公开(公告)号：US07292276B2

公开(公告)日：2007-11-06

申请号：US10875780

申请日：2004-06-25

申请人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

发明人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/3658 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/378

摘要： In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.

摘要翻译： 在CMOS图像传感器中，对于每个水平线的读取操作，抑制了一系列噪声去除操作之后的电流泄漏，从而抑制了图像传感器的输出显示屏幕上出现的图像噪声。 提供信号存储区域，用于将从成像区域中选择的同一行中的单位单元读取的信号存储到垂直信号线和水平选择晶体管上，用于顺序选择和读取存储在各个信号存储区域中的信号并将其传送到 读取水平信号线。 至少在从信号存储区读取信号的期间中，与垂直信号线和水平信号线之间的信号路径电连接的晶体管的漏极和源极之一相对于 衬底区域。 两个相邻的水平选择晶体管形成一对。 每对中的水平选择晶体管共享源极/漏极区域中的一个，以便与水平信号线共同连接，源极/漏极区域中的另一个分别连接到垂直信号线。

公开(公告)号：US07362366B2

公开(公告)日：2008-04-22

申请号：US10875781

申请日：2004-06-25

申请人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

发明人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/3658 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/378

摘要： In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.

摘要翻译： 在CMOS图像传感器中，对于每个水平线的读取操作，抑制了一系列噪声去除操作之后的电流泄漏，从而抑制了图像传感器的输出显示屏幕上出现的图像噪声。 提供信号存储区域，用于将从成像区域中选择的同一行中的单位单元读取的信号存储到垂直信号线和水平选择晶体管上，用于顺序选择和读取存储在各个信号存储区域中的信号并将其传送到 读取水平信号线。 至少在从信号存储区读取信号的期间中，与垂直信号线和水平信号线之间的信号路径电连接的晶体管的漏极和源极之一相对于 衬底区域。 两个相邻的水平选择晶体管形成一对。 每对中的水平选择晶体管共享源极/漏极区域中的一个，以便与水平信号线共同连接，源极/漏极区域中的另一个分别连接到垂直信号线。

公开(公告)号：US06801256B1

公开(公告)日：2004-10-05

申请号：US09322994

申请日：1999-06-01

申请人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

发明人： Yoshitaka Egawa ,  Yoriko Tanaka ,  Shinji Ohsawa ,  Yukio Endo ,  Hiromi Kusakabe ,  Nagataka Tanaka

IPC分类号： H04N314

CPC分类号： H04N5/3658 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/378

摘要： In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.

公开(公告)号：US5506429A

公开(公告)日：1996-04-09

申请号：US208750

申请日：1994-03-11

申请人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

发明人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3728 ,  H01L29/765

CPC分类号： H01L27/14831

摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.

摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。 垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。 传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。 多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。 在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。 电荷转移栅电极和缓冲电极通过第一接触孔相互连接。 缓冲电极和并联线通过第二接触孔耦合在一起。 分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

公开(公告)号：US6091449A

公开(公告)日：2000-07-18

申请号：US21940

申请日：1998-02-11

申请人： Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14 ,  H01L31/062

CPC分类号： H04N5/37457 ,  H01L27/14643 ,  H04N5/3651 ,  H04N5/3741

摘要： In an MOS-type solid-state imaging apparatus, plural unit cells are arranged in a two-dimensional matrix, unit cells in one horizontal line (row) are selected by a vertical address circuit, and vertical signal lines to which outputs from the unit cells in one vertical line (column) are supplied are selected by a horizontal address circuit, thereby sequentially outputting signals from the respective unit cells. Each unit cell includes an output circuit for outputting an output from a photodiode to a vertical signal line, photodiodes connected in parallel to the output circuit, and a selection switch for selecting one of the photodiodes and connecting it to the output circuit. The output circuit comprising an amplification transistor for amplifying an output from the photodiode, a selection transistor for selecting the unit cell, and a reset transistor for resetting the charge in the photodiode.

摘要翻译： 在MOS型固体摄像装置中，将多个单位电池配置为二维矩阵，通过垂直地址电路选择一条水平线（行）的单位电池，并将来自该单元的输出的垂直信号线 提供一条垂直线（列）中的单元由水平地址电路选择，从而顺序地输出来自各个单位单元的信号。 每个单位单元包括用于输出从光电二极管到垂直信号线的输出，与输出电路并联连接的光电二极管的输出电路和用于选择一个光电二极管并将其连接到输出电路的选择开关。 输出电路包括用于放大来自光电二极管的输出的放大晶体管，用于选择单元的选择晶体管，以及用于复位光电二极管中的电荷的复位晶体管。

公开(公告)号：US07113213B2

公开(公告)日：2006-09-26

申请号：US09927632

申请日：2001-08-13

申请人： Yoshiyuki Matsunaga ,  Keiji Mabuchi ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka

