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1.发明授权公开(公告)号：US07959821B2
公开(公告)日：2011-06-14
申请号：US11980450
申请日：2007-10-31
申请人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
发明人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
CPC分类号： H05K9/0075
摘要： An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.
摘要翻译： 电磁抑制材料具有增加的电磁抑制效果，可以灵活地形成各种形状，并且便宜。 电磁抑制装置使用电磁抑制材料，电子设备使用电磁抑制材料或电磁抑制装置。 电磁抑制材料是具有电极性的液体材料和/或凝胶材料。
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2.发明申请Electromagnetism suppressing material, electromagnetism suppressing device, and electronic appliance 审中-公开电磁抑制材料，电磁抑制装置和电子设备公开(公告)号：US20060045543A1
公开(公告)日：2006-03-02
申请号：US11185879
申请日：2005-07-21
申请人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
发明人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
IPC分类号： G03G15/00
CPC分类号： H05K9/0075
摘要： An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.
摘要翻译： 电磁抑制材料具有增加的电磁抑制效果，可以灵活地形成各种形状，并且便宜。 电磁抑制装置使用电磁抑制材料，电子设备使用电磁抑制材料或电磁抑制装置。 电磁抑制材料是具有电极性的液体材料和/或凝胶材料。
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3.发明申请公开(公告)号：US20080067467A1
公开(公告)日：2008-03-20
申请号：US11980450
申请日：2007-10-31
申请人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
发明人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
IPC分类号： H01F1/00
CPC分类号： H05K9/0075
摘要： An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.
摘要翻译： 电磁抑制材料具有增加的电磁抑制效果，可以灵活地形成各种形状，并且便宜。 电磁抑制装置使用电磁抑制材料，电子设备使用电磁抑制材料或电磁抑制装置。 电磁抑制材料是具有电极性的液体材料和/或凝胶材料。
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4.发明申请公开(公告)号：US20050230788A1
公开(公告)日：2005-10-20
申请号：US11053650
申请日：2005-02-08
IPC分类号： H01L23/00 , G11C11/16 , H01L21/8246 , H01L23/552 , H01L27/105
CPC分类号： H01L23/552 , G11C11/16 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.
摘要翻译： 本发明的目的是松弛磁饱和，实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器（MRAM），其中磁性随机存取存储器（MRAM）由通过堆积固定磁化方向的磁化固定层形成的TMR元件和磁性层组成，其中， 磁化方向可以改变，通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状，其中，基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交，特别是圆形，多边形等，从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。
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5.发明授权公开(公告)号：US07459769B2
公开(公告)日：2008-12-02
申请号：US11053650
申请日：2005-02-08
CPC分类号： H01L23/552 , G11C11/16 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.
摘要翻译： 本发明的目的是松弛磁饱和，实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器（MRAM），其中磁性随机存取存储器（MRAM）由通过将磁化固定层与磁化方向固定而形成的TMR元件和磁性层组成，其中， 磁化方向可以改变，通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状，其中，基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交，特别是圆形，多边形等，从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。
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公开(公告)号：US20080197434A1
公开(公告)日：2008-08-21
申请号：US12101607
申请日：2008-04-11
IPC分类号： H01L23/552 , H01L29/82
CPC分类号： H01L23/49575 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes: a substrate; a magnetic random access memory mounted on the substrate, the magnetic random access memory including a memory element having a magnetized pinned layer with fixed direction of magnetization and a magnetic layer with changeable direction of magnetization stacked on one another; another element mounted on the substrate; and a pair of magnetic shielding layers which magnetically shield the memory element, the magnetic shielding layers located relatively above and below the memory element and within a region corresponding to an area occupied by the memory element.
摘要翻译： 一种磁存储器件，其中MRAM元件与大的外部磁场磁屏蔽。 磁存储器件包括：基片; 安装在基板上的磁性随机存取存储器，所述磁性随机存取存储器包括具有固定磁化方向的磁化钉扎层和具有可变方向磁化的磁性层彼此叠置的存储元件; 安装在基板上的另一元件; 以及一对磁屏蔽层，其对存储元件进行磁屏蔽，磁屏蔽层位于相对于存储元件的上方和下方并且在对应于存储元件所占据的区域的区域内。
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7.发明授权公开(公告)号：US06992155B2
公开(公告)日：2006-01-31
申请号：US10245046
申请日：2002-09-17
CPC分类号： B82Y30/00 , B22F1/0018 , B22F1/0059 , B22F9/24 , B22F9/305 , B22F2998/00 , B82Y25/00 , B82Y40/00 , C22C32/0094 , H01F1/0054 , H01F41/30 , H01F41/301 , Y10S977/777 , Y10S977/783 , Y10T428/12146 , Y10T428/254 , Y10T428/256 , Y10T428/257 , Y10T428/29 , Y10T428/2991 , Y10T428/2998 , B22F3/02
摘要： A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.
