公开(公告)号：US4840491A

公开(公告)日：1989-06-20

申请号：US89803

申请日：1987-08-27

申请人： Yoshiaki Hagiwara ,  Hiromi Ishida ,  Takeyoshi Takahashi

发明人： Yoshiaki Hagiwara ,  Hiromi Ishida ,  Takeyoshi Takahashi

IPC分类号： B29B7/56 ,  B29B13/06 ,  B29C43/24 ,  B29K19/00

CPC分类号： B29B7/568 ,  B29B13/06 ,  B29B7/005 ,  B29B7/566 ,  B29B7/7495

摘要： In a method of kneading rubber, rubber is kneaded with a kneading mixer, and the rubber thus kneaded is caused to pass through roll means to form a rubber sheet whose thickness is not more than 3 mm, whereby the rubber having a desired degree of plasticity can be obtained by using the kneading mixer only once.

摘要翻译： 在捏合橡胶的方法中，将橡胶与捏合混合器捏合，使由此捏合的橡胶通过辊装置形成厚度不大于3mm的橡胶片，由此具有所需塑性程度的橡胶 可以通过使用捏合混合器仅获得一次。

公开(公告)号：US4242692A

公开(公告)日：1980-12-30

申请号：US44224

申请日：1979-05-31

申请人： Yoshiaki Hagiwara

发明人： Yoshiaki Hagiwara

IPC分类号： G11C19/18 ,  G11C19/28 ,  H01L29/10 ,  H01L29/768 ,  H01L29/78

CPC分类号： G11C19/186 ,  G11C19/282 ,  H01L29/1058 ,  H01L29/76875

摘要： The present invention relates to a charge transfer device which allows change of the charge transfer direction wherein transfer portions are formed of generally rectangular shape which have a length in the charge transfer direction which gradually gets longer to the transition direction change area and widths which get smaller relative to the direction transverse to the charge transfer direction. The length times width of the transfer portions is made substantially constant. The feature providing that the transfer regions become narrower as they approach the portion of charge direction change allows the charge direction change to be relatively shorter than apparatus of the prior art thus resulting in greater efficiency, shorter charge transfer time, eliminates the requirement for direct current bias and a more integrated device is provided.

摘要翻译： 电荷转移装置技术领域本发明涉及一种电荷转移装置，其能够改变电荷转移方向，其中转印部分形成为大致矩形形状，其具有在电荷转移方向上的长度，其逐渐变得更长于过渡方向变化区域，并且宽度变小 相对于横向于电荷转移方向的方向。 转印部分的长度乘以宽度大致恒定。 当传递区域接近电荷方向变化部分时，传输区域变窄的特征允许电荷方向改变比现有技术的设备相对更短，从而导致更高的效率，更短的电荷转移时间，消除了对直流电的要求 偏置和更集成的器件。

公开(公告)号：US06583490B2

公开(公告)日：2003-06-24

申请号：US09888534

申请日：2001-06-26

申请人： Yoshiaki Hagiwara ,  Hideaki Kuroda ,  Michitaka Kubota ,  Akira Nakagawara

发明人： Yoshiaki Hagiwara ,  Hideaki Kuroda ,  Michitaka Kubota ,  Akira Nakagawara

IPC分类号： H01L2900

CPC分类号： G11C17/16 ,  G11C2213/33 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/112 ,  H01L2224/48091 ,  H01L2225/06568 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

公开(公告)号：US6157610A

公开(公告)日：2000-12-05

申请号：US353

申请日：1998-07-14

申请人： Yoshiaki Hagiwara

发明人： Yoshiaki Hagiwara

IPC分类号： G01Q30/04 ,  G11B9/08 ,  G11B9/10 ,  G11B11/08 ,  G11B23/00 ,  G11B23/03 ,  G11B33/14 ,  G11B3/70 ,  G11B9/00

CPC分类号： G11B23/0021 ,  G11B11/08 ,  G11B23/0316 ,  G11B9/08 ,  G11B9/10 ,  G11B33/14

摘要： A disk 1 comprised by a substrate 11, a signal layer 12 made of aluminum in which pits 14 are formed, and a protective plate 13. The information reproducing apparatus emits an electron beam E from an electron gun 40 to the signal layer 12 of the disk 1, detects a change of the incident intensity of the reflection thereof via a detector 42, and reproduces the information of the disk 1 by a reproducing circuit 5. A recording medium 20 comprised by a conductive layer 22, an insulating layer 23, and island-like fixed electrodes 24 thereon electrically insulated from the periphery with a memory function imparted to the fixed electrodes. For the writing, electrons are injected into the fixed electrodes by the electron gun. For full erasure, a voltage is applied to the conductive layer 22. For the reading, the electrostatic effect of the counter electrodes and the fixed electrodes is utilized. This enables an increase of the volume of information and an enhancement of precision of the reading of the information.

