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    Thin film transistor array panel and method for manufacturing the same
    1.
    发明授权
    Thin film transistor array panel and method for manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08174020B2

    公开(公告)日：2012-05-08

    申请号：US12556277

    申请日：2009-09-09

    申请人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

    发明人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

    IPC分类号： H01L27/14

    CPC分类号： H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248

    摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

    摘要翻译： 根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

    Thin film transistor array panel and method for manufacturing the same
    2.
    发明授权
    Thin film transistor array panel and method for manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08389998B2

    公开(公告)日：2013-03-05

    申请号：US13444768

    申请日：2012-04-11

    申请人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

    发明人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

    IPC分类号： H01L27/14

    CPC分类号： H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248

    摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

    摘要翻译： 根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20120193634A1

    公开(公告)日：2012-08-02

    申请号：US13444768

    申请日：2012-04-11

    申请人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

    发明人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jong-In Kim

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248

    摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

    摘要翻译： 根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20100140610A1

    公开(公告)日：2010-06-10

    申请号：US12556277

    申请日：2009-09-09

    申请人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jang-In Kim

    发明人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Ki-Won Kim ,  Jang-In Kim

    IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L21/336

    CPC分类号： H01L29/66742 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248

    摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

    摘要翻译： 根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

    Thin film transistor substrate and a fabricating method thereof
    5.
    发明授权
    Thin film transistor substrate and a fabricating method thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US08097881B2

    公开(公告)日：2012-01-17

    申请号：US12502653

    申请日：2009-07-14

    申请人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Jong-In Kim

    发明人： Young-Wook Lee ,  Hong-Suk Yoo ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  Jong-In Kim

    IPC分类号： H01L29/76 ,  H01L29/04 ,  H01L31/036 ,  H01L27/01 ,  H01L27/12

    CPC分类号： H01L29/7869 ,  H01L27/1225

    摘要： An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the data line and the gate line defining a display region, a first opening exposing a surface of the data line, a second opening exposing a surface of the oxide semiconductor pattern, and a drain electrode disposed on the first opening and a drain electrode pad, the drain electrode extending from the first opening to the second opening and electrically connecting the drain electrode pad and the oxide semiconductor pattern.

    摘要翻译： 氧化物半导体薄膜晶体管基板包括栅极线和设置在绝缘基板上的栅电极，邻近栅电极设置的氧化物半导体图案，与栅极线电绝缘的数据线，数据线和限定线 显示区域，暴露数据线的表面的第一开口，暴露氧化物半导体图案的表面的第二开口和设置在第一开口上的漏电极和漏电极焊盘，漏电极从第一开口延伸 到第二开口并电连接漏电极焊盘和氧化物半导体图案。

    Thin film transistor array panel and manufacturing method of the same
    6.
    发明授权
    Thin film transistor array panel and manufacturing method of the same 有权
    薄膜晶体管阵列及其制造方法相同

    公开(公告)号：US09046727B2

    公开(公告)日：2015-06-02

    申请号：US12414932

    申请日：2009-03-31

    申请人： Kwang-Ho Lee ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Sang-Soo Kim ,  Shi-Yul Kim ,  Jae-Hyoung Youn

    发明人： Kwang-Ho Lee ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Sang-Soo Kim ,  Shi-Yul Kim ,  Jae-Hyoung Youn

    IPC分类号： H01L33/00 ,  H01L21/28 ,  G02F1/1362 ,  G02F1/1339 ,  H01L27/12

    CPC分类号： H01L27/124 ,  G02F1/13394 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1262

    摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

    摘要翻译： 薄膜晶体管（“TFT”）阵列面板包括： 绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括 横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及 设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分 钝化层。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20100051951A1

    公开(公告)日：2010-03-04

    申请号：US12414932

    申请日：2009-03-31

    申请人： Kwang-Ho Lee ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Sang-Soo Kim ,  Shi-Yul Kim ,  Jae-Hyoung Youn

    发明人： Kwang-Ho Lee ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Sang-Soo Kim ,  Shi-Yul Kim ,  Jae-Hyoung Youn

    IPC分类号： H01L33/00 ,  H01L21/28

    CPC分类号： H01L27/124 ,  G02F1/13394 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1262

    摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

    摘要翻译： 薄膜晶体管（“TFT”）阵列面板包括： 绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括 横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及 设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分 钝化层。

    Liquid crystal display device
    9.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US08648985B2

    公开(公告)日：2014-02-11

    申请号：US12612620

    申请日：2009-11-04

    申请人： Yong-Hwan Kim ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Seung-Soo Baek ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Jong-In Kim ,  Sang-Hee Jang

    发明人： Yong-Hwan Kim ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Seung-Soo Baek ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Jong-In Kim ,  Sang-Hee Jang

    IPC分类号： G02F1/1343 ,  G02F1/1368

    CPC分类号： G02F1/136209

    摘要： The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge.

    摘要翻译： 本发明涉及一种液晶显示器。 液晶显示器具有包括具有第一像素电极和第一防漏光部件的第一像素区域，具有第二像素电极和第二防漏光部件的最终像素区域的下面板，以及设置在第二像素区域之间的中间像素区域 第一像素区域和最终像素区域，每个中间像素区域包括第一中间像素电极和第二中间像素电极。 因此，可以有效地防止在设置在边缘上的第一像素区域和最终像素区域处的光泄漏。

    Liquid crystal display and manufacturing method thereof
    10.
    发明授权
    Liquid crystal display and manufacturing method thereof 有权
    液晶显示及其制造方法

    公开(公告)号：US08564748B2

    公开(公告)日：2013-10-22

    申请号：US12611492

    申请日：2009-11-03

    申请人： Kyung-Sook Jeon ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Yong-Hwan Kim ,  Hwa-Yeul Oh ,  Jong-In Kim ,  Sang-Hee Jang

    发明人： Kyung-Sook Jeon ,  Jang-Soo Kim ,  Hong-Suk Yoo ,  Yong-Hwan Kim ,  Hwa-Yeul Oh ,  Jong-In Kim ,  Sang-Hee Jang

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133514 ,  G02F1/133516 ,  G02F1/13394 ,  G02F2001/133388

    摘要： Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.

    摘要翻译： 本发明的示例性实施例公开了液晶显示器（LCD）及其制造方法。 LCD可以具有显示区域和外围区域。 可以使用半色调掩模对周边区域的有机层进行图案化，并且可以在周边区域中形成突起构件。 因此，可以防止薄膜晶体管阵列面板和对应的基板临时粘附在周边区域中，使得可以均匀地保持填充在周边区域中的液晶分子的密度，并且液晶显示器的显示质量 可以改进。