公开(公告)号：US06518635B1

公开(公告)日：2003-02-11

申请号：US09610862

申请日：2000-07-06

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Yuji Abe ,  Yasunori Tokuda

IPC分类号： H01L27108

CPC分类号： H01L29/517 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28167

摘要： A major object of the present invention is to provide an improved semiconductor device so as to be able to reduce gate electric field concentration at a channel edge, suppress decrease in the threshold during MOSFET operation and reduce the leakage current. A gate insulation film is formed on a semiconductor substrate. A gate electrode is formed on the semiconductor substrate with the gate insulation film therebetween. The dielectric constant of the gate insulation film is not uniform in the surface.

摘要翻译： 本发明的主要目的是提供一种改进的半导体器件，以便能够降低沟道边缘处的栅极电场集中，抑制MOSFET操作期间阈值的降低并减少漏电流。 在半导体衬底上形成栅极绝缘膜。 栅电极形成在半导体衬底上，其间具有栅极绝缘膜。 栅极绝缘膜的介电常数在表面上不均匀。

公开(公告)号：US07939943B2

公开(公告)日：2011-05-10

申请号：US12268509

申请日：2008-11-11

申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

IPC分类号： H01L23/48 ,  H01L29/43

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.

摘要翻译： 提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由作为防止氧化Ta膜的抗氧化剂膜和氮化物半导体的p型接触层的第一Pd膜，Ta膜和第二Pd膜形成。 在第二Pd膜上形成焊盘电极。 作为抗氧化剂膜的第二Pd膜形成在形成p电极的Ta膜的整个上表面上，以防止Ta膜的氧化。 这抑制了p电极和焊盘电极之间的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供低电阻p电极。

公开(公告)号：US20090142871A1

公开(公告)日：2009-06-04

申请号：US12323634

申请日：2008-11-26

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

公开(公告)号：US07678597B2

公开(公告)日：2010-03-16

申请号：US12323634

申请日：2008-11-26

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

公开(公告)号：US20090170304A1

公开(公告)日：2009-07-02

申请号：US12337878

申请日：2008-12-18

申请人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

发明人： Yoichiro Tarui ,  Kenichi Ohtsuka ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

IPC分类号： H01L21/441

CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.

摘要翻译： 提供一种制造半导体器件的方法，其可以将欧姆电极的接触电阻降低到p型氮化物半导体层，并且可以实现长期稳定的操作。 在电极形成步骤中，通过在第一p型欧姆电极上连续层压作为第一p型欧姆电极的Pd膜和作为第二p型欧姆电极的Ta膜，在电极形成步骤中形成金属膜的p型欧姆电极 p型GaN接触层，金属膜形成为包含氧原子。 在金属膜中存在氧原子的情况下，在热处理工序中，金属膜的p型欧姆电极在不含氧原子气体的气氛中进行热处理。

公开(公告)号：US20090160054A1

公开(公告)日：2009-06-25

申请号：US12269914

申请日：2008-11-13

申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yoichiro Tarui ,  Yasunori Tokuda

发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yoichiro Tarui ,  Yasunori Tokuda

IPC分类号： H01L21/283 ,  H01L29/45

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/32341 ,  H01S5/34333

摘要： A nitride semiconductor device is provided which reduces the contact resistance at the interface between a P-type electrode and a nitride semiconductor layer. A nitride semiconductor device includes a P-type nitride semiconductor layer and a P-type electrode formed on the P-type nitride semiconductor layer. The P-type electrode is formed by successive laminations of a metal layer of a metal having a work function of 5.1 eV or more, a Pd layer of palladium, and a Ta layer of tantalum on the P-type nitride semiconductor layer.

摘要翻译： 提供一种降低P型电极和氮化物半导体层之间的界面处的接触电阻的氮化物半导体器件。 氮化物半导体器件包括P型氮化物半导体层和形成在P型氮化物半导体层上的P型电极。 P型电极通过在P型氮化物半导体层上连续层叠功函数为5.1eV以上的金属的金属层，钯的Pd层和Ta的钽层而形成。

公开(公告)号：US20090140389A1

公开(公告)日：2009-06-04

申请号：US12268509

申请日：2008-11-11

申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yasunori Tokuda

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.

摘要翻译： 提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由作为防止氧化Ta膜的抗氧化剂膜和氮化物半导体的p型接触层的第一Pd膜，Ta膜和第二Pd膜形成。 在第二Pd膜上形成焊盘电极。 作为抗氧化剂膜的第二Pd膜形成在形成p电极的Ta膜的整个上表面上，以防止Ta膜的氧化。 这抑制了p电极和焊盘电极之间的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供低电阻p电极。

公开(公告)号：US07842962B2

公开(公告)日：2010-11-30

申请号：US11274422

申请日：2005-11-16

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

IPC分类号： H01L33/00

CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。 由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。

公开(公告)号：US20060003490A1

公开(公告)日：2006-01-05

申请号：US11143685

申请日：2005-06-03

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

IPC分类号： H01L21/44 ,  H01L21/48

CPC分类号： H01L21/28575 ,  H01L21/30621 ,  H01L33/0075 ,  H01S5/32341

摘要： A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

摘要翻译： 氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻 通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。

公开(公告)号：US07378351B2

公开(公告)日：2008-05-27

申请号：US11143685

申请日：2005-06-03

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Zempei Kawazu ,  Yuji Abe

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28575 ,  H01L21/30621 ,  H01L33/0075 ,  H01S5/32341

摘要： A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

摘要翻译： 氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻 通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。