Epoxy-amine underfill materials for semiconductor packages
    1.
    发明授权
    Epoxy-amine underfill materials for semiconductor packages 有权
    用于半导体封装的环氧胺底层填充材料

    公开(公告)号:US08916981B2

    公开(公告)日:2014-12-23

    申请号:US13891475

    申请日:2013-05-10

    IPC分类号: H01L23/29 H01L25/00

    摘要: Epoxy-amine underfill materials for semiconductor packages and semiconductor packages having an epoxy-amine underfill material are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon. A semiconductor package substrate has a surface with a plurality of contact pads thereon. A plurality of conductive contacts couples the surface of the semiconductor die to the surface of the semiconductor package substrate. An epoxy-amine underfill material is disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounds the plurality of conductive contacts. The epoxy-amine underfill has high adhesion and is based on a low volatility multi-functional amine species.

    摘要翻译: 描述了具有环氧 - 胺底部填充材料的半导体封装和半导体封装的环氧胺底部填充材料。 在一个示例中,半导体装置包括其上具有集成电路的表面的半导体管芯。 半导体封装衬底具有其上具有多个接触焊盘的表面。 多个导电触头将半导体管芯的表面耦合到半导体封装衬底的表面。 环氧胺底部填充材料设置在半导体管芯的表面和半导体封装衬底的表面之间并且围绕多个导电触点。 环氧胺底部填充剂具有高粘合性,并且基于低挥发性多官能胺物质。

    EPOXY-AMINE UNDERFILL MATERIALS FOR SEMICONDUCTOR PACKAGES
    2.
    发明申请
    EPOXY-AMINE UNDERFILL MATERIALS FOR SEMICONDUCTOR PACKAGES 有权
    环氧胺基材料半导体封装

    公开(公告)号:US20140332966A1

    公开(公告)日:2014-11-13

    申请号:US13891475

    申请日:2013-05-10

    IPC分类号: H01L23/29 H01L25/00

    摘要: Epoxy-amine underfill materials for semiconductor packages and semiconductor packages having an epoxy-amine underfill material are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon. A semiconductor package substrate has a surface with a plurality of contact pads thereon. A plurality of conductive contacts couples the surface of the semiconductor die to the surface of the semiconductor package substrate. An epoxy-amine underfill material is disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounds the plurality of conductive contacts. The epoxy-amine underfill has high adhesion and is based on a low volatility multi-functional amine species.

    摘要翻译: 描述了具有环氧 - 胺底部填充材料的半导体封装和半导体封装的环氧胺底部填充材料。 在一个示例中,半导体装置包括其上具有集成电路的表面的半导体管芯。 半导体封装衬底具有其上具有多个接触焊盘的表面。 多个导电触点将半导体管芯的表面耦合到半导体封装衬底的表面。 环氧胺底部填充材料设置在半导体管芯的表面和半导体封装衬底的表面之间并且围绕多个导电触点。 环氧胺底部填充剂具有高粘合性,并且基于低挥发性多官能胺物质。

    Methods and systems for metal-assisted chemical etching of substrates
    8.
    发明授权
    Methods and systems for metal-assisted chemical etching of substrates 有权
    金属辅助化学蚀刻基板的方法和系统

    公开(公告)号:US08278191B2

    公开(公告)日:2012-10-02

    申请号:US12751080

    申请日:2010-03-31

    IPC分类号: H01L21/00

    摘要: Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for metal-assisted chemical etching includes providing a substrate; depositing a non-spherical metal catalyst on a surface of the substrate; etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and removing the etched substrate from the etchant solution.

    摘要翻译: 本文公开了与微米,亚微米和纳米尺度上的基底的金属辅助化学蚀刻相关的各种实施方案。 在一个实施方案中,除其他之外,金属辅助化学蚀刻的方法包括提供基材; 在基板的表面上沉积非球形金属催化剂; 通过将非球形金属催化剂和衬底暴露于包括氟化物蚀刻剂和氧化剂的组合物的蚀刻剂溶液来蚀刻该衬底; 并从蚀刻液中去除蚀刻的衬底。

    Metal-Assisted Chemical Etching of Substrates
    9.
    发明申请
    Metal-Assisted Chemical Etching of Substrates 有权
    金属辅助化学蚀刻基材

    公开(公告)号:US20100248449A1

    公开(公告)日:2010-09-30

    申请号:US12751080

    申请日:2010-03-31

    IPC分类号: H01L21/306

    摘要: Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for metal-assisted chemical etching includes providing a substrate; depositing a non-spherical metal catalyst on a surface of the substrate; etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and removing the etched substrate from the etchant solution.

    摘要翻译: 本文公开了与微米,亚微米和纳米尺度上的基底的金属辅助化学蚀刻相关的各种实施方案。 在一个实施方案中,除其他之外,金属辅助化学蚀刻的方法包括提供基材; 在基板的表面上沉积非球形金属催化剂; 通过将非球形金属催化剂和衬底暴露于包括氟化物蚀刻剂和氧化剂的组合物的蚀刻剂溶液来蚀刻该衬底; 并从蚀刻液中去除蚀刻的衬底。