公开(公告)号：US07898628B2

公开(公告)日：2011-03-01

申请号：US12193144

申请日：2008-08-18

申请人： Yoshimitsu Ishikawa ,  Tetsuyuki Kurata

发明人： Yoshimitsu Ishikawa ,  Tetsuyuki Kurata

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/133634 ,  G02F2001/133635

摘要： A transverse electric field mode liquid crystal display device capable of improving the viewing angle characteristic in black display at an oblique viewing angle with a simple structure is provided. In the liquid crystal display device in accordance with one aspect of the present invention, (a) the product (Δn·d) of the thickness d of the liquid crystal layer sandwiched between a pair of substrates and the refractive index anisotropy Δn of the liquid crystal layer is within the range of 320 nm±20 nm, (b) each of the pair of polarizing plates is composed of a polarizer and transparent protective films sandwiching the polarizer therebetween, and the polarizing plate and the substrate are directly stuck together without any retardation film or optical compensation layer interposed therebetween, (c) the delay phase axis of the transparent protective film that protects the liquid crystal layer side is generally parallel with the absorption axis of the polarizer in each of the pair of polarizing plates, and (d) the in-plane retardation Re is equal to or less than 10 nm, and the retardation in thickness direction Rth is no less than 30 nm and no greater than 40 nm for the transparent protective film that protects the liquid crystal layer side in each of the pair of polarizing plates.

摘要翻译： 提供了能够以简单的结构在倾斜视角改善黑色显示的视角特性的横向电场模式液晶显示装置。 在根据本发明的一个方面的液晶显示装置中，（a）夹在一对基板之间的液晶层的厚度d和折射率各向异性Dgr的乘积（＆Dgr; n·d） 液晶层的n在320nm±20nm的范围内，（b）一对偏振片各自由偏振片和夹在其间的偏振片的透明保护膜构成，偏振片和基板直接 粘贴在一起而没有任何延迟膜或光学补偿层，（c）保护液晶层侧的透明保护膜的延迟相位轴大致平行于偏振片的吸收轴， ，（d）面内相位差Re为10nm以下，厚度方向Rth的相位差为30nm以上，反相不大于40nm 父保护膜，其保护一对偏振片中的每一个中的液晶层侧。

公开(公告)号：US08648971B2

公开(公告)日：2014-02-11

申请号：US13549834

申请日：2012-07-16

申请人： Yoshimitsu Ishikawa ,  Takeshi Kubota

发明人： Yoshimitsu Ishikawa ,  Takeshi Kubota

IPC分类号： G02F1/1335

CPC分类号： G02F1/133512 ,  H04N13/31

摘要： In a multiple view liquid crystal display, occurrence of a reverse view phenomenon and a reverse view crosstalk are suppressed. A black matrix is formed on the opposed surface of a counter substrate to a TFT substrate in a liquid crystal panel, and a parallax barrier is provided on the black matrix with a gap layer having a predetermined thickness interposed therebetween. The black matrix includes a first light blocking part disposed immediately below an opening in the parallax barrier, and a second light blocking part with a portion immediate thereabove covered by the parallax barrier. The second light blocking part includes a low refractive-index film (reverse view preventive film), having a lower refractive index than that of a liquid crystal, at the end thereof which is in contact with a pixel opening between the second light blocking part and the adjacent first light blocking part.

摘要翻译： 在多视图液晶显示器中，抑制了反向视图现象和反向视图串扰的发生。 在液晶面板的TFT基板的对置面上形成有黑色矩阵，并且在黑矩阵上设有间隔层，并具有规定厚度的间隙层。 该黑色矩阵包括位于视差屏障中的开口正下方的第一遮光部分和具有由该视差屏障覆盖的其上的部分的第二遮光部分。 第二遮光部包括在与第二遮光部和第二遮光部之间的像素开口接触的端部具有比液晶低的折射率的低折射率膜（防反射膜） 相邻的第一遮光部分。

公开(公告)号：US20060290830A1

公开(公告)日：2006-12-28

申请号：US11421233

申请日：2006-05-31

申请人： Hiroshi TERAMOTO ,  Yoshimitsu Ishikawa ,  Yasuhiro Morii

发明人： Hiroshi TERAMOTO ,  Yoshimitsu Ishikawa ,  Yasuhiro Morii

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133512 ,  G02F1/133514 ,  G02F2202/40

摘要： A semi-transmissive liquid crystal display device includes a TFT array substrate having a transmission pixel electrode that forms a transmission area and a reflection pixel electrode that forms a reflection area, a color filter substrate having a color filter formed by using a color material and a light-shielding film provided around the color filter, and a liquid crystal held between the TFT array substrate and the color filter substrate. The semi-transmissive liquid crystal display device further includes an opening provided in the color material in the reflection area and having at least two sides formed over the light-shielding film of finished dimensional accuracy higher than that of the color material, and a resin film formed to cover the color material while burying the opening.

