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    COMPOSITIONS AND METHODS FOR BARRIER LAYER POLISHING
    1.
    发明申请
    COMPOSITIONS AND METHODS FOR BARRIER LAYER POLISHING 审中-公开
    用于障碍层抛光的组合物和方法

    公开(公告)号：US20100096360A1

    公开(公告)日：2010-04-22

    申请号：US12579860

    申请日：2009-10-15

    申请人： You Wang ,  Yuchun Wang ,  Yan Wang ,  Kuo-Lih Chang ,  Jin Xu ,  Wen-Chaing Tu

    发明人： You Wang ,  Yuchun Wang ,  Yan Wang ,  Kuo-Lih Chang ,  Jin Xu ,  Wen-Chaing Tu

    IPC分类号： C09K13/00 ,  C23F1/02

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    摘要： Methods and apparatus are provided for polishing barrier layer materials. In one embodiment, a composition is provided for removing at least a barrier material from a substrate surface, including includes a base composition, a silica abrasive, a solvent, a pH between about 7 and about 10, and one or more components selected from the group of a metal passivating compound, an oxidizer, and an alumina abrasive. The composition may be used to chemical mechanical polishing process a substrate surface having a ruthenium-based barrier and one or more material selected from the group of a polysilicon layer, a dielectric layer, or metal layer.

    摘要翻译： 提供了用于抛光阻挡层材料的方法和装置。 在一个实施方案中，提供了用于从基材表面去除至少阻挡材料的组合物，包括基础组合物，二氧化硅磨料，溶剂，约7至约10的pH以及选自下列的一种或多种组分 一组金属钝化剂，氧化剂和氧化铝磨料。 该组合物可以用于化学机械抛光工艺，其具有钌基阻挡层和选自多晶硅层，电介质层或金属层的一种或多种材料的衬底表面。

    Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery
    4.
    发明授权
    Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery 有权
    化学机械抛光的抛光和缺陷控制使用实时可调添加剂递送

    公开(公告)号：US08210900B2

    公开(公告)日：2012-07-03

    申请号：US12263237

    申请日：2008-10-31

    申请人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    发明人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/00

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

    摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

    DISHING AND DEFECT CONTROL OF CHEMICAL MECHANICAL POLISHING USING REAL-TIME ADJUSTABLE ADDITIVE DELIVERY
    7.
    发明申请
    DISHING AND DEFECT CONTROL OF CHEMICAL MECHANICAL POLISHING USING REAL-TIME ADJUSTABLE ADDITIVE DELIVERY 有权
    使用实时可调式添加剂进行化学机械抛光的抛光和缺陷控制

    公开(公告)号：US20100112903A1

    公开(公告)日：2010-05-06

    申请号：US12263237

    申请日：2008-10-31

    申请人： WEN-CHIANG TU ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    发明人： WEN-CHIANG TU ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/04 ,  B24B7/22 ,  B24B57/02

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

    摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

    Chemical planarization of copper wafer polishing
    8.
    发明授权
    Chemical planarization of copper wafer polishing 有权
    铜晶片抛光的化学平面化

    公开(公告)号：US08586481B2

    公开(公告)日：2013-11-19

    申请号：US13105658

    申请日：2011-05-11

    申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

    发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

    摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

    摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

    CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING
    10.
    发明申请
    CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
    铜波抛光的化学平面化

    公开(公告)号：US20110294293A1

    公开(公告)日：2011-12-01

    申请号：US13105658

    申请日：2011-05-11

    申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

    发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

    IPC分类号： H01L21/306

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

    摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

    摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。