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    Method for fabricating a semiconductor device
    1.
    发明授权
    Method for fabricating a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07560319B2

    公开(公告)日：2009-07-14

    申请号：US11730262

    申请日：2007-03-30

    申请人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    发明人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    IPC分类号： H01L21/84

    CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L21/84

    摘要： A method of fabricating a semiconductor device includes forming an insulation layer structure on a single-crystalline silicon substrate, forming a first insulation layer structure pattern comprising a first opening by etching a portion of the insulation layer structure, filling the first opening with a non-single-crystalline silicon layer, and forming a single-crystalline silicon pattern by irradiating a first laser beam onto the non-single-crystalline silicon layer. The method also includes forming a second insulation layer structure pattern comprising a second opening by etching a portion of the first insulation layer structure, filling the second opening with a non-single-crystalline silicon-germanium layer, and forming a single-crystalline silicon-germanium pattern by irradiating a second laser beam onto the non-single-crystalline silicon-germanium layer.

    摘要翻译： 一种制造半导体器件的方法包括在单晶硅衬底上形成绝缘层结构，通过蚀刻绝缘层结构的一部分形成包括第一开口的第一绝缘层结构图案， 单晶硅层，并且通过将第一激光束照射到非单晶硅层上而形成单晶硅图案。 该方法还包括通过蚀刻第一绝缘层结构的一部分来形成包括第二开口的第二绝缘层结构图案，用非单晶硅锗层填充第二开口，以及形成单晶硅 - 锗图案，通过将第二激光束照射到非单晶硅 - 锗层上。

    Semiconductor Devices Having Single Crystalline Silicon Layers
    3.
    发明申请
    Semiconductor Devices Having Single Crystalline Silicon Layers 审中-公开
    具有单晶硅层的半导体器件

    公开(公告)号：US20080157095A1

    公开(公告)日：2008-07-03

    申请号：US12045890

    申请日：2008-03-11

    申请人： Yong-Hoon Son ,  Yu-Gyun Shin

    发明人： Yong-Hoon Son ,  Yu-Gyun Shin

    IPC分类号： H01L29/04

    CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/8221 ,  H01L27/0688

    摘要： Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed layer. The first non-single crystalline silicon layer is irradiated with a laser to transform the first non-single crystalline silicon layer into a first single crystalline silicon layer. Corresponding semiconductor devices are also disclosed.

    摘要翻译： 提供具有至少一个单晶硅层的半导体器件的制造方法。 根据这些方法，形成包括硅的第一籽晶层。 然后在第一种子层上形成第一非单晶硅层。 用激光照射第一非单晶硅层，以将第一非单晶硅层转变为第一单晶硅层。 还公开了相应的半导体器件。

    Method of manufacturing a stacked semiconductor device
    4.
    发明申请
    Method of manufacturing a stacked semiconductor device 有权
    叠层半导体器件的制造方法

    公开(公告)号：US20070048913A1

    公开(公告)日：2007-03-01

    申请号：US11510622

    申请日：2006-08-28

    申请人： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee

    发明人： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee

    IPC分类号： H01L21/84

    CPC分类号： H01L21/76879 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/28525 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/481 ,  H01L23/535 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method of manufacturing a stacked semiconductor device, a seed layer including impurity regions may be prepared. A first insulation interlayer pattern having a first opening may be formed on the seed layer. A first SEG process may be carried out to form a first plug partially filling the first opening. A second SEG process may be performed to form a second plug filling the first opening. A third SEG process may be carried out to form a first channel layer on the first insulation interlayer pattern. A second insulation interlayer may be formed on the first channel layer. The second insulation interlayer, the first channel layer and the second plug arranged on the first plug may be removed to expose the first plug. The first plug may be removed to form a serial opening. The serial opening may be filled with a metal wiring.

    摘要翻译： 在制造叠层半导体器件的方法中，可以制备包括杂质区的晶种层。 可以在种子层上形成具有第一开口的第一绝缘层间图案。 可以执行第一SEG过程以形成部分填充第一开口的第一插塞。 可以执行第二SEG过程以形成填充第一开口的第二塞子。 可以执行第三SEG处理以在第一绝缘夹层图案上形成第一沟道层。 可以在第一沟道层上形成第二绝缘中间层。 布置在第一插头上的第二绝缘中间层，第一沟道层和第二插塞可以被去除以暴露第一插塞。 可以移除第一个插头以形成串行开口。 串行开口可以用金属布线填充。

    Epitaxial crystal growth process in the manufacturing of a semiconductor device
    10.
    发明授权
    Epitaxial crystal growth process in the manufacturing of a semiconductor device 有权
    外延晶体生长工艺制造半导体器件

    公开(公告)号：US07364990B2

    公开(公告)日：2008-04-29

    申请号：US11301029

    申请日：2005-12-13

    申请人： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee

    发明人： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee

    IPC分类号： C30B21/36

    CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647

    摘要： First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown, a connection structure of a material having an amorphous state is formed on a portion of the insulation layer located between the first and second preliminary epitaxial layers. The material having an amorphous state is then changed into material having a single-crystalline state. Thus, portions of the first and second epitaxial layers are connected to each other through the connection structure so that the epitaxial layers and the connection structure constitute a single-crystalline structure layer that is free of voids for use as a channel layer or the like of a semiconductor device.

    摘要翻译： 第一和第二初步外延层从绝缘层的开口中的单晶种子生长直到第一和第二外延层彼此连接。 当正在生长第一和第二初步外延层时，在位于第一和第二初步外延层之间的绝缘层的一部分上形成具有非晶状态的材料的连接结构。 然后将具有非晶态的材料变成具有单晶态的材料。 因此，第一外延层和第二外延层的部分通过连接结构彼此连接，使得外延层和连接结构构成无空隙的单晶结构层，用作沟道层等 半导体器件。