Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer
    1.
    发明授权
    Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer 有权
    超声波换能器结构,超声波换能器及超声波换能器的制造方法

    公开(公告)号:US09120127B2

    公开(公告)日:2015-09-01

    申请号:US13616285

    申请日:2012-09-14

    IPC分类号: H01L41/053 B06B1/02

    CPC分类号: B06B1/0292 Y10T29/49005

    摘要: An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.

    摘要翻译: 提供超声换能器结构,超声波换能器和制造超声换能器的方法。 超声波换能器结构包括:驱动晶片,其包括驱动电路; 以及超声波换能器晶片,其设置在所述驱动晶片上并且包括形成有通孔的第一晶片,形成在所述第一晶片上的第一绝缘层,与所述第一绝缘层间隔开的第二晶片,以及空腔 形成在第一绝缘层和第二晶片之间。

    Method of forming a via hole through a glass wafer
    3.
    发明授权
    Method of forming a via hole through a glass wafer 有权
    通过玻璃晶片形成通孔的方法

    公开(公告)号:US07084073B2

    公开(公告)日:2006-08-01

    申请号:US10681217

    申请日:2003-10-09

    IPC分类号: H01L21/302

    摘要: A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.

    摘要翻译: 通过玻璃晶片形成通孔的方法包括在玻璃晶片的外表面上沉积材料层,该材料层的选择比率高于玻璃晶片的选择比,在玻璃晶片的一侧上形成通孔图案部分 所述材料层进行蚀刻所述通路图案部分以形成预备通孔的第一蚀刻,消除在形成所述通路图案部分中使用的剩余图案材料,进行第二蚀刻,其中所述预通孔 被蚀刻以形成具有光滑表面并延伸穿过玻璃晶片的通孔,并且消除材料层。 根据本发明的方法能够通过玻璃晶片形成通孔,而不会形成底切或微小的裂缝,从而提高MEMS元件的成品率和可靠性。

    Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate
    4.
    发明授权
    Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate 失效
    将微机电系统真空安装在基板上的方法和装置

    公开(公告)号:US07172916B2

    公开(公告)日:2007-02-06

    申请号:US10701552

    申请日:2003-11-06

    IPC分类号: H01L21/00

    CPC分类号: B81C1/00285

    摘要: A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.

    摘要翻译: 用于真空安装至少一个微机电系统(MEMS)在基板上的方法和装置包括用于将惰性气体注入真空室的气体注入部分; 用于对准半导体衬底和盖的衬底对准部分,所述盖具有形成在其中的空腔和附着到腔的内表面的吸气剂; 用于将半导体衬底和盖结合在一起的接合部分; 以及控制部分,用于控制衬底对准部分以对准半导体和盖子,用于控制气体注入部分以将惰性气体注入真空室中,并且用于控制接合部分将半导体衬底和盖子结合在一起,之后 注入惰性气体。

    Method of manufacturing a monolithic duplexer
    5.
    发明授权
    Method of manufacturing a monolithic duplexer 有权
    制造单片双工器的方法

    公开(公告)号:US08720023B2

    公开(公告)日:2014-05-13

    申请号:US12647188

    申请日:2009-12-24

    IPC分类号: H03H9/15 H03H3/007

    摘要: A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

    摘要翻译: 公开了一种用于制造超小型高性能单片双工器的方法。 该方法包括在基板上的绝缘层的上表面上沉积和图案化下电极,以暴露绝缘层的第一部分; 在暴露的绝缘层和下电极的上表面上沉积压电层; 在所述压电层的上部沉积金属并图案化所述金属以形成谐振部分和微调电感器,其中所述下部电极电耦合所述谐振部分和所述微调电感器; 通过在谐振部分下蚀刻衬底来形成空腔来制造气隙型FBAR(膜体声共振); 以及将封装基板接合在所述基板上,所述封装基板具有基本上防止所述气隙型FBAR之间的信号流入的相移部。

    System on chip structure comprising air cavity for isolating elements, duplexer, and duplexer fabrication method thereof
    6.
    发明授权
    System on chip structure comprising air cavity for isolating elements, duplexer, and duplexer fabrication method thereof 有权
    包括用于隔离元件的气腔,双工器和双工器制造方法的片上系统结构

    公开(公告)号:US07498900B2

    公开(公告)日:2009-03-03

    申请号:US11517371

    申请日:2006-09-08

    IPC分类号: H03H9/00

    摘要: A duplexer which prevents effects between transmitter and receiver filters. The duplexer include a substrate, a transmitter filter fabricated in a predetermined first area on a surface of the substrate, a receiver filter fabricated in a predetermined second area on the surface of the substrate and an air cavity fabricated in an area between the predetermined first and second areas by etching the substrate to isolate the transmitter and receiver filters from each other. The air cavity is fabricated in the substrate perpendicular to directions along which the transmitter and receiver filters are disposed. Accordingly, physical effects among elements can be effectively intercepted.

