公开(公告)号：US20080170149A1

公开(公告)日：2008-07-17

申请号：US11856453

申请日：2007-09-17

申请人： Yoshinori IIDA ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara

发明人： Yoshinori IIDA ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara

IPC分类号： H04N3/14

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14641

摘要： There is provided a single-chip color solid-state imager of a backside illumination type having high sensitivity and low noise that facilitates the miniaturization of a pixel size. A pixel readout circuit is selectively disposed on a part of pixels of a readout block consisting of a plurality of pixels that share the pixel readout circuit.

摘要翻译： 提供了具有高灵敏度和低噪声的背面照明类型的单芯片彩色固态成像器，其有助于像素尺寸的小型化。 像素读出电路选择性地设置在由共享像素读出电路的多个像素组成的读出块的像素的一部分上。

公开(公告)号：US20050052724A1

公开(公告)日：2005-03-10

申请号：US10895049

申请日：2004-07-21

申请人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

发明人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC分类号： H04R1/38 ,  G01H9/00 ,  G02F1/33

CPC分类号： G01H9/00

摘要： An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.

摘要翻译： 光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。 电信号对应于隔膜中振动的位移。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20120007205A1

公开(公告)日：2012-01-12

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US07026617B2

公开(公告)日：2006-04-11

申请号：US10647345

申请日：2003-08-26

申请人： Naoya Mashio ,  Keitaro Shigenaka ,  Hideyuki Funaki ,  Yoshinori Iida ,  Ikuo Fujiwara

发明人： Naoya Mashio ,  Keitaro Shigenaka ,  Hideyuki Funaki ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC分类号： G01J5/00

CPC分类号： G01J5/08 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/0245 ,  G01J5/0853 ,  G01J5/14 ,  G01J5/22 ,  G01J2005/123 ,  H04N5/33

摘要： An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

摘要翻译： 红外图像传感器包括（a）基体，（b）设置在基体上的多条信号线，（c）与信号线交叉的多个地址线，（d）多个检测器部分， 信号线的交叉区域和地址线，每个检测器部分连接在对应的信号线和地址线之间，每个检测器部分被配置为检测红外线，（e）多个支撑梁 每个检测器部分在基体上方，以及（f）多个接触器，其构造成使得每个检测器部分与基体热接触，以便将热能积聚在每个检测器部分中朝向基体 。

公开(公告)号：US20070028695A1

公开(公告)日：2007-02-08

申请号：US11534541

申请日：2006-09-22

申请人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

发明人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC分类号： G01H9/00

CPC分类号： G01H9/00

摘要： An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.

摘要翻译： 光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。 电信号对应于隔膜中振动的位移。

公开(公告)号：US07134343B2

公开(公告)日：2006-11-14

申请号：US10895049

申请日：2004-07-21

申请人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

发明人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC分类号： G01H9/00 ,  G01B11/16

CPC分类号： G01H9/00

摘要： An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.

摘要翻译： 光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。 电信号对应于隔膜中振动的位移。

公开(公告)号：US20100025584A1

公开(公告)日：2010-02-04

申请号：US12508846

申请日：2009-07-24

申请人： Keita SASAKI ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

发明人： Keita SASAKI ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

IPC分类号： H01L31/02 ,  H01L31/00

CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。

公开(公告)号：US20090236526A1

公开(公告)日：2009-09-24

申请号：US12405497

申请日：2009-03-17

申请人： Keita Sasaki ,  Hiroto Honda ,  Hideyuki Funaki ,  Ikuo Fujiwara ,  Kazuhiro Suzuki

发明人： Keita Sasaki ,  Hiroto Honda ,  Hideyuki Funaki ,  Ikuo Fujiwara ,  Kazuhiro Suzuki

IPC分类号： H01L27/14

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0853

摘要： An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.

摘要翻译： 一种红外线传感器元件包括：第一信号布线部，包括第一信号线，设置在与设置有凹部的区域不同的半导体基板的第一区域上; 第二信号布线部分，包括第二信号线，并设置在第一区域上，以与第一信号布线部分相交; 支撑件，其包括设置在所述凹部上方的支撑布线部，并且包括在其第一端处电连接到所述第一信号线的第一线和与所述第一线平行布置的与所述第一线绝缘的第二线，以及 在其第一端电连接到第二信号线; 电连接到第一和第二导线的第二端的热电换能器; 设置在所述热电换能器上的红外线吸收层; 以及设置在所述凹部上的检测单元。

公开(公告)号：US08304848B2

公开(公告)日：2012-11-06

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/00 ,  H01L31/04

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。