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公开(公告)号：US07684453B2
公开(公告)日：2010-03-23
申请号：US10847904
申请日：2004-05-18
IPC分类号： H01S5/00
CPC分类号： G02B6/4296 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18388 , H01S5/18394 , H01S5/2214 , H01S5/32308 , H01S2301/18 , H01S2301/203
摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
摘要翻译： 一种表面发光半导体激光元件，包括基板，包括设置在基板上的半导体多层的下反射器，设置在下反射器上的有源层，包括设置在有源层上的半导体多层的上反射器， 化合物半导体层，具有用于暴露上反射体并在上反射体上方延伸的第一开口，以及具有第二开口的金属膜，用于暴露设置在第一开口内部并在化合物半导体层上方延伸的上反射体，其中金属 膜和化合物半导体层构成复合折射率分布结构，其中复数折射率从第二开口的中心朝向外部改变。 还提供了以单峰横向模式发射激光的方法。
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公开(公告)号：US20050014387A1
公开(公告)日：2005-01-20
申请号：US10871900
申请日：2004-06-18
IPC分类号： C23C8/02 , C23C8/16 , H01L21/316 , C23C8/10 , H01L21/331
CPC分类号： H01L21/02178 , C23C8/02 , C23C8/16 , H01L21/02233 , H01L21/02255 , H01L21/31666
摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor, which comprises: a step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a subsequent step of holding the semiconductor substrate for a predetermined time at 450° C.
摘要翻译： 本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。 提供一种蒸汽氧化方法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，其包括：将N 2气体供应到容纳半导体衬底并置换反应器内部的反应器的步骤 用N2气; 停止供给N 2气体并将N2气伴随有蒸汽的蒸气伴随的N 2气体供给到反应器的步骤; 同时提供伴随蒸气的N 2气体的半导体衬底的温度升高至450℃（蒸汽氧化温度）的步骤; 以及在450℃下将半导体衬底保持预定时间的后续步骤。
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3.发明申请SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE 失效表面发射半导体激光器及其制造方法和电子器件的制造方法公开(公告)号：US20090137076A1
公开(公告)日：2009-05-28
申请号：US12263612
申请日：2008-11-03
IPC分类号： H01L21/26
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。
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4.发明授权Plane emission type semiconductor laser device and method of manufacturing the same 有权平面发射型半导体激光器件及其制造方法公开(公告)号：US07006544B2
公开(公告)日：2006-02-28
申请号：US10835692
申请日：2004-04-30
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/18311 , H01S5/305 , H01S5/343 , H01S2301/166
摘要： A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circular (100) plane upper level portion, a step portion, and an annular (100) plane lower level portion surrounding the upper level portion with the step portion therebetween. When an AlAs layer is grown as a current confinement layer on the stepped substrate while implanting Si as an n-type impurity into the AlAs layer being grown, the impurity concentration in the AlAs layer on the upper side of the upper level portion is higher than that on the upper side of the step portion, and the oxidation rate of the AlAs layer on the upper side of the upper level portion is lower than that on the upper side of the step portion, so that the progress of oxidation of the AlAs layer on the upper side of the upper level portion is autonomously restrained. By time control of the oxidation reaction of the AlAs layer, it is possible to maintain the circular AlAs layer on the upper side of the upper level portion in an unoxidized state with an accurate shape and an accurate area.
摘要翻译： 平面发射型半导体激光器件在n型GaAs阶梯式衬底上包括下反射器，下覆层，有源层，上覆层，上反射器和p型接触层的层叠结构 层。 台阶式基板包括圆形（100）平面上部分，台阶部分和围绕上部部分的环形（100）平面下部部分，其间具有台阶部分。 当AlAs层在阶梯状衬底上生长为电流限制层，同时将Si作为n型杂质注入到正在生长的AlAs层中时，上层部分上侧的AlAs层中的杂质浓度高于 在台阶部的上侧，上层部的上侧的AlAs层的氧化速度低于台阶部的上侧的氧化速度，使得AlAs层的氧化进程 在上层部分的上侧被自主地限制。 通过对AlAs层的氧化反应进行时间控制，可以将具有精确形状和准确面积的未上氧化状态的上层部分的上侧的圆形AlAs层维持在一起。
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公开(公告)号：US07001851B2
公开(公告)日：2006-02-21
申请号：US10871900
申请日：2004-06-18
IPC分类号： H01I21/31 , H01L21/469
CPC分类号： H01L21/02178 , C23C8/02 , C23C8/16 , H01L21/02233 , H01L21/02255 , H01L21/31666
摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a second step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.
摘要翻译： 本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。 提供一种蒸汽氧化法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，并经受：向反应器壳体供应N 2气体的第一步骤 半导体衬底并用N 2气体代替反应器内部; 第二步骤是停止供应N 2气体并供应伴随着N 2气体的蒸气伴随的N 2气体，其中伴随着N 2气体 用蒸汽，到反应器; 在提供伴随蒸汽的N 2气体的同时，将半导体衬底的温度升高至450℃（蒸汽氧化温度）的第三步骤; 以及在450℃下将半导体衬底保持预定时间的第四步骤。
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6.发明申请Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效表面发射半导体激光器，其制造方法和电子器件的制造方法公开(公告)号：US20050271106A1
公开(公告)日：2005-12-08
申请号：US11143806
申请日：2005-06-02
IPC分类号： H01L21/316 , H01L21/338 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/042 , H01S5/18 , H01S5/183 , H01S5/22
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在p型Al 2 O 3上形成Al氧化物层， Ga 1-w作为p型DBR层的顶层的层，并形成像凹透镜的折射率分布。
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7.发明申请Vertical-cavity surface-emitting laser device array and method of manufacturing the same 有权垂直腔表面发射激光器件阵列及其制造方法公开(公告)号：US20050078726A1
公开(公告)日：2005-04-14
申请号：US10944386
申请日：2004-09-17
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译： 通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。 每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。 层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。 因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。
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8.发明授权Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效表面发射半导体激光器，其制造方法和电子器件的制造方法公开(公告)号：US07858410B2
公开(公告)日：2010-12-28
申请号：US12263612
申请日：2008-11-03
IPC分类号： H01L21/00
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。
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9.发明授权Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效表面发射半导体激光器，其制造方法和电子器件的制造方法公开(公告)号：US07515623B2
公开(公告)日：2009-04-07
申请号：US11143806
申请日：2005-06-02
IPC分类号： H01S5/00
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。
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10.发明授权Vertical-cavity surface-emitting laser device array and method of manufacturing the same 有权垂直腔表面发射激光器件阵列及其制造方法公开(公告)号：US07388893B2
公开(公告)日：2008-06-17
申请号：US11465338
申请日：2006-08-17
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译： 通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。 每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。 层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。 因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。
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