公开(公告)号：US07998758B2

公开(公告)日：2011-08-16

申请号：US12389422

申请日：2009-02-20

申请人： Yongchul Ahn ,  Shuiyuan Haung ,  Antoine Khoueir ,  Paul Anderson ,  Lili Jia ,  Christina Laura Hutchinson ,  Ivan Ivanov ,  Dimitar Dimitrov

发明人： Yongchul Ahn ,  Shuiyuan Haung ,  Antoine Khoueir ,  Paul Anderson ,  Lili Jia ,  Christina Laura Hutchinson ,  Ivan Ivanov ,  Dimitar Dimitrov

IPC分类号： H01L29/04 ,  H01L29/82

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.

摘要翻译： 磁性元件和制造磁性元件的方法。 该方法包括图案化第一电极材料以在衬底上形成第一电极，并且在第一电极周围的衬底上沉积填充材料。 该方法还包括抛光以形成填料和第一电极的平坦表面。 磁性电池形成在平面上，第二电极形成在磁性电池上。 在一些实施例中，第一电极具有与磁性电池的面积至少2:1的面积。

公开(公告)号：US20100109107A1

公开(公告)日：2010-05-06

申请号：US12389422

申请日：2009-02-20

申请人： Yongchul Ahn ,  Shuiyuan Huang ,  Antoine Khoueir ,  Paul Anderson ,  Lili Jia ,  Christina Laura Hutchinson ,  Ivan Ivanov ,  Dimitar Dimitrov

发明人： Yongchul Ahn ,  Shuiyuan Huang ,  Antoine Khoueir ,  Paul Anderson ,  Lili Jia ,  Christina Laura Hutchinson ,  Ivan Ivanov ,  Dimitar Dimitrov

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.

摘要翻译： 磁性元件和制造磁性元件的方法。 该方法包括图案化第一电极材料以在衬底上形成第一电极，并且在第一电极周围的衬底上沉积填充材料。 该方法还包括抛光以形成填料和第一电极的平坦表面。 磁性电池形成在平面上，第二电极形成在磁性电池上。 在一些实施例中，第一电极具有与磁性电池的面积至少2:1的面积。

公开(公告)号：US20110005920A1

公开(公告)日：2011-01-13

申请号：US12502139

申请日：2009-07-13

申请人： Ivan Petrov Ivanov ,  Antoine Khoueir ,  Wei Tian ,  Paul E. Anderson ,  Lili Jia ,  Yongchul Ahn ,  Michael Xuefei Tang ,  Yang Dong

发明人： Ivan Petrov Ivanov ,  Antoine Khoueir ,  Wei Tian ,  Paul E. Anderson ,  Lili Jia ,  Yongchul Ahn ,  Michael Xuefei Tang ,  Yang Dong

IPC分类号： C23C14/35

CPC分类号： C23C14/0641 ,  C23C14/354 ,  C23C14/541 ,  H01J37/3408 ,  H01J37/3467

摘要： Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.

摘要翻译： 本发明的各种实施方案通常涉及用于材料的非晶薄膜层的低温物理气相沉积（PVD）的衬底上的装置和方法。 PVD室被配置为支撑衬底并且具有阴极靶，其上具有溅射材料层，阳极屏蔽和与靶相邻的磁控管组件。 高冲击功率磁控溅射（HiPIMS）电源耦合到PVD室，电源具有充电电路和电荷存储装置。 电源对磁控管组件施加相当高的能量，低占空比脉冲，以通过自电离等离子体溅射来自溅射材料层的相对低能量的离子，以将非晶薄膜层沉积到衬底上。

公开(公告)号：US08193089B2

公开(公告)日：2012-06-05

申请号：US12502220

申请日：2009-07-13

申请人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyan Huang ,  Ivan Petrov Ivanov

发明人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyan Huang ,  Ivan Petrov Ivanov

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/76862

摘要： Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.