摘要翻译： 半透射型液晶显示装置包括具有形成透射区域的透射像素电极和形成反射区域的反射像素电极的TFT阵列基板，具有通过使用着色材料形成的滤色器的滤色器基板和 设置在滤色器周围的遮光膜，以及保持在TFT阵列基板和滤色器基板之间的液晶。 半透射型液晶显示装置还包括设置在反射区域中的彩色材料中的开口，并且具有形成在遮光膜上的至少两侧的成品尺寸精度高于彩色材料的开口，以及树脂膜 形成为掩盖开口的颜色材料。

公开(公告)号：US20070263145A1

公开(公告)日：2007-11-15

申请号：US11745810

申请日：2007-05-08

申请人： Yoshimitsu Ishikawa ,  Yasuhiro Morii

发明人： Yoshimitsu Ishikawa ,  Yasuhiro Morii

IPC分类号： G02F1/1335

CPC分类号： G02F1/133536 ,  G02F1/133555 ,  G02F1/133634 ,  G02F2001/133638 ,  G02F2201/38

摘要： A liquid crystal display device according to an embodiment of the invention includes: a transmissive region and a reflective region in one pixel; a TFT substrate; a CF substrate; a liquid crystal layer formed between the TFT substrate and the CF substrate; a first polarization control element provided on the side opposite to the liquid crystal layer of the TFT substrate; and a second polarization control element provided on the side opposite to the liquid crystal layer of the CF substrate. The first polarization control element and the second polarization control element each include at least a polarizing plate and a retarder. The second polarization control element includes a liquid crystal film as a retarder, the second polarization control element is provided closer to a display surface side than the first polarization control element, and an antireflection film is formed on the second polarization control element.

摘要翻译： 根据本发明实施例的液晶显示装置包括：一个像素中的透射区域和反射区域; TFT基板; CF基板; 形成在TFT基板和CF基板之间的液晶层; 第一偏振控制元件，设置在与TFT基板的液晶层相反的一侧; 以及设置在与CF基板的液晶层相反的一侧的第二偏振控制元件。 第一偏振控制元件和第二偏振控制元件至少包括偏振片和延迟器。 第二偏振控制元件包括作为延迟器的液晶膜，第二偏振控制元件设置成比第一偏振控制元件更靠近显示表面侧，并且在第二偏振控制元件上形成防反射膜。

公开(公告)号：US07262127B2

公开(公告)日：2007-08-28

申请号：US11040366

申请日：2005-01-21

申请人： Yoshimitsu Ishikawa

发明人： Yoshimitsu Ishikawa

IPC分类号： H01L21/76 ,  H01L21/22 ,  H01L21/4763 ,  H01L21/44 ,  H01L29/40

CPC分类号： H01L21/76808 ,  H01L21/7681

摘要： The present invention provides a method for forming a void-free copper damascene structure comprising a substrate having a conductive structure, a first dielectric layer on the substrate, a diffusion barrier layer on the first dielectric layer, and a second dielectric layer on the barrier layer. The method comprises forming via and trench openings developing a photoresist through a first and second hard mask. The first hard mask is laterally etched such that it is eroded to a greater extent from the trench opening with respect to the underlying second dielectric layer. Remaining gap fill layer is removed and the diffusion barrier layer within the via opening is etched to expose the conductive structure. The via and trench openings are plated with a barrier metal and a copper seed layer to obtain copper features that fill the openings and form a void-free copper damascene structure.

