公开(公告)号：US5952714A

公开(公告)日：1999-09-14

申请号：US809845

申请日：1997-06-16

申请人： Yoshikazu Sano ,  Sumio Terakawa ,  Eiichi Tsujii ,  Masaji Asaumi ,  Yoshikazu Chatani

发明人： Yoshikazu Sano ,  Sumio Terakawa ,  Eiichi Tsujii ,  Masaji Asaumi ,  Yoshikazu Chatani

IPC分类号： H01L27/148 ,  H01L31/02 ,  H01L31/0203 ,  H01L23/02 ,  H01L23/34 ,  H01L23/48

CPC分类号： H01L31/02002 ,  H01L27/14618 ,  H01L27/148 ,  H01L31/0203 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1815

摘要： A lead frame 24 comprising an inner lead 22 and outer lead 23 is sealingly filled from a through-hole into a package 21. A CCD chip 27 is inserted from an inlet 26 into the package 21. An electrode pad 28 is connected to the inner lead 22 via a bump 29 to complete an optical positioning and an electrical connection, then the positions of these components are fixed by glue. As a result, a solid-state image sensing apparatus can be manufactured at a low cost, and an accurate positioning can be realized. Thus, the solid-state image sensing apparatus can be employed to a video camera of high quality picture to reproduce vivid colors and fine pictures.

摘要翻译： PCT No.PCT / JP96 / 02142 Sec。 371日期：1997年6月16日 102（e）日期1996年6月16日PCT提交1996年7月30日PCT公布。 出版物WO97 / 05660 日期1997年2月13日包括内引线22和外引线23的引线框架24从通孔密封地填充到封装21中。CCD芯片27从入口26插入封装21中。电极焊盘28 通过凸块29连接到内引线22，以完成光学定位和电连接，然后这些部件的位置通过胶固定。 结果，可以以低成本制造固态图像感测装置，并且可以实现精确的定位。 因此，可以将固态图像感测装置用于高质量图像的摄像机，以再现生动的颜色和精细的图像。

公开(公告)号：US06606198B2

公开(公告)日：2003-08-12

申请号：US09817772

申请日：2001-03-26

申请人： Tomohiko Sasano ,  Yasuhiro Tanaka ,  Michihiro Yamagata ,  Yoshikazu Sano ,  Tomoko Komatsu ,  Michiyo Ichikawa ,  Sumio Terakawa ,  Hiromitu Aoki

发明人： Tomohiko Sasano ,  Yasuhiro Tanaka ,  Michihiro Yamagata ,  Yoshikazu Sano ,  Tomoko Komatsu ,  Michiyo Ichikawa ,  Sumio Terakawa ,  Hiromitu Aoki

IPC分类号： G02B2710

CPC分类号： G02B3/0018 ,  G02B3/0056 ,  H01L27/14627 ,  H01L27/14685

摘要： In a lens array, a multiplicity of condenser lenses, each in a convex lens form, are arrayed in vertical and horizontal directions so as to correspond to pixel regions, respectively, and each condenser lens, when viewed from a direction perpendicular to a condenser lens-arrayed plane, takes a planar shape formed with a four straight sides along four sides of the pixel region and four circular arcs extending between the respective straight sides. A center of the four circular arcs substantially coincides with a center of the corresponding pixel region. This ensures an increase in area covered with the condenser lens in the pixel region, thereby causing more light rays to enter the condenser lens. In addition, a radius of curvature necessary for collecting can be obtained more easily. Consequently, light rays can be efficiently collected and guided to light receiving sections or the like provided in the pixel regions. Accordingly, sensitivity is improved when such a lens array is used in a solid-state imaging element, while luminance of a screen is improved when it is used in a panel display element. Besides, such a lens array is easily manufactured.

