公开(公告)号：US07230685B2

公开(公告)日：2007-06-12

申请号：US11007258

申请日：2004-12-09

申请人： Yousuke Suzuki ,  Hitoshi Yamada ,  Ryoichi Sugawara ,  Naoki Sano

发明人： Yousuke Suzuki ,  Hitoshi Yamada ,  Ryoichi Sugawara ,  Naoki Sano

IPC分类号： G01C3/08

CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S7/4876 ,  G01S17/026 ,  G01S17/88 ,  G01S17/89 ,  H01L27/146

摘要： First image data including a first pixel value according to the intensity of background light is obtained by means of only exposure. Second image data including a second pixel value according to the intensity of the light reflected or scattered by an object is obtained by so controlling light emission and exposure as to receive part of the reflected or scattered light over the whole exposure period. The part of the reflected or scattered light corresponds to the flat period of emitted pulsed light. Third image data including a third pixel value according to the distance to the object is obtained by so controlling light emission and exposure as to receive the part of the reflected or scattered light for a time according to the distance. The first pixel value is subtracted from each of the second and third pixel values so that the influence of the background light can be excluded. The ratio between the subtraction results is calculated so that the influences of factors that vary the intensity of the reflected or scattered light can be cancelled.

摘要翻译： 通过仅曝光获得包括根据背景光的强度的第一像素值的第一图像数据。 通过控制发光和曝光以在整个曝光期间接收反射或散射光的一部分，获得包括根据被物体反射或散射的光的强度的第二像素值的第二图像数据。 反射或散射光的一部分对应于发射脉冲光的平坦周期。 通过控制发光和曝光来获得根据距离物体的距离的第三像素值的第三图像数据，以便根据距离接收反射或散射光的一部分一段时间。 从第二和第三像素值的每一个中减去第一像素值，从而可以排除背景光的影响。 计算减法结果之间的比例，以便可以消除改变反射或散射光强度的因素的影响。

公开(公告)号：US20050162638A1

公开(公告)日：2005-07-28

申请号：US11007258

申请日：2004-12-09

申请人： Yousuke Suzuki ,  Hitoshi Yamada ,  Ryoichi Sugawara ,  Naoki Sano

发明人： Yousuke Suzuki ,  Hitoshi Yamada ,  Ryoichi Sugawara ,  Naoki Sano

IPC分类号： G01B11/24 ,  G01C3/08 ,  G01S7/487 ,  G01S17/02 ,  G01S17/88 ,  G01S17/89 ,  H01L27/146 ,  H01L27/00

CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S7/4876 ,  G01S17/026 ,  G01S17/88 ,  G01S17/89 ,  H01L27/146

摘要： First image data including a first pixel value according to the intensity of background light is obtained by means of only exposure. Second image data including a second pixel value according to the intensity of the light reflected or scattered by an object is obtained by so controlling light emission and exposure as to receive part of the reflected or scattered light over the whole exposure period. The part of the reflected or scattered light corresponds to the flat period of emitted pulsed light. Third image data including a third pixel value according to the distance to the object is obtained by so controlling light emission and exposure as to receive the part of the reflected or scattered light for a time according to the distance. The first pixel value is subtracted from each of the second and third pixel values so that the influence of the background light can be excluded. The ratio between the subtraction results is calculated so that the influences of factors that vary the intensity of the reflected or scattered light can be cancelled.

摘要翻译： 通过仅曝光获得包括根据背景光的强度的第一像素值的第一图像数据。 通过控制发光和曝光以在整个曝光期间接收反射或散射光的一部分，获得包括根据被物体反射或散射的光的强度的第二像素值的第二图像数据。 反射或散射光的一部分对应于发射脉冲光的平坦周期。 通过控制发光和曝光来获得根据距离物体的距离的第三像素值的第三图像数据，以便根据距离接收反射或散射光的一部分一段时间。 从第二和第三像素值的每一个中减去第一像素值，从而可以排除背景光的影响。 计算减法结果之间的比例，以便可以消除改变反射或散射光强度的因素的影响。

