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    System for fabricating liquid crystal display and method of fabricating liquid crystal display using the same
    1.
    发明申请
    System for fabricating liquid crystal display and method of fabricating liquid crystal display using the same 有权
    用于制造液晶显示器的系统及使用其制造液晶显示器的方法

    公开(公告)号：US20050248715A1

    公开(公告)日：2005-11-10

    申请号：US11095598

    申请日：2005-04-01

    申请人： Yong Byun ,  Moo Park ,  Sung Jung ,  Sung Kang ,  Jong Kim ,  Young Ha ,  Sang Lee ,  Sang Park ,  Hun Choo ,  Hyug Kweon ,  Kyung Chae ,  Hae Son ,  Sang Shin ,  Jong Lim

    发明人： Yong Byun ,  Moo Park ,  Sung Jung ,  Sung Kang ,  Jong Kim ,  Young Ha ,  Sang Lee ,  Sang Park ,  Hun Choo ,  Hyug Kweon ,  Kyung Chae ,  Hae Son ,  Sang Shin ,  Jong Lim

    IPC分类号： G02F1/13 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341

    CPC分类号： G02F1/1303 ,  G02F1/133351 ,  G02F1/1339 ,  G02F1/1341 ,  G02F2001/133354 ,  G02F2001/13415

    摘要： Disclosed is a system for fabricating a liquid crystal display using liquid crystal dropping and a method of fabricating a liquid crystal display using the same. The present invention includes a liquid crystal forming line dropping liquid crystals on the first substrate, a sealant forming line forming the sealant on the second substrate, and a bonding and hardening line bonding the two substrates to each other and hardening the sealant, printing a sealant, bonding the substrates each other, and hardening the sealant and an inspection process line of cutting the bonded substrates into panel units and grinding and inspecting the unit panels. And, the GAP process line includes And, the present invention includes the processes of dropping LC on a first substrate using a dispenser, forming a main UV hardening sealant on a second substrate, bonding the first and second substrates to each other in a vacuum state, UV-hardening the main UV hardening sealant, cutting the bonded substrates into cell units, grinding the cut substrates, and inspecting the grinded substrates finally.

    摘要翻译： 公开了一种使用液晶滴下制造液晶显示器的系统和使用其制造液晶显示器的方法。 本发明包括在第一基板上滴下液晶的液晶形成线，在第二基板上形成密封剂的密封剂形成线，以及将两个基板彼此接合并使密封剂硬化的接合和硬化线，印刷密封剂 ，将基板粘合，使密封剂硬化，将粘接后的基板切割成面板单元的检查处理线，研磨和检查单元面板。 而且，GAP工艺线包括：本发明包括使用分配器在第一衬底上滴加LC的过程，在第二衬底上形成主UV硬化密封剂，在真空状态下将第一和第二衬底彼此接合 UV固化主要的UV硬化密封剂，将粘合的基材切成电池单元，研磨切割的基材，最后检查研磨的基材。

    Micro optical communication device package
    7.
    发明申请
    Micro optical communication device package 审中-公开
    微光通讯器件封装

    公开(公告)号：US20050078920A1

    公开(公告)日：2005-04-14

    申请号：US10734146

    申请日：2003-12-15

    申请人： Yeong Lee ,  Seong Lee ,  Sung Jung ,  Moo Park ,  Suk Hong

    发明人： Yeong Lee ,  Seong Lee ,  Sung Jung ,  Moo Park ,  Suk Hong

    IPC分类号： G02B6/26 ,  B81B7/02 ,  G02B6/00 ,  G02B6/35 ,  G02B6/36 ,  G02B6/38 ,  G02B6/42 ,  G02B26/08 ,  H04B10/00 ,  H04B10/40 ,  H04B10/50 ,  H04B10/60

    CPC分类号： G02B6/3582 ,  G02B6/266 ,  G02B6/3552 ,  G02B6/3594 ,  G02B6/36 ,  G02B6/3887 ,  G02B6/4248

    摘要： The present invention relates to a micro optical communication device package. The package of the invention comprises a Micro-Electro-Mechanical System (MEMS) chip for executing an optical communication function. The MEMS chip is mounted on a base. An upper housing having an opened bottom is placed on the base to form an internal space together with the base. The upper housing is sealed with the base to hermetically seal the MEMS chip within the internal space. The MEMS chip is connected an optical fiber, which is extended through the upper housing to form a light path. A boot is fit around the optical fiber and fixed to the upper housing to seal a portion of the upper housing for allowing passage of the optical fiber.

