公开(公告)号：US20090160307A1

公开(公告)日：2009-06-25

申请号：US12094250

申请日：2007-09-18

申请人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/16 ,  H01J9/02

CPC分类号： H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.

摘要翻译： 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

公开(公告)号：US07737614B2

公开(公告)日：2010-06-15

申请号：US11665459

申请日：2006-06-19

申请人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/02 ,  H01J19/06

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.

摘要翻译： 目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ，以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的种类之一是含有2×1015cm3以上的n型杂质的n型半导体，另一种是含有2×10 15 cm -3以上的p型杂质的p型半导体， p型半导体和n型半导体结合在一起，加热部分被平行于接合面激励并被一对电流引入端直接加热，并且一些引入的电子从电子发射部分发射。

公开(公告)号：US20090120366A1

公开(公告)日：2009-05-14

申请号：US12294212

申请日：2007-01-29

申请人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： C23C16/54

CPC分类号： C30B25/105 ,  C23C16/24 ,  C23C16/511 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32238

摘要： The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.

摘要翻译： 本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。 微波等离子体CVD装置包括：真空室1，其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗22; 以及用于将微波引入真空室的天线部分25，天线部分由位于波导中心的圆棒部分23，开口部分和电介质窗口构成，电极部分24保持 电极部分和真空室上部之间的电介质窗口用于真空保持，其中电极部分24的端面形成为比电介质窗口宽，使得电介质窗口被隐藏，并且具有预定尺寸的凹部 形成在电极部分24的面对真空室的中心的表面上。

公开(公告)号：US20080048544A1

公开(公告)日：2008-02-28

申请号：US11665459

申请日：2006-06-19

申请人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/15

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm-3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.

摘要翻译： 目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ，以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的类型之一是在2×10 15 cm 3以上含有n型杂质的n型半导体，另一种是含有 在2×10 15 cm -3以上的p型杂质，p型半导体和n型半导体结合在一起，加热部分被平行于 并且由一对电流引入端子直接加热，并且一部分引入的电子从电子发射部分发射。

公开(公告)号：US07898161B2

公开(公告)日：2011-03-01

申请号：US12095430

申请日：2007-06-27

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/02

CPC分类号： H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.

摘要翻译： 目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。 因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。 根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大 大于0.1 mm2。

公开(公告)号：US07863805B2

公开(公告)日：2011-01-04

申请号：US11665472

申请日：2006-06-19

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/02 ,  H01J9/02 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.

摘要翻译： 可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。 金刚石电子放电阴极至少在其一部分具有单晶金刚石。 金刚石电子发射阴极具有包括锐化部分和加热部分的柱状。 锐化部分具有电子发射部分。 电子发射部分和加热部分由金刚石半导体形成，其由含有2×10 15 cm -3的p型杂质或以上的p型半导体形成。 电子发射部分具有半导体。 在电子发射阴极的表面上形成金属层。 金属层至少存在于加热部的一部分。 从电子发射部到最接近金属层末端的位置的距离为500μm。 一对电流引入端子向加热部分供电以加热加热部分。 引入的电子的一部分从电子发射部分发射。

公开(公告)号：US20090169814A1

公开(公告)日：2009-07-02

申请号：US12282137

申请日：2007-12-26

申请人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： C30B23/00 ,  H01L21/322 ,  B32B9/00 ,  B32B5/00

CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B25/105 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/30

摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.

摘要翻译： 在磷原子/碳原子比为3的条件下，在{111}单晶衬底的主面上，在300K下生长电阻率为300Ω/ cm以下的低电阻磷掺杂外延薄膜的方法 ％以上，包括主表面的偏角为0.50°以上。 具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率 电阻磷掺杂金刚石外延薄膜在300K时为300Ω·cm以下。

公开(公告)号：US20090160308A1

公开(公告)日：2009-06-25

申请号：US12095430

申请日：2007-06-27

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/304

CPC分类号： H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.

摘要翻译： 目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。 因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。 根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大 大于0.1 mm2。

公开(公告)号：US20080067493A1

公开(公告)日：2008-03-20

申请号：US11665472

申请日：2006-06-19

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/30 ,  C30B29/04 ,  H01L29/06

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2×1015 cm−3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 μm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

摘要翻译： 本发明的目的是提供一种使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置以及真空管，特别是电子显微镜和 电子束曝光装置，以及使用这种阴极和源的电子装置。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石。 金刚石电子发射阴极具有锐化锐角部分和加热部分的柱状。 一个电子发射部分设置在锐化的尖锐部分。 电子发射部分和加热部分包括金刚石半导体。 金刚石半导体是具有2×10 15 -3 -3以上的p型杂质的p型半导体。 半导体存在于电子发射部分中。 在电子发射阴极的表面上形成金属层。 金属层存在于加热部分的至少一部分中。 从电子发射部到金属层的端部的最短距离为500μm以下。 通过一对电流导入端子向加热部供给加热用电流，能够从电子发射部射出一些导入的电子。

公开(公告)号：US08119241B2

公开(公告)日：2012-02-21

申请号：US12282137

申请日：2007-12-26

申请人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： C30B29/04

CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B25/105 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/30

摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.

摘要翻译： 一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比 为3％以上，主偏离角为0.50°以上的主表面。 具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率 电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。