公开(公告)号：US06400448B1

公开(公告)日：2002-06-04

申请号：US09696969

申请日：2000-10-27

申请人： Ryoichi Sugawara ,  Naoki Sano

发明人： Ryoichi Sugawara ,  Naoki Sano

IPC分类号： G01C308

CPC分类号： G01S7/483 ,  B60R21/0134 ,  G01S7/4863 ,  G01S17/08 ,  G01S17/89 ,  G01S17/936

摘要： A photo detecting device includes an output line leading to a processing circuit, and an array of pixels including respective photo detecting zones for changing incident light into corresponding electric signals through photoelectric conversion. Each of the pixels includes a first switch for selectively connecting and disconnecting a related photo detecting zone to and from the output line, and a second switch for selectively connecting and disconnecting the related photo detecting zone to and from a ground line. The second switch disconnects the related photo detecting zone from the ground line when the first switch connects the related photo detecting zone to the output line. The second switch connects the related photo detecting zone to the ground line when the first switch disconnects the related photo detecting zone from the output line.

摘要翻译： 光检测装置包括通向处理电路的输出线和包括用于通过光电转换将入射光改变成相应的电信号的各个光检测区的像素阵列。 每个像素包括用于有选择地将相关光电检测区域与输出线路连接和断开的第一开关，以及用于选择性地将相关光电检测区域与地线连接和断开的第二开关。 当第一个开关将相关的光电检测区域连接到输出线路时，第二个开关断开相关的光电检测区域与地线的连接。 当第一开关将相关的光电检测区域从输出线断开时，第二个开关将相关的光电检测区域连接到地线。

公开(公告)号：US06657705B2

公开(公告)日：2003-12-02

申请号：US10175508

申请日：2002-06-20

申请人： Naoki Sano ,  Emiko Isogai ,  Ryoichi Sugawara

发明人： Naoki Sano ,  Emiko Isogai ,  Ryoichi Sugawara

IPC分类号： G01B1126

CPC分类号： G01S17/42 ,  G01C3/08 ,  G01S7/4817 ,  G01S17/46 ,  G01S17/936

摘要： A distance measuring apparatus controls a forward laser beam to scan a detection area. A photodetector array includes a plurality of photo detecting elements. At least one is selected among the photo detecting elements as an effective element, and the effective element is changed from one to another in response to the direction of the forward laser beam. Identification is given of at least one among the photo detecting elements which receives an echo laser beam corresponding to the forward laser beam in a specified direction. An actual correspondence relation between directions of the forward laser beam and the photo detecting elements receiving corresponding echo laser beams is grasped on the basis of a relation between the identified photo detecting element and the specified direction. The selection and change of the effective element are executed according to the grasped actual correspondence relation.

公开(公告)号：US06251561B1

公开(公告)日：2001-06-26

申请号：US09234983

申请日：1999-01-22

申请人： Shoichi Kawai ,  Hironari Kuno ,  Naoki Sano ,  Ryoichi Sugawara

发明人： Shoichi Kawai ,  Hironari Kuno ,  Naoki Sano ,  Ryoichi Sugawara

IPC分类号： G11B724

CPC分类号： G11B7/243 ,  G11B7/24 ,  G11B7/2534 ,  G11B7/2542 ,  G11B7/2595 ,  G11B7/26 ,  G11B2007/0013 ,  G11B2007/24304 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/2432 ,  G11B2007/24322 ,  G11B2007/24324 ,  Y10S430/146

摘要： A recording film is formed by a vacuum film formation process. The recording film contains a substance which is thermally decomposed when a recording laser beam is irradiated thereto. When the substance is thermally decomposed by irradiation of the recording laser beam, a substance generated by the thermal decomposition is precipitated within the recording film, and therefore a change in complex index of refraction is caused predominantly over the raising deformation in the recording film. As a result, information is recorded in the recording film while causing almost no raising deformation of the recording film.

