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    METHOD AND SMART CARD FOR PROVIDING LOCATION BASED SERVICE
    1.
    发明申请
    METHOD AND SMART CARD FOR PROVIDING LOCATION BASED SERVICE 审中-公开
    方法和智能卡提供基于位置的服务

    公开(公告)号：US20110047053A1

    公开(公告)日：2011-02-24

    申请号：US12922952

    申请日：2009-02-26

    申请人： Youngmin Kim ,  Jinwook Chong ,  Sungjae Byun

    发明人： Youngmin Kim ,  Jinwook Chong ,  Sungjae Byun

    IPC分类号： G01C21/00 ,  G06Q40/00

    CPC分类号： G01S19/48 ,  G06Q40/12 ,  H04L67/18

    摘要： A method and a smart card for providing location based services are provided. The smart card connectable to a mobile terminal has a card-dedicated GPS module for receiving radio signals from one or more satellites to extract navigation data contained in the radio signals; a card-dedicated communication module for transceiving data related to the location-based services (LBS) in an interworking relationship with the mobile terminal; a card-dedicated storage module for storing map data related to the location based services and indoor map data; a card-dedicated indoor module for providing the LBS using the indoor map data; and a card-dedicated LBS platform for providing the LBS through extracting a current location of the mobile terminal using the navigation data and controlling the card-dedicated indoor module to be switched into an active state if the card-dedicated GPS module fails to receive the radio signals from the satellite.

    摘要翻译： 提供了一种用于提供基于位置的服务的方法和智能卡。 可连接到移动终端的智能卡具有卡专用GPS模块，用于从一个或多个卫星接收无线电信号，以提取无线电信号中包含的导航数据; 卡专用通信模块，用于以与所述移动终端的交互关系收发与所述基于位置的服务（LBS）相关的数据; 用于存储与基于位置的服务和室内地图数据相关的地图数据的卡专用存储模块; 专用室内模块，用于使用室内地图数据提供LBS; 以及卡专用的LBS平台，用于通过使用导航数据提取移动终端的当前位置来提供LBS，并且如果卡专用GPS模块不能接收到的话，则控制卡专用室内模块被切换到活动状态 来自卫星的无线电信号。

    Multifunctional doped conducting polymer-based field effect devices
    7.
    发明申请
    Multifunctional doped conducting polymer-based field effect devices 审中-公开
    多功能掺杂导电聚合物基场效应器件

    公开(公告)号：US20060240324A1

    公开(公告)日：2006-10-26

    申请号：US11089676

    申请日：2005-03-25

    申请人： Arthur Epstein ,  Oliver Waldmann ,  June Hyoung Park ,  Nan-Rong Chiou ,  Youngmin Kim

    发明人： Arthur Epstein ,  Oliver Waldmann ,  June Hyoung Park ,  Nan-Rong Chiou ,  Youngmin Kim

    IPC分类号： H01M4/60 ,  H01M4/58 ,  H01L27/12

    CPC分类号： H01L51/052 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0545 ,  H01L51/105

    摘要： Electric field driven devices and methods of operation are provided. Each device use one or more doped conducting polymers to provide multifunctional responses to applied electric field. The device includes an electrically conductive layer operative to provide a gate contact for the device; a conducting polymer layer operative to provide source and drain contacts for the device, and an active layer; and an insulating polymer layer formed between the electrically conductive layer and the conducting polymer layer, wherein the layers in combination allow the device to be operative to perform at least two of a plurality of response functions.

    摘要翻译： 提供电场驱动装置和操作方法。 每个器件使用一种或多种掺杂的导电聚合物来提供对施加的电场的多功能响应。 该装置包括可操作地为装置提供栅极接触的导电层; 可操作地提供用于所述装置的源极和漏极触点的导电聚合物层和有源层; 以及形成在所述导电层和所述导电聚合物层之间的绝缘聚合物层，其中所述层组合允许所述装置可操作以执行多个响应函数中的至少两个。

    Tunable sidewall spacer process for CMOS integrated circuits
    8.
    发明申请
    Tunable sidewall spacer process for CMOS integrated circuits 审中-公开
    CMOS集成电路的可调谐侧壁间隔工艺

    公开(公告)号：US20050164443A1

    公开(公告)日：2005-07-28

    申请号：US11084473

    申请日：2005-03-18

    申请人： Youngmin Kim ,  Shawn Walsh

    发明人： Youngmin Kim ,  Shawn Walsh

    IPC分类号： H01L21/8238 ,  H01L21/301 ,  H01L21/46 ,  H01L21/78

    CPC分类号： H01L21/823864 ,  H01L21/823814

    摘要： A mixed voltage CMOS process for high reliability and high performance core transistors and input-output transistors with reduced mask steps. A gate stack (30) is formed over the silicon substrate (10). Ion implantation is performed of a first species and a second species to produce the doping profiles (70, 80, 90, 100) in the input-output transistors.

    摘要翻译： 用于高可靠性和高性能核心晶体管和输入输出晶体管的混合电压CMOS工艺，减少了掩模步骤。 在硅衬底（10）上形成栅叠层（30）。 对第一种和第二种进行离子注入，以在输入输出晶体管中产生掺杂分布（70,80,90,100）。

    Transistors having selectively doped channel regions
    9.
    发明授权
    Transistors having selectively doped channel regions 有权
    具有选择性掺杂沟道区的晶体管

    公开(公告)号：US06730555B2

    公开(公告)日：2004-05-04

    申请号：US10153033

    申请日：2002-05-22

    申请人： Youngmin Kim ,  Amitava Chatterjee

    发明人： Youngmin Kim ,  Amitava Chatterjee

    IPC分类号： H01L218238

    CPC分类号： H01L21/823842

    摘要： An integrated semiconductor system is provided that is formed on a substrate 10. A dual implant mask 26 is used to change the characteristics of semiconductor devices formed in regions of the substrate 10 having different characteristics. Transistors 50 and 52 can be formed on the same substrate 10 and have different electrical characteristics.

    摘要翻译： 提供了形成在基板10上的集成半导体系统。双注入掩模26用于改变在具有不同特性的基板10的区域中形成的半导体器件的特性。 晶体管50和52可以形成在相同的基板10上并且具有不同的电特性。