    摘要翻译： 本发明涉及一种微型光通信设备封装。 本发明的封装包括用于执行光通信功能的微机电系统（MEMS）芯片。 MEMS芯片安装在基座上。 具有开口底部的上壳体被放置在基座上以与基部一起形成内部空间。 上壳体与基座密封，以将MEMS芯片密封在内部空间内。 MEMS芯片连接有光纤，该光纤通过上壳体延伸以形成光路。 导光罩装在光纤周围并固定在上壳体上，以密封上壳体的一部分，以允许光纤通过。

    Slot antenna having slots formed on both sides of dielectric substrate
    8.
    发明申请
    Slot antenna having slots formed on both sides of dielectric substrate 有权
    插槽天线，其具有形成在电介质基板两侧的槽

    公开(公告)号：US20050057412A1

    公开(公告)日：2005-03-17

    申请号：US10743459

    申请日：2003-12-23

    申请人： Jung Hwang ,  Sung Jung ,  Woo Yang ,  Jae Lee ,  Sung Kang ,  Yun Kim

    发明人： Jung Hwang ,  Sung Jung ,  Woo Yang ,  Jae Lee ,  Sung Kang ,  Yun Kim

    IPC分类号： H01Q1/38 ,  H01Q13/10 ,  H01Q13/16

    CPC分类号： H01Q1/38 ,  H01Q13/16

    摘要： The present invention is provided to manufacture a slot antenna having slots formed on both sides, that is, a top and a bottom of a dielectric substrate, wherein electric fields in the slots are generated in the utmost same direction. According to this structure, it is possible to realize a compact and lightweight slot antenna having higher gain and radiation efficiency characteristics in comparison with the conventional meandered slot antenna.

    摘要翻译： 本发明提供用于制造具有形成在两侧上的槽的缝隙天线，即电介质衬底的顶部和底部，其中槽中的电场在最大相同的方向上产生。 根据该结构，与传统的蜿蜒槽缝天线相比，可以实现具有较高增益和辐射效率特性的紧凑且重量轻的缝隙天线。

    Method of manufacturing nonvolatile memory cell
    9.
    发明申请
    Method of manufacturing nonvolatile memory cell 审中-公开
    制造非易失性存储单元的方法

    公开(公告)号：US20050202633A1

    公开(公告)日：2005-09-15

    申请号：US11123004

    申请日：2005-05-06

    申请人： Jum Kim ,  Sung Jung ,  Sang Lee ,  Min Cho ,  Young Lee

    发明人： Jum Kim ,  Sung Jung ,  Sang Lee ,  Min Cho ,  Young Lee

    IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/66825 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/6656

    摘要： The present invention relates to a method of manufacturing a nonvolatile memory cell. The present invention uses tungsten (W) as an upper layer of a control gate electrode in order to integrate the memory cell and performs an ion implantation process for forming a source region and a drain region before a selective oxidization process that is performed to prevent abnormal oxidization of tungsten (W). Therefore, the present invention can reduce a RC delay time of word lines depending on integration of the memory cell and also secure a given distance between a silicon substrate and a tunnel oxide film. As a result, the present invention can solve a data retention problem of the flash memory.

    摘要翻译： 本发明涉及一种制造非易失性存储单元的方法。 本发明使用钨（W）作为控制栅电极的上层，以便整合存储单元，并且在进行选择性氧化处理之前进行用于形成源区和漏区的离子注入工艺，以防止异常 钨的氧化（W）。 因此，本发明可以根据存储单元的积分来减少字线的RC延迟时间，并且还可以确保硅衬底和隧道氧化物膜之间的给定距离。 结果，本发明可以解决闪速存储器的数据保留问题。

    Non-volatile memory device and fabricating method thereof
    10.
    发明申请
    Non-volatile memory device and fabricating method thereof 失效

    公开(公告)号：US20070131996A1

    公开(公告)日：2007-06-14

    申请号：US11701484

    申请日：2007-02-02

    申请人： Sung Jung ,  Jum Kim

    发明人： Sung Jung ,  Jum Kim

    IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/792

    摘要： The present invention provides a non-volatile memory device and fabricating method thereof, by which a cell size can be lowered despite high degree of cell integration and by which the device fabrication is facilitated. The present invention includes at least two trench isolation layers arranged in a device isolation area of a semiconductor substrate, each having a first depth, a first conductive type well arranged between the at least two trench isolation layers to have a second depth smaller than the first depth, a second conductive type source region and a second conductive type drain region arranged in a prescribed upper part of the first conductive type well to be separated from each other by a channel region in-between, an ONO layer on the channel region of the semiconductor substrate, the ONO layer comprising a lower oxide layer, a nitride layer, and an upper oxide layer, and a wordline conductor layer on the ONO layer.