摘要翻译： 通过真空成膜工艺形成记录膜。 记录膜含有当照射记录激光束时热分解的物质。 当通过记录激光束的照射使物质热分解时，通过热分解产生的物质在记录膜内沉淀，因此复合折射率的变化主要是由于记录膜的升高变形引起的。 结果，信息被记录在记录膜中，同时几乎不会引起记录膜的升高变形。

公开(公告)号：US20050213303A1

公开(公告)日：2005-09-29

申请号：US11133743

申请日：2005-05-20

申请人： Minehiro Tonosaki ,  Naoki Sano ,  Takuya Makino

发明人： Minehiro Tonosaki ,  Naoki Sano ,  Takuya Makino

IPC分类号： F28D15/02 ,  G06F1/20 ,  H01L23/427 ,  H01L23/473 ,  H05K7/20

CPC分类号： H01L23/473 ,  F28D15/0266 ,  G06F1/203 ,  H01L23/427 ,  H01L2924/0002 ,  Y10T29/4935 ,  Y10T29/49353 ,  Y10T29/49359 ,  H01L2924/00

摘要： This invention provides a cooler having an excellent cooling performance, which is capable of being downsized and low-profiled, an electronic apparatus and a method for fabricating the cooler. The cooler (1) comprises lower board member (10) and upper complex board members. The lower board member (10) is made from plastic material and has a cavity portion (11) for allowing water or vapor to be circulated therein. The upper complex board members comprise board member (20) for a condenser part, upper board member (30), and board member (40) for a wick part. The board members (20) and (40) for the condenser part and the wick part, respectively, are made from metallic material having higher thermal conductivity such as copper and nickel. Each of the members has a groove for allowing them to be served as the condenser and the wick. The upper board member (30) includes an opening (32) or (34) for allowing the board member (20) or (40) for the condenser part or the wick part to be incorporated, and a hollow (31) for heat insulation.

摘要翻译： 本发明提供一种具有优异的冷却性能的冷却器，其能够被小型化和低成形化，电子设备和制造冷却器的方法。 冷却器（1）包括下板构件（10）和上复合板构件。 下板构件（10）由塑料制成，并具有用于使水或蒸汽在其中循环的空腔部分（11）。 上复合板构件包括用于冷凝器部分的板构件（20），上板构件（30）和用于芯部的板构件（40）。 用于冷凝器部分和芯部分别的板件（20）和（40）分别由具有较高导热率的金属材料制成，例如铜和镍。 每个构件具有用于允许它们作为冷凝器和灯芯的凹槽。 上板构件（30）包括用于容纳用于冷凝器部分或芯部的板构件（20）或（40）的开口（32）或（34），以及用于隔热的中空部（31） 。

公开(公告)号：US06768257B1

公开(公告)日：2004-07-27

申请号：US09698989

申请日：2000-10-27

申请人： Jiro Yamada ,  Tasuya Sasaoka ,  Mitsunobu Sekiya ,  Naoki Sano ,  Yasuhiro Chiba ,  Takashi Hirano ,  Yuichi Iwase

发明人： Jiro Yamada ,  Tasuya Sasaoka ,  Mitsunobu Sekiya ,  Naoki Sano ,  Yasuhiro Chiba ,  Takashi Hirano ,  Yuichi Iwase

IPC分类号： H01J162

CPC分类号： H01L27/1214 ,  H01L27/3246 ,  H01L51/0011 ,  H01L51/5203 ,  H01L51/5212 ,  H01L51/5228 ,  H01L2251/5315

摘要： An active-matrix-type display apparatus ensuring sufficient luminous intensity of display devices within a display plane and allowing improved display properties is provided. Such display apparatus having of a plurality of pixels comprises a lower electrode formed on a substrate; organic layers formed on the lower electrode; and an upper common electrode formed on the organic layers; in which a plurality of the pixels are partitioned by a rib larger in the thickness than the organic layers and having at least a conductive material layer; and the conductive material layer is electrically connected to the upper common electrode.