摘要翻译： 本发明的各种实施例通常涉及在半导体器件中形成导电通孔的方法。 通过使用原子层沉积在凹部内的多个金属阻挡层上沉积钨晶种层而形成的通孔塞电连接第一和第二金属层。 然后使用化学气相沉积用凹槽填充钨。

公开(公告)号：US20120080725A1

公开(公告)日：2012-04-05

申请号：US12894405

申请日：2010-09-30

申请人： Peter Nicholas Manos ,  Young Pil Kim ,  Hyung-Kyu Lee ,  Yongchul Ahn ,  Jinyoung Kim ,  Antoine Khoueir ,  Brian Lee ,  Dadi Setiadi

发明人： Peter Nicholas Manos ,  Young Pil Kim ,  Hyung-Kyu Lee ,  Yongchul Ahn ,  Jinyoung Kim ,  Antoine Khoueir ,  Brian Lee ,  Dadi Setiadi

IPC分类号： H01L27/08 ,  H01L21/02

CPC分类号： H01L27/101 ,  G11C11/16 ,  H01L21/823487 ,  H01L27/228 ,  H01L27/2454 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. An electrically conducting interconnect element is deposited onto at least selected vertical pillar transistors and a non-volatile variable resistive memory cell is deposited onto the electrically conducting interconnect layer to form a vertical transistor memory array.

摘要翻译： 一种方法包括提供具有从半导体晶片正交延伸的多个柱结构的半导体晶片。 导电互连元件沉积在至少选定的垂直柱晶体管上，并且非挥发性可变电阻存储单元沉积在导电互连层上以形成垂直晶体管存储器阵列。

公开(公告)号：US20110007552A1

公开(公告)日：2011-01-13

申请号：US12502224

申请日：2009-07-13

申请人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

发明人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

IPC分类号： G11C11/00 ,  G11C5/14

CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/78 ,  G11C2213/79

摘要： Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level

摘要翻译： 在用于准备用于正常读写操作的单元的RRAM形成过程期间，向电阻随机存取存储器（RRAM）单元提供过电流保护的装置和方法。 根据各种实施例，RRAM单元连接在第一控制线和第二控制线之间，并且主动保护装置（APD）连接在第二控制线和电接地端之间。 通过RRAM单元施加形成电流，并且激活电压同时施加到APD以将形成电流的最大幅度维持在预定阈值水平以下

公开(公告)号：US20120199915A1

公开(公告)日：2012-08-09

申请号：US13446462

申请日：2012-04-13

申请人： Hyung-Kyu Lee ,  YoungPil Kim ,  Peter Nicholas Manos ,  Maroun Khoury ,  Dadi Setiadi ,  Chulmin Jung ,  Hsing-Kuen Liou ,  Paramasiyan Kamatchi Subramanian ,  Yongchul Ahn ,  Jinyoung Kim ,  Antoine Khoueir

发明人： Hyung-Kyu Lee ,  YoungPil Kim ,  Peter Nicholas Manos ,  Maroun Khoury ,  Dadi Setiadi ,  Chulmin Jung ,  Hsing-Kuen Liou ,  Paramasiyan Kamatchi Subramanian ,  Yongchul Ahn ,  Jinyoung Kim ,  Antoine Khoueir

IPC分类号： H01L27/105

CPC分类号： H01L27/101 ,  H01L27/228 ,  H01L27/2454 ,  H01L27/2463 ,  H01L43/08 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1675

摘要： The present invention is generally directed to an apparatus with embedded (bottom side) control lines for vertically stacked semiconductor elements. In accordance with various embodiments, a first semiconductor wafer is provided with a first facing surface on which a first conductive layer is formed. The first semiconductor wafer is attached to a second semiconductor wafer to form a multi-wafer structure, the second semiconductor wafer having a second facing surface on which a second conductive wafer is formed. The first conductive layer is contactingly bonded to the second conductive layer to form an embedded combined conductive layer within said structure. Portions of the combined conductive layer are removed to form a plurality of spaced apart control lines that extend in a selected length or width dimension through said structure.

