed of first and second magnetic poles, and performance of the write element is improved by the inclusion of a very thin pedestal of a high magnetic moment material on the first pole in the pole tip region. Further performance gains are realized by providing a tapered edge on the pedestal to facilitate magnetic flux flow through the pedestal.

摘要翻译： 提供了一种用于磁数据记录和检索系统的感应写入元件。 写入元件包括具有通过其的导电线圈的磁轭。 轭由第一和第二磁极构成，并且通过在极尖区域的第一极上包括非常薄的高磁矩材料基座来提高写入元件的性能。 通过在基座上设置锥形边缘以促进通过基座的磁通量来实现进一步的性能增益。

公开(公告)号：US06650503B1

公开(公告)日：2003-11-18

申请号：US10170979

申请日：2002-06-13

申请人： Yingjian Chen ,  Ron Barr ,  Hua-Ching Tong ,  Stone Shi ,  Kyusik Sin

发明人： Yingjian Chen ,  Ron Barr ,  Hua-Ching Tong ,  Stone Shi ,  Kyusik Sin

IPC分类号： G11B5147

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3967 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： An inductive write element for use with a magnetic data recording and retrieval system is provided. The write element includes a magnetic yoke having an electrically conductive coil passing there through. The yoke is constructed of first and second magnetic poles, and performance of the write element is improved by the inclusion of a very thin pedestal of a high magnetic moment material on the first pole in the pole tip region. Further performance gains are realized by providing a tapered edge on the pedestal to facilitate magnetic flux flow through the pedestal.

摘要翻译： 提供了一种用于磁数据记录和检索系统的感应写入元件。 写入元件包括具有通过其的导电线圈的磁轭。 轭由第一和第二磁极构成，并且通过在极尖区域的第一极上包括非常薄的高磁矩材料基座来提高写入元件的性能。 通过在基座上设置锥形边缘以促进通过基座的磁通量来实现进一步的性能增益。

公开(公告)号：US07110289B1

公开(公告)日：2006-09-19

申请号：US10816271

申请日：2004-03-31

申请人： Kyusik Sin ,  Hugh Craig Hiner ,  Xizeng (Stone) Shi ,  William D. Jensen ,  Hua-Ching Tong ,  Matthew R Gibbons ,  Roberto Bez ,  Giulio Casagrande ,  Paolo Cappeletti ,  Marco Pasotti

发明人： Kyusik Sin ,  Hugh Craig Hiner ,  Xizeng (Stone) Shi ,  William D. Jensen ,  Hua-Ching Tong ,  Matthew R Gibbons ,  Roberto Bez ,  Giulio Casagrande ,  Paolo Cappeletti ,  Marco Pasotti

IPC分类号： G11C11/15

CPC分类号： G11C11/15

摘要： In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.

摘要翻译： 在用于减少由磁存储器消耗的功率的方法和系统中，磁存储器单元耦合到位线并与多个数字线相关联。 位线中提供位线电流。 与位线电流基本相同的时刻，在数字线中并联提供数字电流。 数字和位线电流允许磁存储单元被并行写入多个状态。

公开(公告)号：US06661625B1

公开(公告)日：2003-12-09

申请号：US09789207

申请日：2001-02-20

申请人： Kyusik Sin ,  Ming Mao ,  Hua-Ching Tong ,  Chester Xiaowen Chien

发明人： Kyusik Sin ,  Ming Mao ,  Hua-Ching Tong ,  Chester Xiaowen Chien

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996

摘要： A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (CrxOy) or niobium oxide (NbOz). The chromium oxide material (CrxOy) can be, for example: Cr3O4, Cr2O3, CrO2, CrO3, Cr5O12, Cr6O15, other stoichiometry, or any combination thereof. The niobium oxide (NbOz) can be, for example: NbO, NbO2, Nb2O5, Nb2O3, Nb12O29, Nb11O27, other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.

摘要翻译： 具有高性能读取部分的薄膜读/写头，其包括由诸如氧化铬（Cr x O y）或氧化铌（NbO z）的新的低电阻金属氧化物隧道势垒材料组成的自旋相关隧道传感器。 氧化铬材料（Cr x O y）可以是例如：Cr 3 O 4，Cr 2 O 3，CrO 2，CrO 3，Cr 5 O 12，Cr 6 O 15，其它化学计量或其任何组合。 铌氧化物（NbOz）可以是例如NbO，NbO 2，Nb 2 O 5，Nb 2 O 3，Nb 12 O 29，Nb 11 O 27，其它化学计量或其任何组合。 氧化铬和氧化铌材料提供了具有可接受的磁阻比的非常低的传感器电阻，这将使得能够制造高密度读取传感器，并且因此读取具有高数据传输速率的磁头。

公开(公告)号：US06747301B1

公开(公告)日：2004-06-08

申请号：US10071798

申请日：2002-02-06

申请人： Hugh Craig Hiner ,  Kyusik Sin ,  Shin Funada ,  Xizeng Shi ,  Hua-Ching Tong

发明人： Hugh Craig Hiner ,  Kyusik Sin ,  Shin Funada ,  Xizeng Shi ,  Hua-Ching Tong

IPC分类号： H01L2976

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/3213 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/226

摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.