摘要翻译： PCT No.PCT / JP96 / 02017 Sec。 371日期：1998年7月14日 102（e）1998年7月14日PCT PCT 1996年7月19日PCT公布。 公开号WO97 / 04452 日期1997年2月6日由基板11构成的盘1，由铝构成的信号层12，其中形成有凹坑14，保护板13.信息再现装置从电子枪40发射电子束E 盘1的信号层12经由检测器42检测其反射的入射强度的变化，并通过再现电路5再现盘1的信息。由导电层22， 绝缘层23和岛状固定电极24与周围电绝缘，具有赋予固定电极的记忆功能。 对于写入，电子通过电子枪注入固定电极。 为了完全擦除，向导电层22施加电压。为了读取，利用了相对电极和固定电极的静电效应。 这样可以增加信息量，提高信息读取的精度。

公开(公告)号：US4851887A

公开(公告)日：1989-07-25

申请号：US143651

申请日：1988-01-13

申请人： Yoshiaki Hagiwara

发明人： Yoshiaki Hagiwara

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L27/14887

摘要： A solid state imager device having a charge accumulating region of a second conductivity type formed on the surface side of a semiconductor substrate of a first conductivity type which has a charge accumulating region of the second conductivity type laminated on the charge accumulating region, the second conductivity type region and the charge accumulating region forming a charge accumulating section, and a first conductivity type region formed on the surface of and/or on the side of the second conductivity type region, wherein if an excessive signal charge is produced in the charge accumulating section, the excessive signal charge is absorbed in the first conductivity type region, whereby brooming can be satisfactorily suppressed and higher integration of the device can be achieved.

公开(公告)号：US06800527B2

公开(公告)日：2004-10-05

申请号：US10366564

申请日：2003-02-14

申请人： Yoshiaki Hagiwara ,  Hideaki Kuroda ,  Michitaka Kubota ,  Akira Nakagawara

发明人： Yoshiaki Hagiwara ,  Hideaki Kuroda ,  Michitaka Kubota ,  Akira Nakagawara

IPC分类号： H01L218236

CPC分类号： G11C17/16 ,  G11C2213/33 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/112 ,  H01L2224/48091 ,  H01L2225/06568 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

摘要翻译： 一种提高氧化硅膜的绝缘破坏的再现性和可靠性的能够降低制造成本的半导体非易失性存储器件及其制造方法，其中以矩阵形式布置的每个存储单元具有绝缘膜破损型 保险丝，其包括形成在半导体衬底上的第一导电类型的杂质区，形成在所述半导体衬底上的第一绝缘膜，同时覆盖所述杂质区;形成在所述第一绝缘膜中的开口以到达所述杂质区;以及第一绝缘膜 第一导电类型的半导体层，第二绝缘膜和第二导电类型的第二半导体层，其从杂质区侧连续地堆叠在开口中，或者具有包含第一导电性的杂质区的绝缘膜断裂型熔丝 键入具有SOI结构的第一半导体层，第一绝缘膜 在SOI层上，到达杂质区的开口，以及层叠在开口中的第二绝缘膜和第二导电类型的第二半导体层。

公开(公告)号：USRE30917E

公开(公告)日：1982-04-27

申请号：US104270

申请日：1979-12-17

申请人： Yoshiaki Hagiwara ,  Hiroshi Yamazaki

发明人： Yoshiaki Hagiwara ,  Hiroshi Yamazaki

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/06 ,  H01L29/10 ,  H01L29/762 ,  H01L29/768 ,  H04N5/335 ,  H04N5/341 ,  H04N5/3728

CPC分类号： H01L29/76866 ,  H01L27/14831 ,  H01L29/0646 ,  H01L29/1062

摘要： A charge coupled device capable of operating with two phase clock pulses wherein asymmetrical potential wells are established by the use of channel stoppers which are formed on opposite edges of the charge coupled device and which have restricted portions through which the charges can flow from one storage area to the other.The invention also comprises an information storage device including an array of photosensors with certain photosensors coupled to a particular charge transfer device according to the invention wherein channel stoppers with restricted passages are formed so as to provide asymmetrical charge transfer between the photosensors and various elements of the charge transfer device.

公开(公告)号：US4179793A

公开(公告)日：1979-12-25

申请号：US841551

申请日：1977-10-12

申请人： Yoshiaki Hagiwara

发明人： Yoshiaki Hagiwara

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H01L29/10 ,  H01L29/768 ,  B01J17/00

CPC分类号： H01L29/66954 ,  H01L29/1062 ,  H01L29/76875

摘要： A method of making a charge transfer device which has charge transfer portions arranged in a semiconductor substrate, each of said charge transfer portions having electrodes, and in which an effective asymmetrical potential is produced in each of the charge transfer portions in a carrier transfer direction by the affect of the potential of channel stopper regions upon charge transfer. The method has the steps of forming channel stopper regions, which define a charge transfer line, in the substrate, forming a first polycrystalline semiconductor layer which becomes a first gate electrode of every second charge transfer portion, forming a second polycrystalline semiconductor layer which becomes a second gate electrode of the other of every second charge transfer portion, and forming a portion which is extended from at least the channel stopper region and produces the asymmetrical potential, by selectively doping an impurity into the substrate with the first and second polycrystalline semiconductor layers as a doping mask.