摘要翻译： 本发明提供一种形成无空隙的铜镶嵌结构的方法，该方法包括具有导电结构的基底，基底上的第一介电层，第一介电层上的扩散阻挡层和阻挡层上的第二介电层 。 该方法包括形成通过第一和第二硬掩模显影光致抗蚀剂的通孔和沟槽开口。 第一硬掩模被横向蚀刻，使得其相对于下面的第二介电层从沟槽开口被更大程度地侵蚀。 去除剩余间隙填充层，并且蚀刻通孔开口内的扩散阻挡层以暴露导电结构。 通孔和沟槽开口镀有阻挡金属和铜种子层，以获得填充开口并形成无空隙的铜镶嵌结构的铜特征。

公开(公告)号：US20060166484A1

公开(公告)日：2006-07-27

申请号：US11040366

申请日：2005-01-21

申请人： Yoshimitsu Ishikawa

发明人： Yoshimitsu Ishikawa

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/7681

摘要： The present invention provides a method for forming a void-free copper damascene structure comprising a substrate having a conductive structure, a first dielectric layer on the substrate, a diffusion barrier layer on the first dielectric layer, and a second dielectric layer on the barrier layer. The method comprises forming via and trench openings developing a photoresist through a first and second hard mask. The first hard mask is laterally etched such that it is eroded to a greater extent from the trench opening with respect to the underlying second dielectric layer. Remaining gap fill layer is removed and the diffusion barrier layer within the via opening is etched to expose the conductive structure. The via and trench openings are plated with a barrier metal and a copper seed layer to obtain copper features that fill the openings and form a void-free copper damascene structure.

摘要翻译： 本发明提供一种形成无空隙的铜镶嵌结构的方法，该方法包括具有导电结构的基底，基底上的第一介电层，第一介电层上的扩散阻挡层和阻挡层上的第二介电层 。 该方法包括形成通过第一和第二硬掩模显影光致抗蚀剂的通孔和沟槽开口。 第一硬掩模被横向蚀刻，使得其相对于下面的第二介电层从沟槽开口被更大程度地侵蚀。 去除剩余间隙填充层，并且蚀刻通孔开口内的扩散阻挡层以暴露导电结构。 通孔和沟槽开口镀有阻挡金属和铜种子层，以获得填充开口并形成无空隙的铜镶嵌结构的铜特征。

公开(公告)号：US5814153A

公开(公告)日：1998-09-29

申请号：US884500

申请日：1997-06-27

申请人： Yoshimitsu Ishikawa

发明人： Yoshimitsu Ishikawa

IPC分类号： C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  C23C16/00

CPC分类号： C23C16/45512 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  Y10S438/907 ,  Y10S438/909 ,  Y10S438/935

摘要： To provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus in which both a dependency on base material and a film characteristic are satisfied in film forming steps of the semiconductor manufacturing. There are provided a first film forming part 4 and a second film forming part 5 along a transporting direction A in the transporting system 1 for the semiconductor substrate 2, the first film forming part 4 is provided with a post-mixed type gas supplying means 7 for supplying a plurality of kinds of reaction gases onto a semiconductor substrate while the gases are being separated from each other through an inert gas, and the second film forming part 5 is provided with a premixed type gas supplying means 8 for supplying the mixture gas onto the semiconductor substrate while a plurality of kinds of reaction gases are mixed in advance.

摘要翻译： 为了提供在半导体制造的成膜步骤中满足基材和膜特性的依赖性的半导体器件制造方法和半导体器件制造装置。 在半导体基板2的输送系统1中沿着输送方向A设置第一成膜部件4和第二成膜部件5，第一成膜部件4设置有后混合型气体供给装置7 用于在气体通过惰性气体彼此分离的同时将多种反应气体供给到半导体衬底上，并且第二膜形成部分5设置有预混合气体供应装置8，用于将混合气体供应到 半导体衬底，同时预先混合多种反应气体。

公开(公告)号：US08395728B2

公开(公告)日：2013-03-12

申请号：US13012177

申请日：2011-01-24

申请人： Yoshimitsu Ishikawa

发明人： Yoshimitsu Ishikawa

IPC分类号： G02F1/1335

CPC分类号： G02F1/133528 ,  G02B27/2214 ,  G02F1/1396 ,  G02F2001/133531 ,  G02F2001/133638

摘要： In a liquid crystal display apparatus in which a liquid crystal layer is twist-aligned when no electric field is applied, Δnd value of a liquid crystal layer in a wavelength of 550 nm is 300 to 400 nm, each of directions of polarizing axes of pair of linear polarizers is substantially parallel or vertical to the alignment direction of liquid crystal molecules in each end face of the liquid crystal layer that is closer to each of linear polarizers, and the angle between polarizing axes of the pair of linear polarizers is 85° or larger and smaller than 90°. In a liquid crystal display apparatus in which a liquid crystal layer is aligned to be substantially vertical when no electric field is applied, the angle between polarizing axes of the pair of linear polarizers is 85° or larger and smaller than 90°. In a liquid crystal display apparatus of a lateral electric field drive system, a uniaxial alignment angle of a liquid crystal layer when no electric field is applied is larger than −45° and −40° or smaller, or +40° or larger and smaller than +45°.