摘要翻译： 在透镜阵列中，分别以凸透镜形式的多个聚光透镜分别沿着垂直于聚光透镜的方向从垂直方向排列成与像素区对应的聚焦透镜，并且每个聚光透镜 在平面形状的四边形状的四边形状的平面形状，四个圆弧在各个直边之间延伸。 四个圆弧的中心基本上与相应像素区域的中心重合。 这确保了像素区域中的聚光透镜覆盖的面积的增加，从而导致更多的光线进入聚光透镜。 此外，可以更容易地获得收集所需的曲率半径。 因此，可以将光线有效地收集并引导到设置在像素区域中的受光部等。 因此，当在固态成像元件中使用这种透镜阵列时，在面板显示元件中使用屏幕的亮度时，提高了灵敏度。 此外，这种透镜阵列容易制造。

公开(公告)号：US20080042227A1

公开(公告)日：2008-02-21

申请号：US11813242

申请日：2005-12-27

申请人： Osamu Asano ,  Hitoo Iwasa ,  Sumio Terakawa ,  Masami Shouji

发明人： Osamu Asano ,  Hitoo Iwasa ,  Sumio Terakawa ,  Masami Shouji

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0203 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/13 ,  H04N5/2253

摘要： There are provided image pickup devices capable of significantly increasing production yield and ensuring long-term reliability and a method for manufacturing the image pickup devices. This invention is characterized in that it has a large number of light-receiving portions 2 formed at a surface portion of a wafer 1 and a microlens 3 formed for each of the light-receiving portions, through electrodes 4 for performing supply of power to the light-receiving portions 2 and passing and reception of an electrical signal are provided all over the periphery of the wafer 1, one end of each through electrode 4 is connected to an electrode pad 4a which is connected to a wire leading to a light-receiving element at the surface portion of the wafer 1, the other end is connected to a wire through a back electrode 5, a rib 7 which serves as a partition portion arranged to surround the microlenses 3 on four sides is provided on the surface of the wafer 1, a transparent plate 8 of optical glass or the like is bonded to an upper surface of the rib 7 with adhesive, and a protective frame 10 is provided at a junction between the rib 7 and the transparent plate 8.

摘要翻译： 提供能够显着提高产量并确保长期可靠性的图像拾取装置以及用于制造图像拾取装置的方法。 本发明的特征在于，具有大量的在晶片1的表面部分形成的光接收部分2和为每个光接收部分形成的微透镜3，通过用于向 光接收部分2和电信号的通过和接收被提供在晶片1的整个周边，每个贯通电极4的一端连接到电极焊盘4a，电极焊盘4a连接到导线上的导线， 在晶片1的表面部分接收元件，另一端通过背面电极5与导线连接，在四周的表面上设置有用作围绕微透镜3的分隔部分的肋7 晶片1，光学玻璃等的透明板8用粘合剂结合到肋7的上表面，并且在肋7和透明板8之间的接合处设置保护框架10。

公开(公告)号：US5223726A

公开(公告)日：1993-06-29

申请号：US821286

申请日：1992-01-10

申请人： Takahiro Yamada ,  Sumio Terakawa

发明人： Takahiro Yamada ,  Sumio Terakawa

IPC分类号： H01L27/148

CPC分类号： H01L27/14831

摘要： In a CCD device, a plurality of trench holes are formed in high resistivity semiconductor layer and juxtaposed in a charge transfer direction, and charge transfer electrodes are buried in the trench holes. Charge transfer regions are formed in the semiconductor layer around the vicinity of the respective trench holes during a main operating state.

摘要翻译： 在CCD器件中，多个沟槽形成在高电阻率半导体层中，并且在电荷传输方向上并置，电荷转移电极被埋在沟槽中。 在主操作状态期间，在各沟槽孔附近的半导体层中形成电荷转移区域。

公开(公告)号：US20100133596A1

公开(公告)日：2010-06-03

申请号：US12595200

申请日：2008-04-16

申请人： Sumio Terakawa

发明人： Sumio Terakawa

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603

摘要： A solid-state imaging device includes pixels arranged in a matrix on a semiconductor substrate, the pixels each including: a photodiode for photoelectric-converting an incident light beam; a readout transistor for reading out a signal charge from the photodiode; and a floating diffusion region for converting the read out signal charge into a voltage, wherein the semiconductor substrate is of an n-type, a first p-type well is provided below an n-type forming layer of the photodiode so as to be located at a distant position from a surface of the n-type substrate at the photodiode side, and partially or entirely below the readout transistor, the first p-type well is formed so as to reach the surface of the semiconductor substrate.