摘要翻译： 提供一种有源矩阵型显示装置，其确保显示平面内的显示装置的足够的发光强度并且允许改进的显示特性。 具有多个像素的这种显示装置包括形成在基板上的下电极; 形成在下电极上的有机层; 和形成在有机层上的上部公共电极; 其中多个像素被厚度大于有机层的肋分隔，并且至少具有导电材料层; 并且导电材料层电连接到上部公共电极。

公开(公告)号：US06458715B2

公开(公告)日：2002-10-01

申请号：US09779766

申请日：2001-02-08

申请人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

发明人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

IPC分类号： H01L21265

CPC分类号： H01L21/3105 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/909

摘要： A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

摘要翻译： 可以通过重整绝缘膜和半导体来稳定地获得目标半导体器件。 在制造半导体器件的过程中，在包含水气体（H 2 O）的气氛中，在20〜400℃的温度范围内退火半导体的退火处理后，半导体和绝缘膜中的至少一个被重整 ），分压为1乇至饱和蒸汽压，退火时间为15秒至20小时。

公开(公告)号：US20100190296A1

公开(公告)日：2010-07-29

申请号：US12094756

申请日：2006-11-08

申请人： Yoshiyuki Kawana ,  Naoki Sano

发明人： Yoshiyuki Kawana ,  Naoki Sano

IPC分类号： H01L21/78

CPC分类号： H01L21/6835 ,  B23K26/0006 ,  B23K26/354 ,  B23K2101/34 ,  B23K2101/35 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/172 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/28512 ,  H01L21/78 ,  H01L24/27 ,  H01L29/456 ,  H01L29/66272 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/04026 ,  H01L2224/27436 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/0132 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is handled without cracks in the substrate and treated with heat to improve a contact between semiconductor back surface and metal in a high yield and a semiconductor device may be manufactured in a high yield. In the method of manufacturing a semiconductor device according to the present invention, a notched part is formed from a surface to a middle in a semiconductor substrate by dicing and the surface of the substrate is fixed to a support base. Next, a back surface of the substrate is ground to thin the semiconductor substrate and then a metal electrode and a carbon film that is a heat receiving layer are sequentially formed on the back surface of the substrate. Next, the carbon film is irradiated with light at a power density of 1 kW/cm2 to 1 MW/cm2 for a short time of 0.01 ms to 10 ms to transfer heat from the carbon film and alloy an interface between a semiconductor and the metal electrode. Subsequently, the semiconductor substrate is separated at the notched part into pieces.

摘要翻译： 本发明提供一种制造半导体器件的方法，其中半导体或半导体器件的薄化衬底在衬底中被处理而没有裂纹并且被热处理以高产率地改善半导体背表面和金属之间的接触，并且半导体 装置可以以高产量制造。 在根据本发明的半导体器件的制造方法中，通过切割从半导体衬底的表面到中间形成切口部分，并且将衬底的表面固定到支撑基底。 接下来，将衬底的背面研磨以使半导体衬底细化，然后在衬底的背面依次形成金属电极和作为受热层的碳膜。 接下来，以1kW / cm 2至1MW / cm 2的功率密度的光以0.01ms至10ms的短时间照射碳膜，以从碳膜转移热量并使合金在半导体和金属之间的界面 电极。 随后，将半导体衬底在切口部分分成多个。

公开(公告)号：US06291366B1

公开(公告)日：2001-09-18

申请号：US08515068

申请日：1995-08-14

申请人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

发明人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

IPC分类号： H01L2131

CPC分类号： H01L21/3105 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/909

摘要： A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

摘要翻译： 可以通过重整绝缘膜和半导体来稳定地获得目标半导体器件。 在制造半导体器件的过程中，在包含水气体（H 2 O）的气氛中，在20〜400℃的温度范围内退火半导体的退火处理后，半导体和绝缘膜中的至少一个被重整 ），分压为1乇至饱和蒸汽压，退火时间为15秒至20小时。