摘要翻译： 形成用于吸收电磁波的磁性材料的磁性颗粒的制造方法包括将有机金属络合物或金属盐与链状聚合物混合并将该混合物溶解在溶剂中的步骤（步骤S1）。 将混合物的温度升至反应温度（步骤S2），在反应温度下进行反应（步骤S3）; 并形成具有由有机金属配合物或金属盐形成的各微细颗粒的周围被链状聚合物包围并在反应后回收形成的磁性颗粒的结构的磁性颗粒（步骤S4）。 磁性颗粒具有纳米结构，成为吸收电磁波的磁性材料。 这样的磁性颗粒是通过湿反应产生的。 因此，通过一次反应可以产生更大量的磁性颗粒。
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8.发明授权Polymer-coated magnetic particle and magnetic material for absorbing electromagnetic waves 有权用于吸收电磁波的聚合物涂覆磁性颗粒和磁性材料公开(公告)号：US07745004B2
公开(公告)日：2010-06-29
申请号：US11258569
申请日：2005-10-25
IPC分类号： B32B5/16
CPC分类号： B82Y30/00 , B22F1/0018 , B22F1/0059 , B22F9/24 , B22F9/305 , B22F2998/00 , B82Y25/00 , B82Y40/00 , C22C32/0094 , H01F1/0054 , H01F41/30 , H01F41/301 , Y10S977/777 , Y10S977/783 , Y10T428/12146 , Y10T428/254 , Y10T428/256 , Y10T428/257 , Y10T428/29 , Y10T428/2991 , Y10T428/2998 , B22F3/02
摘要： A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.
摘要翻译： 一种形成用于吸收电磁波的磁性材料的磁性颗粒的制造方法包括将有机金属络合物或金属盐与链状聚合物混合并将该混合物溶解在溶剂中的步骤（步骤S1）。 将混合物的温度升至反应温度（步骤S2），在反应温度下进行反应（步骤S3）; 并形成具有由有机金属配合物或金属盐形成的各微细颗粒的周围被链状聚合物包围并在反应后回收形成的磁性颗粒的结构的磁性颗粒（步骤S4）。 磁性颗粒具有纳米结构，成为吸收电磁波的磁性材料。 这样的磁性颗粒是通过湿反应产生的。 因此，通过一次反应可以产生更大量的磁性颗粒。
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公开(公告)号：US20050116255A1
公开(公告)日：2005-06-02
申请号：US10506752
申请日：2003-12-19
IPC分类号： H01L23/00 , H01L21/8246 , H01L23/552 , H01L27/105 , H01L27/22 , H01L43/08 , H01L31/109
CPC分类号： H01L27/222 , B82Y10/00 , H01L23/552 , H01L2224/16 , H01L2924/01004 , H01L2924/01019 , H01L2924/01025 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/3025 , H01L2924/00
摘要： A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements 30 which are shielded by magnetic shield layers 33, 34 are placed at an intermediate region 41 avoiding an edge region 43 and a center region 42 of the magnetic shield layers 33, 34 so that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge region 43 where the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central region 42 where the internal leakage magnetic field is large
摘要翻译： 提出了一种存储器件，其能够保证MRAM元件的操作不被大的外部磁场屏蔽，而不受内部泄漏磁场的影响。 由磁屏蔽层33,34屏蔽的MRAM元件30被放置在中间区域41处，避免了磁屏蔽层33,34的边缘区域43和中心区域42，使得MRAM元件被固定以正常地操作而没有 受到内部泄漏磁场的影响，避免了由外部磁场减小磁屏蔽效应的边缘区域43，并且避免了内部泄漏磁场较大的中心区域42
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公开(公告)号：US07119419B2
公开(公告)日：2006-10-10
申请号：US10506752
申请日：2003-12-19
IPC分类号： H01L23/552
CPC分类号： H01L27/222 , B82Y10/00 , H01L23/552 , H01L2224/16 , H01L2924/01004 , H01L2924/01019 , H01L2924/01025 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/3025 , H01L2924/00
摘要： A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements 30 which are shielded by magnetic shield layers 33, 34 are placed at an intermediate region 41 avoiding an edge region 43 and a center region 42 of the magnetic shield layers 33, 34 so that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge region 43 where the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central region 42 where the internal leakage magnetic field is large.
摘要翻译： 提出了一种存储器件，其能够保证MRAM元件的操作不被大的外部磁场屏蔽，而不受内部泄漏磁场的影响。 由磁屏蔽层33,34屏蔽的MRAM元件30被放置在中间区域41处，避免了磁屏蔽层33,34的边缘区域43和中心区域42，使得MRAM元件被固定以正常地操作而没有 受到内部泄漏磁场的影响，避免了由外部磁场减小磁屏蔽效应的边缘区域43，并且避免了内部泄漏磁场较大的中心区域42。
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