摘要翻译： 固态成像装置包括以矩阵形式布置在半导体衬底上的像素，每个像素包括：用于光电转换入射光束的光电二极管; 用于从光电二极管读出信号电荷的读出晶体管; 以及用于将读出的信号电荷转换为电压的浮动扩散区域，其中半导体衬底为n型，在光电二极管的n型形成层的下方设置第一p型阱，以便位于 在距离光电二极管一侧的n型衬底的表面远的位置处，并且部分或全部在读出晶体管的下方形成第一p型阱以到达半导体衬底的表面。

公开(公告)号：US20060290797A1

公开(公告)日：2006-12-28

申请号：US11473138

申请日：2006-06-23

申请人： Hiromichi Tanaka ,  Hideto Yoshimura ,  Sumio Terakawa ,  Masafumi Kimata

发明人： Hiromichi Tanaka ,  Hideto Yoshimura ,  Sumio Terakawa ,  Masafumi Kimata

IPC分类号： H04N5/335

CPC分类号： H04N5/2353 ,  H04N5/2351

摘要： A solid state imaging device detects the period of energy variation of discharge type illumination, and sets a total exposure time to match the detected period. The total exposure time is divided into alternating valid and invalid exposure times by a division ratio to make the sum of the valid exposure times equal to an actual exposure time corresponding to an actual speed of an electronic shutter. Charges accumulated in a CMOS sensor during the valid exposure times are stored in a floating diffusion, whereas charges accumulated during the invalid exposure times are drained. At the end of the total exposure time, the charges stored during the valid exposure times are converted to an electrical signal which is output to a signal processing circuit. This device can correct variation of output signals which corresponds to the illumination energy variation when the shutter is operated for imaging under high luminance illumination.

摘要翻译： 固态成像装置检测放电型照明的能量变化的周期，并设定与所检测的周期相匹配的总曝光时间。 总曝光时间被划分为交替有效和无效的曝光时间，以使得有效曝光时间的总和等于对应于电子快门的实际速度的实际曝光时间。 在有效曝光时间期间，CMOS传感器中累积的电荷被存储在浮动扩散中，而在无效曝光时间期间积累的电荷被排出。 在总曝光时间结束时，在有效曝光时间期间存储的电荷被转换为输出到信号处理电路的电信号。 当在高亮度照明下操作快门用于成像时，该装置可以校正对应于照明能量变化的输出信号的变化。

公开(公告)号：US4366503A

公开(公告)日：1982-12-28

申请号：US197026

申请日：1980-10-15

申请人： Sumio Terakawa ,  Tohru Takamura ,  Kenju Horii ,  Takahiro Yamada

发明人： Sumio Terakawa ,  Tohru Takamura ,  Kenju Horii ,  Takahiro Yamada

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/372 ,  H04N5/374 ,  H04N3/14

CPC分类号： H04N3/1568 ,  H01L27/14654

摘要： A solid-state image pick-up device has transfer gates and storage capacitive elements with smaller capacitance than that of a vertical transfer lines between the vertical transfer lines to which signal charge is transferred through the operation of a signal charge transfer circuit containing the vertical shift register and switch elements, and a horizontal shift register for receiving the signal charge. The horizontal shift register is of the charge coupling type. The horizontal shift register has unit elements two times the vertical transfer lines. An optical signal and the other charge than the optical signal charge are stored in the adjacent unit elements and then the other charge than the optical charge is outputted to the other portion than a signal output portion.A charge transfer method for the solid state image pick-up device comprises a first step of injecting bias charge from the storage capacitive elements to the vertical transfer lines, a second step for transferring a changed amount of the charge on the vertical transfer line and the bias charge to the storage capacitive element and a third step for transferring only the changed amount of the charge to the horizontal shift register.