摘要翻译： 在不施加电场时液晶层被扭曲取向的液晶显示装置中，波长550nm的液晶层的＆Dgr nd nd值为300〜400nm，偏振轴方向 一对线偏振器基本上平行于或垂直于液晶层的每个线性偏振器的每个端面中的液晶分子的取向方向，并且该对线偏振器的偏振轴之间的角度为85° °以上且小于90°。 在不施加电场的情况下将液晶层取向为基本垂直的液晶显示装置中，一对线偏振器的偏振轴之间的角度为85°以上且小于90°。 在横向电场驱动系统的液晶显示装置中，当不施加电场时液晶层的单轴取向角大于-45°和-40°或更小，或+ 40°或更大 超过+ 45°。

公开(公告)号：US5693579A

公开(公告)日：1997-12-02

申请号：US615778

申请日：1996-03-14

申请人： Yoshimitsu Ishikawa

发明人： Yoshimitsu Ishikawa

IPC分类号： C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/02

CPC分类号： C23C16/45512 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  Y10S438/907 ,  Y10S438/909 ,  Y10S438/935

摘要： To provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus in which both a dependency on base material and a film characteristic are satisfied in film forming steps of the semiconductor manufacturing. There are provided a first film forming part 4 and a second film forming part 5 along a transporting direction A in the transporting system 1 for the semiconductor substrate 2, the first film forming part 4 is provided with a post-mixed type gas supplying means 7 for supplying a plurality of kinds of reaction gases onto a semiconductor substrate while the gases are being separated from each other through an inert gas, and the second film forming part 5 is provided with a premixed type gas supplying means 8 for supplying the mixture gas onto the semiconductor substrate while a plurality of kinds of reaction gases are mixed in advance.

摘要翻译： 为了提供在半导体制造的成膜步骤中满足基材和膜特性的依赖性的半导体器件制造方法和半导体器件制造装置。 在半导体基板2的输送系统1中沿着输送方向A设置第一成膜部件4和第二成膜部件5，第一成膜部件4设置有后混合型气体供给装置7 用于在气体通过惰性气体彼此分离的同时将多种反应气体供给到半导体衬底上，并且第二膜形成部分5设置有预混合气体供应装置8，用于将混合气体供应到 半导体衬底，同时预先混合多种反应气体。

公开(公告)号：US09257081B2

公开(公告)日：2016-02-09

申请号：US13566443

申请日：2012-08-03

申请人： Akio Nakayama ,  Yoshimitsu Ishikawa

发明人： Akio Nakayama ,  Yoshimitsu Ishikawa

IPC分类号： G09G3/36 ,  G02B27/22 ,  G09F9/35 ,  G09F19/14 ,  G02F1/13 ,  G02F1/1343 ,  H04N13/04

CPC分类号： G09G3/3614 ,  G02B27/2214 ,  G02F1/1323 ,  G02F1/1343 ,  G02F2001/134345 ,  G09F9/35 ,  G09F19/14 ,  G09G3/3648 ,  H04N13/31

摘要： A two-screen display device, in which an increase of production cost can be suppressed while the same resolution as an image of a usual (one-screen display) device is maintained, is provided. In a liquid crystal display panel of the two-screen display device, each of a first sub-pixel for first image and a second sub-pixel for second image has an aspect ratio of about 6:1. A source line supplies an image signal to both the first sub-pixel and the second sub-pixel. Each row of the sub-pixel includes a gate line (first gate line) that drives the first sub-pixel and a gate line (second gate line) that drives the second sub-pixel. An opening of a parallax barrier is disposed in a region between the first sub-pixel and the second sub-pixel.

摘要翻译： 提供了一种双屏显示装置，其中可以抑制与通常（一屏显示）装置的图像相同的分辨率的同时提高生产成本。 在双屏显示装置的液晶显示面板中，用于第一图像的第一子像素和第二图像的第二子像素中的每一个具有约6:1的纵横比。 源极线将图像信号提供给第一子像素和第二子像素。 子像素的每行包括驱动第一子像素的栅极线（第一栅极线）和驱动第二子像素的栅极线（第二栅极线）。 视差屏障的开口设置在第一子像素与第二子像素之间的区域中。