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    Surface light emitting semiconductor laser element
    1.
    发明授权
    Surface light emitting semiconductor laser element 有权
    表面发光半导体激光元件

    公开(公告)号：US07684453B2

    公开(公告)日：2010-03-23

    申请号：US10847904

    申请日：2004-05-18

    申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

    发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

    IPC分类号： H01S5/00

    CPC分类号： G02B6/4296 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/2214 ,  H01S5/32308 ,  H01S2301/18 ,  H01S2301/203

    摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

    摘要翻译： 一种表面发光半导体激光元件，包括基板，包括设置在基板上的半导体多层的下反射器，设置在下反射器上的有源层，包括设置在有源层上的半导体多层的上反射器， 化合物半导体层，具有用于暴露上反射体并在上反射体上方延伸的第一开口，以及具有第二开口的金属膜，用于暴露设置在第一开口内部并在化合物半导体层上方延伸的上反射体，其中金属 膜和化合物半导体层构成复合折射率分布结构，其中复数折射率从第二开口的中心朝向外部改变。 还提供了以单峰横向模式发射激光的方法。

    Steam oxidation method
    2.
    发明申请
    Steam oxidation method 失效
    蒸汽氧化法

    公开(公告)号：US20050014387A1

    公开(公告)日：2005-01-20

    申请号：US10871900

    申请日：2004-06-18

    申请人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

    发明人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

    IPC分类号： C23C8/02 ,  C23C8/16 ,  H01L21/316 ,  C23C8/10 ,  H01L21/331

    CPC分类号： H01L21/02178 ,  C23C8/02 ,  C23C8/16 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666

    摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor, which comprises: a step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a subsequent step of holding the semiconductor substrate for a predetermined time at 450° C.

    摘要翻译： 本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。 提供一种蒸汽氧化方法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，其包括：将N 2气体供应到容纳半导体衬底并置换反应器内部的反应器的步骤 用N2气; 停止供给N 2气体并将N2气伴随有蒸汽的蒸气伴随的N 2气体供给到反应器的步骤; 同时提供伴随蒸气的N 2气体的半导体衬底的温度升高至450℃（蒸汽氧化温度）的步骤; 以及在450℃下将半导体衬底保持预定时间的后续步骤。

    Steam oxidation method
    3.
    发明授权
    Steam oxidation method 失效
    蒸汽氧化法

    公开(公告)号：US07001851B2

    公开(公告)日：2006-02-21

    申请号：US10871900

    申请日：2004-06-18

    申请人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

    发明人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

    IPC分类号： H01I21/31 ,  H01L21/469

    CPC分类号： H01L21/02178 ,  C23C8/02 ,  C23C8/16 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666

    摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a second step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.

    摘要翻译： 本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。 提供一种蒸汽氧化法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，并经受：向反应器壳体供应N 2气体的第一步骤 半导体衬底并用N 2气体代替反应器内部; 第二步骤是停止供应N 2气体并供应伴随着N 2气体的蒸气伴随的N 2气体，其中伴随着N 2气体 用蒸汽，到反应器; 在提供伴随蒸汽的N 2气体的同时，将半导体衬底的温度升高至450℃（蒸汽氧化温度）的第三步骤; 以及在450℃下将半导体衬底保持预定时间的第四步骤。

    SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE
    6.
    发明申请
    SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE 失效
    表面发射半导体激光器及其制造方法和电子器件的制造方法

    公开(公告)号：US20090137076A1

    公开(公告)日：2009-05-28

    申请号：US12263612

    申请日：2008-11-03

    申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

    发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

    IPC分类号： H01L21/26

    CPC分类号： H01S5/18388 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18394 ,  H01S2301/166

    摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.

    摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。

    Plane emission type semiconductor laser device and method of manufacturing the same
    7.
    发明授权
    Plane emission type semiconductor laser device and method of manufacturing the same 有权
    平面发射型半导体激光器件及其制造方法

    公开(公告)号：US07006544B2

    公开(公告)日：2006-02-28

    申请号：US10835692

    申请日：2004-04-30

    申请人： Yuichi Kuromizu ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka ,  Yoshiaki Watanabe

    发明人： Yuichi Kuromizu ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka ,  Yoshiaki Watanabe

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/18311 ,  H01S5/305 ,  H01S5/343 ,  H01S2301/166

    摘要： A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circular (100) plane upper level portion, a step portion, and an annular (100) plane lower level portion surrounding the upper level portion with the step portion therebetween. When an AlAs layer is grown as a current confinement layer on the stepped substrate while implanting Si as an n-type impurity into the AlAs layer being grown, the impurity concentration in the AlAs layer on the upper side of the upper level portion is higher than that on the upper side of the step portion, and the oxidation rate of the AlAs layer on the upper side of the upper level portion is lower than that on the upper side of the step portion, so that the progress of oxidation of the AlAs layer on the upper side of the upper level portion is autonomously restrained. By time control of the oxidation reaction of the AlAs layer, it is possible to maintain the circular AlAs layer on the upper side of the upper level portion in an unoxidized state with an accurate shape and an accurate area.

    摘要翻译： 平面发射型半导体激光器件在n型GaAs阶梯式衬底上包括下反射器，下覆层，有源层，上覆层，上反射器和p型接触层的层叠结构 层。 台阶式基板包括圆形（100）平面上部分，台阶部分和围绕上部部分的环形（100）平面下部部分，其间具有台阶部分。 当AlAs层在阶梯状衬底上生长为电流限制层，同时将Si作为n型杂质注入到正在生长的AlAs层中时，上层部分上侧的AlAs层中的杂质浓度高于 在台阶部的上侧，上层部的上侧的AlAs层的氧化速度低于台阶部的上侧的氧化速度，使得AlAs层的氧化进程 在上层部分的上侧被自主地限制。 通过对AlAs层的氧化反应进行时间控制，可以将具有精确形状和准确面积的未上氧化状态的上层部分的上侧的圆形AlAs层维持在一起。