Apparatus and method for variable fast fourier transform
    1.
    发明授权
    Apparatus and method for variable fast fourier transform 有权
    用于可变快速傅里叶变换的装置和方法

    公开(公告)号:US08510362B2

    公开(公告)日:2013-08-13

    申请号:US12517781

    申请日:2007-06-18

    IPC分类号: G06F17/14

    CPC分类号: G06F17/142

    摘要: The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.

    摘要翻译: 本发明涉及一种用于可变快速傅里叶变换的装置和方法。 根据本发明的实施例,使用两个n点快速傅里叶变换(FFT)处理器来产生两个n点FFT输出数据或一个2n点FFT输出数据。 一个2n点输入数据交替地输入到两个n点FFT处理器。 两个n点FFT处理器中的每一个为n点输入数据或2n点输入数据选择旋转因子,并执行快速傅里叶变换。 对通过对2n点输入数据信号执行快速傅里叶变换获得的信号执行蝶形运算,并且处理的信号以输出顺序对准。 根据该结构,能够实现在支持多频分配的基站系统中选择性地进行多频分配的快速傅里叶变换硬件引擎。

    APPARATUS AND METHOD FOR VARIABLE FAST FOURIER TRANSFORM
    2.
    发明申请
    APPARATUS AND METHOD FOR VARIABLE FAST FOURIER TRANSFORM 有权
    用于可变快速傅立叶变换的装置和方法

    公开(公告)号:US20100011046A1

    公开(公告)日:2010-01-14

    申请号:US12517781

    申请日:2007-06-18

    IPC分类号: G06F17/14

    CPC分类号: G06F17/142

    摘要: The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.

    摘要翻译: 本发明涉及一种用于可变快速傅里叶变换的装置和方法。 根据本发明的实施例,使用两个n点快速傅里叶变换(FFT)处理器来产生两个n点FFT输出数据或一个2n点FFT输出数据。 一个2n点输入数据交替地输入到两个n点FFT处理器。 两个n点FFT处理器中的每一个为n点输入数据或2n点输入数据选择旋转因子,并执行快速傅里叶变换。 对通过对2n点输入数据信号执行快速傅里叶变换获得的信号执行蝶形运算,并且处理的信号以输出顺序对准。 根据该结构,能够实现在支持多频分配的基站系统中选择性地进行多频分配的快速傅里叶变换硬件引擎。

    Polysilicon thin film transistor array panel and manufacturing method thereof
    4.
    发明授权
    Polysilicon thin film transistor array panel and manufacturing method thereof 有权
    多晶硅薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US09005697B2

    公开(公告)日:2015-04-14

    申请号:US11866617

    申请日:2007-10-03

    摘要: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,其包括:在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极,其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

    RESOURCE ALLOCATION AND POWER CONTROL METHOD
    7.
    发明申请
    RESOURCE ALLOCATION AND POWER CONTROL METHOD 有权
    资源分配与功率控制方法

    公开(公告)号:US20100279700A1

    公开(公告)日:2010-11-04

    申请号:US12770124

    申请日:2010-04-29

    IPC分类号: H04W72/04 H04W24/00 H04W52/00

    摘要: A method for controlling transmission power in a mobile communication system is provided. According to the method, a serving base station arranges a plurality of terminals in ascending order according to Carrier-to-Interference-and-Noise-Ratios (CINRs) based on the CINR measured by the plurality of terminals, classifies the plurality of terminals in one of a first group and a second group according to the order, allocates a subchannel of a data region corresponding to the first group from among a plurality of data regions included in the uplink frame to a terminal classified as the first group, and allocates a subchannel of a data region corresponding to the second group from among the data regions to a terminal classified as the second group.

    摘要翻译: 提供一种用于控制移动通信系统中的发送功率的方法。 根据该方法,服务基站基于由多个终端测量的CINR,根据载波干扰比(CINR)按升序排列多个终端,对多个终端进行分类 根据该顺序的第一组和第二组中的一个,将从上行链路帧中包括的多个数据区域中的与第一组对应的数据区域的子信道分配给分类为第一组的终端,并且分配 将与第二组对应的数据区域的子信道从数据区域分配给分类为第二组的终端。

    Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
    8.
    发明授权
    Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
    具有三部分栅电极的薄膜晶体管和使用其的液晶显示器

    公开(公告)号:US07791076B2

    公开(公告)日:2010-09-07

    申请号:US12469256

    申请日:2009-05-20

    IPC分类号: H01L21/00

    摘要: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.

    摘要翻译: 一种薄膜晶体管和液晶显示器,其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分,以使TFT的电荷迁移率均匀,而不增加驱动尺寸 电路。 根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。 半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。 栅极绝缘层覆盖半导体图案。 在栅极绝缘层上形成栅电极,该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分,与沟道区重叠。 在液晶显示器中,形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜,每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸 并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极,其具有与其它薄膜晶体管不同的图案。

    MASK FOR FORMING POLYSILICON AND A METHOD FOR FABRICATING THIN FILM TRANSISTOR USING THE SAME
    9.
    发明申请
    MASK FOR FORMING POLYSILICON AND A METHOD FOR FABRICATING THIN FILM TRANSISTOR USING THE SAME 有权
    用于形成多晶硅的掩模和使用其制造薄膜晶体管的方法

    公开(公告)号:US20080166892A1

    公开(公告)日:2008-07-10

    申请号:US12016430

    申请日:2008-01-18

    IPC分类号: H01L21/428

    摘要: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask

    摘要翻译: 提供了一种用于将非晶硅结晶成多晶硅的掩模。 掩模包括用于限定要被照射的区域的多个狭缝图案。 沿着纵向第一方向形成多个狭缝图案,并且掩模沿纵向第二方向移动。 第一纵向方向基本上垂直于第二纵向方向。 每个分割图案与另一个分开的图案偏离大致相同的距离。 因此,使用掩模的多晶硅

    Device for irradiating a laser beam
    10.
    发明申请
    Device for irradiating a laser beam 有权
    用于照射激光束的装置

    公开(公告)号:US20080070386A1

    公开(公告)日:2008-03-20

    申请号:US11983103

    申请日:2007-11-06

    IPC分类号: H01L21/20

    摘要: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

    摘要翻译: 用于将激光束照射到形成在基板上的非晶硅薄膜上的装置。 该装置包括:安装基板的台架; 用于产生激光束的激光振荡器; 用于将激光束聚焦并引导到薄膜上的投影透镜; 用于反射引导到薄膜上的激光束的反射器; 用于控制所述反射器的位置的控制器; 以及用于吸收由反射器反射的激光束的吸收体。