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11 条记录 (耗时 0.018 秒)

    Semiconductor light emitting device and method for producing the same
    2.
    发明授权
    Semiconductor light emitting device and method for producing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US06351480B1

    公开(公告)日：2002-02-26

    申请号：US09705108

    申请日：2000-11-01

    申请人： Yoshiro Akagi

    发明人： Yoshiro Akagi

    IPC分类号： H01S500

    CPC分类号： H01L33/305 ,  H01L33/145 ,  H01S5/2206 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054

    摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.

    摘要翻译： 发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。 碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。 或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。 另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞 提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。

    Electrochemical measurement electrode, electrochemical measurement electrode chip, and electrochemical measuring method and analysis method using the same
    3.
    发明申请
    Electrochemical measurement electrode, electrochemical measurement electrode chip, and electrochemical measuring method and analysis method using the same 有权
    电化学测量电极，电化学测量电极芯片，电化学测量方法及分析方法采用该方法

    公开(公告)号：US20110174636A1

    公开(公告)日：2011-07-21

    申请号：US12930994

    申请日：2011-01-19

    申请人： Naomi Asano ,  Yuichiro Shimizu ,  Yoshiro Akagi ,  Ikuo Nakano

    发明人： Naomi Asano ,  Yuichiro Shimizu ,  Yoshiro Akagi ,  Ikuo Nakano

    IPC分类号： G01N27/26

    CPC分类号： G01N27/301

    摘要： In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.

    摘要翻译： 为了实现没有由于氯化银络离子引起的峰值的精确的电化学测量，本发明的测量包含氯离子的样品溶液中的电化学活性物质的电化学测量电极包括：（i）工作电极， （ii）由银和氯化银制成的参比电极，和（iii）从参考电极中产生的氯化银络合物离子捕获银离子的银离子捕获材料。

    Electrochemical measurement electrode, electrochemical measurement electrode chip, and electrochemical measuring method and analysis method using the same
    4.
    发明授权
    Electrochemical measurement electrode, electrochemical measurement electrode chip, and electrochemical measuring method and analysis method using the same 有权
    电化学测量电极，电化学测量电极芯片，电化学测量方法及分析方法采用该方法

    公开(公告)号：US08702963B2

    公开(公告)日：2014-04-22

    申请号：US12930994

    申请日：2011-01-19

    申请人： Naomi Asano ,  Yuichiro Shimizu ,  Yoshiro Akagi ,  Ikuo Nakano

    发明人： Naomi Asano ,  Yuichiro Shimizu ,  Yoshiro Akagi ,  Ikuo Nakano

    IPC分类号： G01N27/26

    CPC分类号： G01N27/301

    摘要： In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.

    摘要翻译： 为了实现没有由于氯化银络离子引起的峰值的精确的电化学测量，本发明的测量包含氯离子的样品溶液中的电化学活性物质的电化学测量电极包括：（i）工作电极， （ii）由银和氯化银制成的参比电极，和（iii）从参考电极中产生的氯化银络合物离子捕获银离子的银离子捕获材料。

    Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance
    8.
    发明授权
    Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance 有权
    能够提高有效互导的全反相型SOI-MOSFET

    公开(公告)号：US06734501B2

    公开(公告)日：2004-05-11

    申请号：US10058221

    申请日：2002-01-29

    申请人： Takuo Sugano ,  Toru Toyabe ,  Tatsuro Hanajiri ,  Akira Saito ,  Yoshiro Akagi

    发明人： Takuo Sugano ,  Toru Toyabe ,  Tatsuro Hanajiri ,  Akira Saito ,  Yoshiro Akagi

    IPC分类号： H01L310392

    CPC分类号： H01L29/78696 ,  H01L27/1203 ,  H01L29/458 ,  H01L29/66621 ,  H01L29/66772

    摘要： A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.

    摘要翻译： 全反相型SOI-MOSFET具有由属于顶部硅层13的部分构成的沟道区18，该沟道区18位于栅电极15的下方，源极区16和漏极区17属于顶部硅 层13并且位于该通道区域18附近。在操作期间，通道区域18在整个厚度上反转。 源极区域16具有源极电阻RS，其满足关于通道区域18本身的互导体gm的关系（1 / gm）> RS。 根据这种完全反转型的SOI-MOSFET，可以提高有效的互导（Gm）。

    Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same
    9.
    发明授权
    Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same 失效
    具有碳和II族元素原子的半导体发光器件作为p型掺杂剂及其制造方法

    公开(公告)号：US06181723B2

    公开(公告)日：2001-01-30

    申请号：US09073106

    申请日：1998-05-05

    申请人： Nobuhiro Okubo ,  Masaya Ishida ,  Yoshiro Akagi ,  Masanori Watanabe ,  Fumihiro Konushi

    发明人： Nobuhiro Okubo ,  Masaya Ishida ,  Yoshiro Akagi ,  Masanori Watanabe ,  Fumihiro Konushi

    IPC分类号： H01S500

    CPC分类号： H01L33/305 ,  H01L33/145 ,  H01S5/2206 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054

    摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.

    摘要翻译： 发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。 碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。 或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。 另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞 提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。