摘要翻译： 公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。 据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。 这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。 降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

公开(公告)号：US06639291B1

公开(公告)日：2003-10-28

申请号：US10071796

申请日：2002-02-06

申请人： Kyusik Sin ,  Shin Funada ,  Hugh Craig Hiner ,  Hua-Ching Tong ,  Xizeng Shi

发明人： Kyusik Sin ,  Shin Funada ,  Hugh Craig Hiner ,  Hua-Ching Tong ,  Xizeng Shi

IPC分类号： H01L2972

CPC分类号： H01L27/226 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/16 ,  H01F10/3227 ,  H01F10/3254 ,  H01L29/66984 ,  H01L43/08

摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.

摘要翻译： 公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。 已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。 这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。 降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。 增加隧道屏障的厚度可以提高制造成本，例如提高产量。

公开(公告)号：US06888184B1

公开(公告)日：2005-05-03

申请号：US10074394

申请日：2002-02-11

申请人： Xizeng Shi ,  Matthew Gibbons ,  Hua-Ching Tong ,  Kyusik Sin

发明人： Xizeng Shi ,  Matthew Gibbons ,  Hua-Ching Tong ,  Kyusik Sin

IPC分类号： G11C11/16 ,  H01L21/336 ,  H01L27/22

CPC分类号： G11C11/16 ,  H01L27/222

摘要： A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.

摘要翻译： 公开了一种在半导体衬底上制造的磁存储器。 该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。 多个磁隧道结中的每一个包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。 多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。 多个屏蔽件与多个磁性隧道结电隔离。 多个磁隧道结在多个屏蔽之间。

公开(公告)号：US07007372B1

公开(公告)日：2006-03-07

申请号：US10656311

申请日：2003-09-05

申请人： Yingjian Chen ,  Hua-Ching Tong ,  Lei Wang ,  Xizeng Shi

发明人： Yingjian Chen ,  Hua-Ching Tong ,  Lei Wang ,  Xizeng Shi

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3146 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3153 ,  G11B5/3967 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49071 ,  Y10T29/49073

摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.

摘要翻译： 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。 导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

公开(公告)号：US06618223B1

公开(公告)日：2003-09-09

申请号：US09617791

申请日：2000-07-18

申请人： Yingjian Chen ,  Hua-Ching Tong ,  Lei Wang ,  Xizeng Shi

发明人： Yingjian Chen ,  Hua-Ching Tong ,  Lei Wang ,  Xizeng Shi

IPC分类号： G11B5147

CPC分类号： G11B5/3146 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3153 ,  G11B5/3967 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49071 ,  Y10T29/49073

摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.

摘要翻译： 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩（高Bsat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括具有高Bsat材料的薄内层（还优选具有CoZrCr层压层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料如Ni-Fe合金构成。 导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

公开(公告)号：US06873547B1

公开(公告)日：2005-03-29

申请号：US10080396

申请日：2002-02-22

申请人： Xizeng(Stone) Shi ,  Hua-Ching Tong ,  Aric K. Menon

发明人： Xizeng(Stone) Shi ,  Hua-Ching Tong ,  Aric K. Menon

IPC分类号： G11C11/15 ,  G11C11/16

CPC分类号： G11C11/16

摘要： A magnetic memory is disclosed. The magnetic memory includes a first magnetic tunneling junction and a reference magnetic tunneling junction. The first magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The reference magnetic tunneling junction includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer. The magnetic memory also includes means for comparing a first output of the first magnetic tunneling junction with a reference output of the reference magnetic tunneling junction.

摘要翻译： 公开了磁存储器。 磁存储器包括第一磁隧道结和参考磁隧道结。 第一磁隧道结包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的第一绝缘层。 参考磁隧道结包括第三铁磁层，第四铁磁层和第三铁磁层与第四铁磁层之间的第二绝缘层。 磁存储器还包括用于将第一磁隧道结的第一输出与参考磁隧道结的参考输出进行比较的装置。