摘要翻译： 固态图像拾取装置具有传输门和存储电容元件，其电容小于通过包含垂直移位的信号电荷传输电路的操作而传送信号电荷的垂直传输线之间的垂直传输线的电容 寄存器和开关元件，以及用于接收信号电荷的水平移位寄存器。 水平移位寄存器是电荷耦合类型。 水平移位寄存器具有垂直传输线的两倍的单位元素。 与光信号电荷相比，光信号和其他电荷被存储在相邻单元中，然后比光电荷另外的电荷被输出到比信号输出部分的另一个部分。 用于固体摄像装置的电荷转移方法包括将偏置电荷从存储电容元件注入到垂直传输线的第一步骤，用于在垂直传输线上传送改变量的电荷的第二步骤和 向存储电容元件施加偏置电荷，以及仅将改变量的电荷传送到水平移位寄存器的第三步骤。

公开(公告)号：US5324669A

公开(公告)日：1994-06-28

申请号：US105564

申请日：1993-08-12

申请人： Takao Kuroda ,  Sumio Terakawa ,  Shigeru Okamoto ,  Katsuya Ishikawa

发明人： Takao Kuroda ,  Sumio Terakawa ,  Shigeru Okamoto ,  Katsuya Ishikawa

IPC分类号： H01L27/148 ,  H01L21/339

CPC分类号： H01L27/14887 ,  H01L27/14831

摘要： The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer ( 6 ) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9 ) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate ( 5). The thick, low-density p-layer ( 33 ) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion. The above constitution can bring about a solid-state image pickup device that can prevent the blooming phenomenon, causes less residual images, and can operate as an electronic shutter with ease.

摘要翻译： 光电变换器n层（7）的杂质浓度和形成有电变换器（7）和转移通道（9）的杂质区域的p层（6）的杂质浓度各自分布 在距离半导体衬底（5）的表面更多的内部部分具有其最大值。 或者，i）薄的高密度p层（34）和ii）杂质区域的厚的低密度p层（33），其中电变换器（7）和传输通道（9） 可以形成。 使这两个p层（33,34）中的每个最小电位与施加到n型半导体衬底（5）的电压具有不同的依赖性。 厚的低密度p层（33）以这样的方式形成，使得其在其底部与光电转换器n层（7）的一部分接触。 上述结构可以产生可以防止起霜现象的固态图像拾取装置，导致较少残留图像，并且可以容易地作为电子快门操作。

公开(公告)号：US5083173A

公开(公告)日：1992-01-21

申请号：US628940

申请日：1990-12-14

申请人： Takahiro Yamada ,  Sumio Terakawa

发明人： Takahiro Yamada ,  Sumio Terakawa

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

CPC分类号： H01L27/14831

摘要： Signal charge conveying regions are made as oblong depletion regions which are formed in operation state along and at the vicinity of side walls of a trench or groove in a seimconductor imaging device, thereby improving resolution power, dynamic range, sensitivity and S/N characteristics are improved.

摘要翻译： 信号电荷输送区域被制成长条形耗尽区域，它们沿着沿着导电体成像装置中的沟槽或凹槽的侧壁并沿着其附近形成，从而提高分辨率，动态范围，灵敏度和S / N特性是 改进。

公开(公告)号：US09210304B2

公开(公告)日：2015-12-08

申请号：US14002981

申请日：2012-03-16

申请人： Takahiro Yamada ,  Sumio Terakawa

发明人： Takahiro Yamada ,  Sumio Terakawa

IPC分类号： H01L29/80 ,  H04N5/225 ,  H01L27/146 ,  H01L27/148 ,  H04N5/355 ,  H04N5/3745

CPC分类号： H04N5/225 ,  H01L27/14679 ,  H01L27/14862 ,  H04N5/35509 ,  H04N5/3745

摘要： Techniques described herein generally relate to digital imaging systems, methods and devices. In some example embodiments, a low light adaptive photoelectric imaging device may include a photoelectric transducer configured to receive and convert incident light into an electric charge that varies in response to an intensity of the received incident light. Some example imaging devices may also include circuitry coupled to the photoelectric transducer and configured to electrically float a potential at one or more terminals of the photoelectric transducer effective to cause the photoelectric transducer to amplify the electric charge according to a gain function that non-linearly varies relative to the intensity of the received incident light.

摘要翻译： 本文描述的技术通常涉及数字成像系统，方法和装置。 在一些示例性实施例中，低光自适应光电成像装置可以包括被配置为接收并将入射光转换成响应于所接收的入射光的强度而变化的电荷的光电换能器。 一些示例性成像装置还可以包括耦合到光电传感器并被配置为电浮动光电传感器的一个或多个端子处的电位的电路，其有效地使光电传感器根据非线性变化的增益函数来放大电荷 相对于所接收的入射光的强度。