利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

45 条记录 (耗时 0.023 秒)

    Non-Volatile Memory Devices and Manufacturing Methods Thereof
    2.
    发明申请
    Non-Volatile Memory Devices and Manufacturing Methods Thereof 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20150132915A1

    公开(公告)日：2015-05-14

    申请号：US14457220

    申请日：2014-08-12

    申请人： Jin Taek Park ,  Young Woo Park ,  Jae Duk Lee

    发明人： Jin Taek Park ,  Young Woo Park ,  Jae Duk Lee

    IPC分类号： H01L29/66 ,  H01L27/115

    CPC分类号： H01L29/513 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42364 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7789 ,  H01L29/7926

    摘要： There is provided a method of manufacturing a non-volatile memory device including: alternatively stacking a plurality of insulating layers and a plurality of conductive layers on a top surface of a substrate; forming an opening that exposes the top surface of the substrate and lateral surfaces of the insulating layers and the conductive layers; forming an anti-oxidation layer on at least the exposed lateral surfaces of the conductive layers; forming a gate dielectric layer on the anti-oxidation layer, the gate dielectric layer including a blocking layer, an electric charge storage layer, and a tunneling layer that are sequentially formed on the anti-oxidation layer; and forming a channel region on the tunneling layer

    摘要翻译： 提供了一种制造非易失性存储器件的方法，包括：在衬底的顶表面上交替堆叠多个绝缘层和多个导电层; 形成露出所述基板的顶表面和所述绝缘层和所述导电层的侧表面的开口; 在所述导电层的至少暴露的侧表面上形成抗氧化层; 在所述抗氧化层上形成栅介电层，所述栅极介电层包括依次形成在所述抗氧化层上的阻挡层，电荷存储层和隧穿层; 以及在隧道层上形成沟道区

    Non-volatile memory devices and manufacturing methods thereof
    3.
    发明授权
    Non-volatile memory devices and manufacturing methods thereof 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US09564519B2

    公开(公告)日：2017-02-07

    申请号：US14457220

    申请日：2014-08-12

    申请人： Jin Taek Park ,  Young Woo Park ,  Jae Duk Lee

    发明人： Jin Taek Park ,  Young Woo Park ,  Jae Duk Lee

    IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/792 ,  H01L27/115 ,  G11C16/04

    CPC分类号： H01L29/513 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42364 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7789 ,  H01L29/7926

    摘要： There is provided a method of manufacturing a non-volatile memory device including: alternatively stacking a plurality of insulating layers and a plurality of conductive layers on a top surface of a substrate; forming an opening that exposes the top surface of the substrate and lateral surfaces of the insulating layers and the conductive layers; forming an anti-oxidation layer on at least the exposed lateral surfaces of the conductive layers; forming a gate dielectric layer on the anti-oxidation layer, the gate dielectric layer including a blocking layer, an electric charge storage layer, and a tunneling layer that are sequentially formed on the anti-oxidation layer; and forming a channel region on the tunneling layer.

    摘要翻译： 提供了一种制造非易失性存储器件的方法，包括：在衬底的顶表面上交替堆叠多个绝缘层和多个导电层; 形成露出所述基板的顶表面和所述绝缘层和所述导电层的侧表面的开口; 在所述导电层的至少暴露的侧表面上形成抗氧化层; 在所述抗氧化层上形成栅介电层，所述栅极介电层包括依次形成在所述抗氧化层上的阻挡层，电荷存储层和隧穿层; 以及在隧道层上形成沟道区。

    ANTI-C-MET ANTIBODY HAVING HGF ACTIVITY AND USE THEREOF
    6.
    发明申请
    ANTI-C-MET ANTIBODY HAVING HGF ACTIVITY AND USE THEREOF 有权
    具有HGF活性的抗C-MET抗体及其用途

    公开(公告)号：US20140193431A1

    公开(公告)日：2014-07-10

    申请号：US14123533

    申请日：2012-06-04

    申请人： Young Woo Park ,  KiWon Jo ,  Chan Woong Park ,  Seok Ho Yoo ,  Myeoung Hee Jang ,  Hye Nan Kim ,  Seon Ha Yun ,  Kyu Won Cho ,  Mi Ra Park

    发明人： Young Woo Park ,  KiWon Jo ,  Chan Woong Park ,  Seok Ho Yoo ,  Myeoung Hee Jang ,  Hye Nan Kim ,  Seon Ha Yun ,  Kyu Won Cho ,  Mi Ra Park

    IPC分类号： C07K16/28

    CPC分类号： C07K16/2863 ,  A61K2039/505 ,  C07K2317/21 ,  C07K2317/622 ,  C07K2317/75 ,  C07K2317/92 ,  C07K2317/94

    摘要： Disclosed are a human antibody comprising a human complementarity-determining region (CDR), which binds specifically to c-Met, and a framework region (FR), a polynucleotide encoding the human antibody, an expression vector comprising the polynucleotide, a transformant transformed with the expression vector, a method of producing the human antibody B7 by culturing the transformant, a wound healing composition comprising the human antibody as an active ingredient, a cell regeneration composition comprising the antibody as an active ingredient, and a drug conjugate comprising a drug linked to the human antibody. The c-Met-specific human antibody can function as an HGF mimic that can be used as a wound healing composition. The antibody can be widely used to determine the treatment and prognosis of various diseases, including neuronal infarction, progressive nephropathy, liver cirrhosis, lung fibrosis, kidney injury, liver injury, lung injury, and ulcerative wounds, which are treated by activation of HGF or c-Met.

    摘要翻译： 公开了包含与c-Met特异性结合的人互补决定区（CDR）的人抗体和框架区（FR），编码人抗体的多核苷酸，包含多核苷酸的表达载体，转化了 表达载体，通过培养转化体生产人抗体B7的方法，包含人抗体作为活性成分的伤口愈合组合物，包含抗体作为活性成分的细胞再生组合物和包含药物连接的药物偶联物 对人抗体。 c-Met特异性人抗体可用作可用作伤口愈合组合物的HGF模拟物。 该抗体可广泛用于确定通过激活HGF或其他疾病治疗的各种疾病的治疗和预后，包括神经元梗死，进行性肾病，肝硬化，肺纤维化，肾损伤，肝损伤，肺损伤和溃疡性创伤 c-Met。