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    Method of forming an oxide layer including increasing the temperature during oxidation
    1.
    发明授权
    Method of forming an oxide layer including increasing the temperature during oxidation 有权
    形成氧化物层的方法包括在氧化期间增加温度

    公开(公告)号：US07297620B2

    公开(公告)日：2007-11-20

    申请号：US10839934

    申请日：2004-05-06

    申请人： Young-Sub You ,  Hun-Hyeoung Leam ,  Seok-Woo Nam ,  Bong-Hyun Kim ,  Woong Lee ,  Sang-Hoon Lee

    发明人： Young-Sub You ,  Hun-Hyeoung Leam ,  Seok-Woo Nam ,  Bong-Hyun Kim ,  Woong Lee ,  Sang-Hoon Lee

    IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/0223 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

    摘要： In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.

    摘要翻译： 在形成氧化物层和氧氮化物层的方法中，将衬底装载到具有第一压力和第一温度的反应室中。 使用反应气体在基板上形成氧化物层，同时在第二压力下将反应室的温度从第一温度升至第二温度。 此外，氧化物层在反应室中被硝化以在衬底上形成氧氮化物层。 当在衬底上形成氧化物层和/或氧氮化物层时，可以容易地在氧化物层或氧氮化物层上形成半导体器件（例如DRAM器件，SRAM器件或LOGIC器件）的微小图案。

    Method of forming an oxinitride layer
    2.
    发明申请
    Method of forming an oxinitride layer 有权
    形成氮氧化物层的方法

    公开(公告)号：US20080090424A1

    公开(公告)日：2008-04-17

    申请号：US11973042

    申请日：2007-10-05

    申请人： Young-Sub You ,  Hun-Hyeoung Leam ,  Seok-Woo Nam ,  Bong-Hyun Kim ,  Woong Lee ,  Sang-Hoon Lee

    发明人： Young-Sub You ,  Hun-Hyeoung Leam ,  Seok-Woo Nam ,  Bong-Hyun Kim ,  Woong Lee ,  Sang-Hoon Lee

    IPC分类号： H01L21/469

    CPC分类号： H01L21/0223 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

    摘要： In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.

    摘要翻译： 在形成氧化物层和氧氮化物层的方法中，将衬底装载到具有第一压力和第一温度的反应室中。 使用反应气体在基板上形成氧化物层，同时在第二压力下将反应室的温度从第一温度升至第二温度。 此外，氧化物层在反应室中被硝化以在衬底上形成氧氮化物层。 当在衬底上形成氧化物层和/或氧氮化物层时，可以容易地在氧化物层或氧氮化物层上形成半导体器件（例如DRAM器件，SRAM器件或LOGIC器件）的微小图案。

    Method for forming capacitor using etching stopper film in semiconductor memory
    7.
    发明申请
    Method for forming capacitor using etching stopper film in semiconductor memory 审中-公开
    在半导体存储器中使用蚀刻阻挡膜形成电容器的方法

    公开(公告)号：US20050153518A1

    公开(公告)日：2005-07-14

    申请号：US11012403

    申请日：2004-12-15

    申请人： Young-Sub You ,  Jung-Hwan Oh ,  Ki-Su Na ,  Seok-Woo Nam ,  Hun-Hyeoung Leam

    发明人： Young-Sub You ,  Jung-Hwan Oh ,  Ki-Su Na ,  Seok-Woo Nam ,  Hun-Hyeoung Leam

    IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/20

    CPC分类号： H01L28/91 ,  H01L27/10852

    摘要： A method for forming a capacitor comprises forming a supporting insulating film, an etching stopper film made of alumina series or hafnium oxide series, and a mold insulating film on a surface of a semiconductor substrate having a first structure including conductive plugs surrounded by a first insulating film, patterning the mold insulating film, the etching stopper film and the supporting insulating film to form openings that expose the conductive plugs, forming a storage node conductive film electrically connected to the conductive plugs on the surface of the semiconductor substrate having the openings formed therein and concurrently annealing the etching stopper film, separating the storage node conductive film to form a plurality of storage nodes, exposing at least a part of an outer surface of the storage node by selectively etching remaining mold insulating film, which is exposed by the separated storage node conductive film, until the etching stopper film is exposed, and forming a plurality of plate nodes on the plurality of storage nodes with a dielectric film disposed therebetween.

    摘要翻译： 一种形成电容器的方法，包括形成支撑绝缘膜，由氧化铝系列或氧化铪系列制成的蚀刻阻挡膜，以及在具有第一结构的半导体衬底的表面上的模具绝缘膜，该第一结构包括由第一绝缘体 膜，图案化模具绝缘膜，蚀刻停止膜和支撑绝缘膜，以形成露出导电插塞的开口，形成与其上形成有开口的半导体衬底的表面上的导电插塞电连接的存储节点导电膜 并且同时退火所述蚀刻停止膜，分离所述存储节点导电膜以形成多个存储节点，通过选择性地蚀刻剩余的模制绝缘膜，暴露所述存储节点的外表面的至少一部分， 节点导电膜，直到蚀刻停止膜暴露，并形成 g多个存储节点上的多个平板节点，其间设置介电膜。

    Floating gate memory device and method of manufacturing the same
    8.
    发明授权
    Floating gate memory device and method of manufacturing the same 有权
    浮栅存储器件及其制造方法

    公开(公告)号：US07524747B2

    公开(公告)日：2009-04-28

    申请号：US11371897

    申请日：2006-03-08

    申请人： Young-Sub You ,  Hun-Hyeoung Leam ,  Sang-Hoon Lee

    发明人： Young-Sub You ,  Hun-Hyeoung Leam ,  Sang-Hoon Lee

    IPC分类号： H01L21/4763

    CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L21/324 ,  H01L27/115 ,  H01L29/42324 ,  Y10S438/926

    摘要： Disclosed herein is a method of forming a floating gate in a non-volatile memory device having a self-aligned shallow trench isolation (SA-STI) structure. First, a tunnel oxide layer is formed on a semiconductor substrate having a SA-STI structure. Next, a first floating gate layer is formed on the tunnel oxide layer at a first temperature of no less than about 530° C. A second floating gate layer is then formed on the first floating gate layer at a second temperature of no more than 580° C. After depositing the first floating gate layer, the second floating gate layer is in-situ deposited to prevent the growth of a native oxide layer on the surface of the first floating gate layer. Thus, gate resistance can be reduced and process time can be shortened.

    摘要翻译： 本文公开了一种在具有自对准浅沟槽隔离（SA-STI）结构的非易失性存储器件中形成浮置栅极的方法。 首先，在具有SA-STI结构的半导体衬底上形成隧道氧化层。 接下来，在不少于约530℃的第一温度下在隧道氧化物层上形成第一浮栅层。然后在不大于580°的第二温度下在第一浮栅上形成第二浮栅层 在沉积第一浮栅之后，第二浮栅层被原位沉积以防止第一浮栅层表面上的自然氧化物层的生长。 因此，可以减小栅极电阻，并且可以缩短处理时间。