发明人： Yoshiyuki Matsunaga ,  Keiji Mabuchi ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/2173 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/378

摘要： An image system uses an amplification-type MOS sensor for receiving an optical image through a photoelectric conversion element, converting the image into an electrical signal, and outputting the signal. This system includes an optical system for guiding this optical image to a predetermined position, an image processing means having a sensor for photoelectrically converting the optical image guided to the predetermined position by the optical system into an electrical signal in units of pixels, and a signal process device for processing an output from the image processing means, and outputting the resultant data. The sensor includes a photoelectric conversion element placed at the predetermined position, an output circuit having an amplification MOS transistor connected to the photoelectric conversion element and serving to amplify and output an output from the photoelectric conversion element at a first timing and output noise independent of the output from the photoelectric conversion element at a second timing, and a noise reduction circuit, connected to the output of the output circuit, having the same impedance at the first and second timings when viewed from the output circuit, and obtaining the difference between outputs from the output circuits at the first and second timings. By setting the same impedance, proper noise cancellation can be performed.

摘要翻译： 图像系统使用放大型MOS传感器，用于通过光电转换元件接收光学图像，将图像转换为电信号，并输出信号。 该系统包括用于将该光学图像引导到预定位置的光学系统，具有用于将由光学系统引导到预定位置的光学图像光电转换为以像素为单位的电信号的传感器的图像处理装置，以及信号 处理装置，用于处理来自图像处理装置的输出，并输出结果数据。 传感器包括放置在预定位置的光电转换元件，输出电路，其具有连接到光电转换元件的放大MOS晶体管，用于在第一定时放大并输出来自光电转换元件的输出，并且输出独立于 在第二定时从光电转换元件输出的噪声降低电路和连接到输出电路的输出的噪声降低电路，在从输出电路观察时在第一和第二定时具有相同的阻抗，并且获得来自 输出电路在第一和第二定时。 通过设置相同的阻抗，可以执行适当的噪声消除。

公开(公告)号：US08610186B2

公开(公告)日：2013-12-17

申请号：US12883564

申请日：2010-09-16

申请人： Nagataka Tanaka

发明人： Nagataka Tanaka

IPC分类号： H01L31/062

CPC分类号： H01L27/14645 ,  H01L27/14609 ,  H01L27/14621 ,  H04N5/35563 ,  H04N5/37457 ,  H04N9/045 ,  H04N2209/045

摘要： According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1 > QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2.

摘要翻译： 根据一个实施例，固态成像装置包括区域和滤色器。 该区域包括像素。 每个像素包括第一光电二极管，第一读晶体管，第二光电二极管，第二读晶体管，浮动扩散，复位晶体管和放大晶体管。 第一个光电二极管执行光电转换。 第一个读取晶体管读取一个信号电荷。 第二光电二极管的光敏性低于第一光电二极管。 第二个读取晶体管读取信号电荷。 浮动扩散存储信号电荷。 复位晶体管复位浮动扩散的电位。 放大晶体管放大浮动扩散的电位。 滤色器包括第一和第二滤光片。 满足QSAT1> QSAT2的关系。 当QSAT1表示第一滤波器的饱和电平，并且由QSAT2表示第二滤波器的饱和电平时。

公开(公告)号：US08085326B2

公开(公告)日：2011-12-27

申请号：US11553262

申请日：2006-10-26

申请人： Nagataka Tanaka

发明人： Nagataka Tanaka

IPC分类号： H04N5/208 ,  H04N5/335 ,  H04N3/14

CPC分类号： H04N5/335 ,  H04N5/3559

摘要： A solid imaging device includes a vertical signal line, a unit pixel including a photodiode which photoelectrically converts and stores incident light, an amplifying transistor which amplifies an input signal from the photodiode and outputs the amplified signal to the vertical signal line, and a reset transistor which resets a potential of a control electrode of the amplifying transistor, and a control circuit configured to maintain a state of a potential of the vertical signal line while the reset transistor is being driven.

摘要翻译： 固体成像装置包括垂直信号线，包括光电转换和存储入射光的光电二极管的单位像素，放大来自光电二极管的输入信号的放大晶体管，并将放大的信号输出到垂直信号线;以及复位晶体管 其复位放大晶体管的控制电极的电位，以及控制电路，被配置为在复位晶体管被驱动的同时保持垂直信号线的电位的状态。

公开(公告)号：US20110141333A1

公开(公告)日：2011-06-16

申请号：US12970160

申请日：2010-12-16

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335 ,  H01L31/0232

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/35563 ,  H04N5/374 ,  H04N5/37457 ,  H04N9/045

摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

摘要翻译： 根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面 形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素， 灵敏度像素。 并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。