    摘要翻译: 防止发射机和接收机滤波器之间影响的双工器。 双工器包括基板,在基板的表面上的预定的第一区域中制造的发送器滤波器,在基板的表面上的预定的第二区域中制造的接收滤波器,以及在预定的第一和第 第二区域通过蚀刻基板以将发射器和接收器滤波器彼此隔离。 空气腔垂直于发射器和接收器滤波器布置的方向在衬底上制造。 因此,可以有效地截获元素之间的物理效应。

    Coupled resonator filter and fabrication method thereof
    7.
    发明申请
    Coupled resonator filter and fabrication method thereof 有权
    耦合谐振滤波器及其制造方法

    公开(公告)号:US20070139139A1

    公开(公告)日:2007-06-21

    申请号:US11455190

    申请日:2006-06-19

    IPC分类号: H03H9/54

    摘要: A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.

    摘要翻译: 提供耦合谐振滤波器和制造耦合谐振滤波器的方法。 该方法包括:在基板的表面上依次堆叠第一电极,第一压电层,第二电极,绝缘层,第三电极,第二压电层和第四电极; 顺序地构图第一电极,第一压电层,第二电极,绝缘层,第三电极,第二压电层和第四电极,以暴露第一,第二和第三电极的区域; 形成分别连接到第一,第二和第三电极的暴露区域和第四电极的区域的多个连接电极; 并且蚀刻在第一电极下方的衬底的区域以形成气隙。

    System on chip structure comprising air cavity for isolating elements, duplexer, and duplexer fabrication method thereof
    8.
    发明申请
    System on chip structure comprising air cavity for isolating elements, duplexer, and duplexer fabrication method thereof 有权
    包括用于隔离元件的气腔,双工器和双工器制造方法的片上系统结构

    公开(公告)号:US20070126527A1

    公开(公告)日:2007-06-07

    申请号:US11517371

    申请日:2006-09-08

    IPC分类号: H03H9/70

    摘要: A duplexer which prevents effects between transmitter and receiver filters. The duplexer include a substrate, a transmitter filter fabricated in a predetermined first area on a surface of the substrate, a receiver filter fabricated in a predetermined second area on the surface of the substrate and an air cavity fabricated in an area between the predetermined first and second areas by etching the substrate to isolate the transmitter and receiver filters from each other. The air cavity is fabricated in the substrate perpendicular to directions along which the transmitter and receiver filters are disposed. Accordingly, physical effects among elements can be effectively intercepted.

    摘要翻译: 防止发射机和接收机滤波器之间影响的双工器。 双工器包括基板,在基板的表面上的预定的第一区域中制造的发送器滤波器,在基板的表面上的预定的第二区域中制造的接收滤波器,以及在预定的第一和第 第二区域通过蚀刻基板以将发射器和接收器滤波器彼此隔离。 空气腔垂直于发射器和接收器滤波器布置的方向在衬底上制造。 因此,可以有效地截获元素之间的物理效应。

    Electro-acoustic transducer and method of manufacturing the same
    9.
    发明授权
    Electro-acoustic transducer and method of manufacturing the same 有权
    电声换能器及其制造方法

    公开(公告)号:US09120126B2

    公开(公告)日:2015-09-01

    申请号:US13401324

    申请日:2012-02-21

    申请人: Seog-woo Hong

    发明人: Seog-woo Hong

    摘要: Electro-acoustic transducers and methods of manufacturing the electro-acoustic transducer are provided. An electro-acoustic transducer includes: a first wafer including a first substrate in which a plurality of electro-acoustic transducer cells are formed; and a second wafer disposed in a lower portion of the first wafer, and including a second substrate in which a plurality of through wafer vias are formed. A method of manufacturing an electro-acoustic transducer includes: forming a plurality of electro-acoustic transducer cells in a first substrate of a first wafer; forming a plurality of through wafer vias in a second substrate of a second wafer; and bonding the first and second wafers to each other.

    摘要翻译: 提供电声换能器和制造电声换能器的方法。 电声换能器包括:第一晶片,其包括形成有多个电声换能器单元的第一基板; 以及第二晶片,其设置在所述第一晶片的下部,并且包括形成有多个贯通晶片通孔的第二基板。 一种制造电声换能器的方法包括:在第一晶片的第一衬底中形成多个电声换能器单元; 在第二晶片的第二衬底中形成多个通孔晶片通孔; 以及将所述第一和第二晶片彼此结合。

    Coupled resonator filter and fabrication method thereof
    10.
    发明授权
    Coupled resonator filter and fabrication method thereof 有权
    耦合谐振滤波器及其制造方法

    公开(公告)号:US07548139B2

    公开(公告)日:2009-06-16

    申请号:US11455190

    申请日:2006-06-19

    IPC分类号: H03H9/17 H03H9/00

    摘要: A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.

    摘要翻译: 提供耦合谐振滤波器和制造耦合谐振滤波器的方法。 该方法包括:在基板的表面上依次堆叠第一电极,第一压电层,第二电极,绝缘层,第三电极,第二压电层和第四电极; 顺序地构图第一电极,第一压电层,第二电极,绝缘层,第三电极,第二压电层和第四电极,以暴露第一,第二和第三电极的区域; 形成分别连接到第一,第二和第三电极的暴露区域和第四电极的区域的多个连接电极; 并且蚀刻在第一电极下方的衬底的区域以形成气隙。