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26 条记录 (耗时 0.051 秒)

    Solid fuel burner
    3.
    发明申请
    Solid fuel burner 审中-公开

    公开(公告)号：US20190162403A1

    公开(公告)日：2019-05-30

    申请号：US16306560

    申请日：2017-05-30

    申请人： Dimitar Dimitrov

    发明人： Dimitar Dimitrov

    IPC分类号： F23B30/04 ,  F23B60/02 ,  F23H15/00 ,  F24B13/04 ,  F23K3/08 ,  F23L9/02

    摘要： Slag (28) is formed during the combustion of solid fuels with a lower ash fusion temperature and covers parts of the solid fuel, prevents complete combustion and blocks the air supply, thereby leading to an interruption of the combustion process. According to the invention, the embers and the fusing ashes are mixed by means of a cleaning comb (22) and are discharged from the burner. The burner consists of rotating grate bars (25) which are arranged parallel to one another within the inner walls (1). The cleaning comb (22) moves between the grate bars (25); upwards between the grate bars (25); in direction of the burner opening; downwards under the grate bars; and finally in the direction of the burner flange (7). When the slag (28) adheres to the rotating grate bars (25), it is scraped off by the cleaning comb (22). The fuel supplied to a funnel (8) slides downwards by the force of gravity, the funnel lid (9) opens, and the fuel is pushed onto the grate bars (25) by the plunger (11). The plunger (11) has at least one opening (15) for secondary air (5) which also provides cooling. A blower (13) blows the ashes fallen through the grate bars (25) through a cut-out section in the burner floor (30) opened by the floor trap (20).

    Non-volatile memory with stray magnetic field compensation
    6.
    发明授权
    Non-volatile memory with stray magnetic field compensation 有权
    具有杂散磁场补偿的非易失性存储器

    公开(公告)号：US08098541B2

    公开(公告)日：2012-01-17

    申请号：US13084774

    申请日：2011-04-12

    申请人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

    发明人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

    IPC分类号： G11C8/00

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

    摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

    摘要翻译： 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

    Non-volatile memory with stray magnetic field compensation
    8.
    发明授权
    Non-volatile memory with stray magnetic field compensation 有权
    具有杂散磁场补偿的非易失性存储器

    公开(公告)号：US08400867B2

    公开(公告)日：2013-03-19

    申请号：US13316972

    申请日：2011-12-12

    申请人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

    发明人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

    IPC分类号： G11C8/00

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

    摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

    摘要翻译： 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

    NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE
    9.
    发明申请
    NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 有权
    具有可编程电容的非易失性多位存储器

    公开(公告)号：US20090289240A1

    公开(公告)日：2009-11-26

    申请号：US12123685

    申请日：2008-05-20

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar Dimitrov ,  Michael Tang ,  Song Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar Dimitrov ,  Michael Tang ,  Song Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。