摘要翻译： 本发明一般涉及用于垂直堆叠的半导体元件的具有嵌入式（底侧）控制线的装置。 根据各种实施例，第一半导体晶片设置有第一面对表面，其上形成有第一导电层。 第一半导体晶片被附接到第二半导体晶片以形成多晶片结构，第二半导体晶片具有形成第二导电晶片的第二相对表面。 所述第一导电层与所述第二导电层接触地接合以在所述结构内形成嵌入的组合导电层。 去除组合导电层的部分以形成多个间隔开的控制线，其以选定的长度或宽度尺寸延伸穿过所述结构。

公开(公告)号：US07965538B2

公开(公告)日：2011-06-21

申请号：US12502224

申请日：2009-07-13

申请人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

发明人： Yongchul Ahn ,  Antoine Khoueir ,  Shuiyuan Huang ,  Peter Nicholas Manos ,  Maroun Khoury

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/78 ,  G11C2213/79

摘要： Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level.

摘要翻译： 在用于准备用于正常读写操作的单元的RRAM形成过程期间，向电阻随机存取存储器（RRAM）单元提供过电流保护的装置和方法。 根据各种实施例，RRAM单元连接在第一控制线和第二控制线之间，并且主动保护装置（APD）连接在第二控制线和电接地端之间。 通过RRAM单元施加形成电流，并且将激活电压同时施加到APD以将形成电流的最大幅度维持在预定阈值水平以下。

公开(公告)号：US20100327248A1

公开(公告)日：2010-12-30

申请号：US12493281

申请日：2009-06-29

申请人： Antoine Khoueir ,  Shuiyuan Huang ,  Andrew Habermas ,  Helena Stadniychuk ,  Ivan P. Ivanov ,  Yongchul Ahn

发明人： Antoine Khoueir ,  Shuiyuan Huang ,  Andrew Habermas ,  Helena Stadniychuk ,  Ivan P. Ivanov ,  Yongchul Ahn

IPC分类号： H01L47/00

CPC分类号： H01L43/12

摘要： A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask being an etch stop for the patterning process, and then patterning the first hard mask to form a reduced first hard mask by using the reduced second hard mask as a mask and using an etch stop layer as an etch stop. After patterning both hard masks, then patterning a functional layer by using the reduced first hard mask as a mask. In the resulting memory cell, the first hard mask layer is also a top lead, and the diameter of the first hard mask layer is at least essentially the same as the diameter of the etch stop layer, the adhesion layer, and the functional layer.

摘要翻译： 通过使用两个硬掩模制造存储器单元或磁性元件的方法。 该方法包括首先构图第二硬掩模以形成还原的第二硬掩模，其中第一硬掩模是用于图案化工艺的蚀刻停止，然后通过使用所述还原的第二硬掩模来形成第一硬掩模以形成减小的第一硬掩模 硬掩模作为掩模，并使用蚀刻停止层作为蚀刻停止。 在图案化两个硬掩模之后，然后通过使用还原的第一硬掩模作为掩模来图案化功能层。 在所得到的存储单元中，第一硬掩模层也是顶部引线，并且第一硬掩模层的直径至少基本上与蚀刻停止层，粘附层和功能层的直径相同。

公开(公告)号：US20100202191A1

公开(公告)日：2010-08-12

申请号：US12370164

申请日：2009-02-12

申请人： Yongchul Ahn ,  Antoine Khoueir ,  Yong Lu ,  Hongyue Liu

发明人： Yongchul Ahn ,  Antoine Khoueir ,  Yong Lu ,  Hongyue Liu

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： G11C14/0081 ,  G11C11/412

摘要： Non-volatile static random access memory (nvSRAM) that has a six transistor static random access memory (6T SRAM) cell electrically connected to a non-volatile random access memory (nvRAM) cell. The nvRAM cell has first and second variable magnetic resistors and first, second and third transistors.

摘要翻译： 具有电连接到非易失性随机存取存储器（nvRAM）单元的六晶体管静态随机存取存储器（6T SRAM）单元的非易失性静态随机存取存储器（nvSRAM）。 nvRAM单元具有第一和第二可变磁阻和第一，第二和第三晶体管。