摘要翻译： 一种制造电荷转移装置的方法，该电荷转移装置具有布置在半导体衬底中的电荷转移部分，每个所述电荷转移部分都具有电极，并且其中每个电荷转移部分在载流子传输方向上产生有效的非对称电位， 通道阻挡区电位对电荷转移的影响。 该方法具有以下步骤：在衬底中形成限定电荷转移线的通道阻挡区域，形成第一多晶半导体层，该第一多晶半导体层成为每第二电荷转移部分的第一栅电极，形成第二多晶半导体层， 每个第二电荷转移部分中的另一个的第二栅电极，并且通过用第一和第二多晶半导体层选择性地将杂质掺杂到衬底中，形成从至少沟道阻挡区延伸的部分并产生不对称电位， 掺杂掩模

公开(公告)号：US4133099A

公开(公告)日：1979-01-09

申请号：US821183

申请日：1977-08-02

申请人： Yoshiaki Hagiwara

发明人： Yoshiaki Hagiwara

IPC分类号： H01L21/76 ,  H01L21/033 ,  H01L21/339 ,  H01L21/8234 ,  H01L27/148 ,  H01L29/10 ,  H01L29/762 ,  B01J17/00

CPC分类号： H01L29/66954 ,  H01L21/033 ,  H01L21/823406 ,  H01L29/1062

摘要： A method of manufacturing charge transfer devices in which an asymmetrical potential well in the direction of charge transfer is formed by the shape of narrower portions of a transfer channel which is bordered by highly doped channel stoppers. Impurities are diffused through a first mask into a polycrystalline silicon layer on the surface of a semiconductor substrate to construct transfer electrodes of highly doped polycrystalline layer. Then impurities are diffused into a semiconductor substrate through openings bordering on one edge with a first mask to form the highly doped portions to make the narrower portions of the transfer channel to assure that the edges of the transfer electrode and the edge of the narrower portion are aligned.

摘要翻译： 一种制造电荷转移装置的方法，其中电荷转移方向上的非对称势阱通过由高掺杂通道阻挡物界定的转移通道的较窄部分的形状形成。 杂质通过第一掩模扩散到半导体衬底的表面上的多晶硅层中以构成高掺杂多晶层的转移电极。 然后杂质通过与一个边缘邻接的开口与第一掩模扩散到半导体衬底中，以形成高掺杂部分，以形成传输沟道的较窄部分，以确保转移电极的边缘和较窄部分的边缘为 对齐

公开(公告)号：US06697317B2

公开(公告)日：2004-02-24

申请号：US10260345

申请日：2002-10-01

申请人： Yoshiaki Hagiwara

发明人： Yoshiaki Hagiwara

IPC分类号： G11B700

CPC分类号： G11B23/0021 ,  G11B9/08 ,  G11B9/10 ,  G11B11/08 ,  G11B23/0316 ,  G11B33/14

摘要： A disk 1 comprised by a substrate 11, a signal layer 12 made of aluminum in which pits 14 are formed, and a protective plate 13. The information reproducing apparatus emits an electron beam E from an electron gun 40 to the signal layer 12 of the disk 1, detects a change of the incident intensity of the reflection thereof via a detector 42, and reproduces the information of the disk 1 by a reproducing circuit 5. A recording medium 20 comprised by a conductive layer 22, an insulating layer 23, and island-like fixed electrodes 24 thereon electrically insulated from the periphery with a memory function imparted to the fixed electrodes. For the writing, electrons are injected into the fixed electrodes by the electron gun. For full erasure, a voltage is applied to the conductive layer 22. For the reading, the electrostatic effect of the counter electrodes and the fixed electrodes is utilized. This enables an increase of the volume of information and an enhancement of precision of the reading of the information.

摘要翻译： 由基板11构成的盘1，由铝形成的信号层12，其中形成有凹坑14的信号层12以及保护板13.信息再现装置将电子束E从电子枪40发射到信号层12的信号层12。 盘1通过检测器42检测其反射的入射强度的变化，并通过再现电路5再现光盘1的信息。由导电层22，绝缘层23和 岛状固定电极24与周边电绝缘，具有赋予固定电极的记忆功能。 对于写入，电子通过电子枪注入固定电极。 为了完全擦除，向导电层22施加电压。为了读取，利用了相对电极和固定电极的静电效应。 这样可以增加信息量，提高信息读取的精度。