公开(公告)号：US07283398B1

公开(公告)日：2007-10-16

申请号：US10838962

申请日：2004-05-04

申请人： Yue-Song He ,  Richard Fastow ,  Takao Akaogi ,  Wing Leung ,  Zhigang Wang

发明人： Yue-Song He ,  Richard Fastow ,  Takao Akaogi ,  Wing Leung ,  Zhigang Wang

IPC分类号： G11C16/06

CPC分类号： G11C16/0466 ,  G11C16/344 ,  G11C16/3445 ,  G11C16/3477

摘要： The present invention provides a method for determining program and erase states in flash memory devices. Specifically, one embodiment of the present invention discloses a method for minimizing false detection of states in an array of non-volatile floating gate memory cells. A plurality of word lines are arranged in a plurality of rows. A plurality of bit lines are arranged in a plurality of columns. The method begins by determining a selected bit line that is associated with a column of memory cells. Then, the method continues by biasing a group of word lines at a negative voltage. The group of word lines are electrically coupled to the associated memory cells. The application of negative voltage to the group of word lines limits leakage current contributions from the associated memory cells in the column of memory cells when performing a verify operation.

摘要翻译： 本发明提供一种用于确定闪存设备中的程序和擦除状态的方法。 具体地，本发明的一个实施例公开了一种用于使非易失性浮动栅极存储单元的阵列中的状态的错误检测最小化的方法。 多个字线被布置成多行。 多个位线被布置在多个列中。 该方法通过确定与一列存储器单元相关联的所选位线开始。 然后，该方法通过在一个负电压下偏置一组字线来继续。 字线组电耦合到相关联的存储器单元。 当执行验证操作时，将负电压施加到字线组限制了来自存储器单元列中的相关联存储器单元的泄漏电流贡献。

公开(公告)号：US06541338B2

公开(公告)日：2003-04-01

申请号：US09917182

申请日：2001-07-30

申请人： Zhigang Wang ,  Yue-Song He ,  Richard Fastow

发明人： Zhigang Wang ,  Yue-Song He ,  Richard Fastow

IPC分类号： H01L218247

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A method of forming flash memory EEPROM devices having a low energy source implant and a high-energy VSS connection implant such that the intrinsic source defect density is reduced and the VSs resistance is low. The source regions are implanted with a low energy, low dosage dopant ions and the VSS regions are implanted with a high energy, high dosage dopant ions.

摘要翻译： 一种形成具有低能量源注入和高能量VSS连接注入的闪存EEPROM器件的方法，使得本征源缺陷密度降低并且VSs电阻低。 源区域注入低能量，低剂量掺杂剂离子，VSS区域注入高能量，高剂量掺杂剂离子。

公开(公告)号：US06852594B1

公开(公告)日：2005-02-08

申请号：US10053256

申请日：2002-01-18

申请人： Zhigang Wang ,  Yue-Song He ,  Richard Fastow

发明人： Zhigang Wang ,  Yue-Song He ,  Richard Fastow

IPC分类号： H01L21/336 ,  H01L21/8247 ,  H01L27/115

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： Methods of forming flash memory EEPROM devices having lightly doped source region near the critical gate region and a heavily doped source region away from the critical gate region. In a first embodiment a first source mask is formed exposing source regions and portions of the gates and implanting n dopant ions, replacing the first source mask with a second source mask that exposes a portion of the source regions and implanting n+ dopant ions. In a second embodiment a source mask is formed exposing a portion of the source regions and implanting n+ dopant ions.

摘要翻译： 形成具有在临界栅极区附近的轻掺杂源极区域和远离临界栅极区域的重掺杂源极区域的快闪存储器EEPROM器件的方法。 在第一实施例中，形成第一源掩模，用于暴露源极区域和栅极的部分以及注入n个掺杂剂离子，用第二源极掩模代替第一源极掩模，第二源极掩模暴露出源区域的一部分并注入n +掺杂离子 。 在第二实施例中，形成暴露源区的一部分并注入n +掺杂离子的源掩模。

公开(公告)号：US08896048B1

公开(公告)日：2014-11-25

申请号：US10861581

申请日：2004-06-04

申请人： Richard Fastow ,  Zhigang Wang ,  Yue-Song He ,  Kazuhiro Mizutani ,  Pavel Fastenko

发明人： Richard Fastow ,  Zhigang Wang ,  Yue-Song He ,  Kazuhiro Mizutani ,  Pavel Fastenko

IPC分类号： H01L29/76

CPC分类号： H01L29/66659 ,  H01L29/66825 ,  H01L29/7881

摘要： The present invention provides an apparatus and method for a metal oxide semiconductor field effect transistor (MOSFET) fabricated to reduce short channel effects. The MOSFET includes a semiconductor substrate, a gate stack formed above the semiconductor substrate, a drain side sidewall spacer formed on a drain side of the gate stack, a source side sidewall spacer formed on a source side of the gate stack, and source and drain regions. The source region is formed in the semiconductor substrate on the source side, and is aligned by the source side sidewall spacer to extend an effective channel length between the source region and drain region. The drain region is formed on the drain side in the semiconductor substrate, and is aligned by drain side sidewall spacer to further extend the effective channel length.

摘要翻译： 本发明提供一种制造用于减少短沟道效应的金属氧化物半导体场效应晶体管（MOSFET）的装置和方法。 MOSFET包括半导体衬底，形成在半导体衬底上方的栅极堆叠，形成在栅极堆叠的漏极侧的漏极侧壁间隔物，形成在栅极堆叠的源极侧的源极侧壁隔离物，以及源极和漏极 地区。 源极区域形成在源极侧的半导体衬底中，并且通过源极侧壁间隔物对齐以在源极区域和漏极区域之间延伸有效沟道长度。 漏极区域形成在半导体衬底的漏极侧，并且通过漏极侧壁间隔物排列以进一步延长有效沟道长度。

公开(公告)号：US06773990B1

公开(公告)日：2004-08-10

申请号：US10429150

申请日：2003-05-03

申请人： Richard Fastow ,  Yue-Song He ,  Kazuhiro Mizutani ,  Timothy Thurgate

发明人： Richard Fastow ,  Yue-Song He ,  Kazuhiro Mizutani ,  Timothy Thurgate

IPC分类号： H10L21336

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： According to one exemplary embodiment, a method for fabricating a floating gate memory array comprises a step of removing a dielectric material from an isolation region situated in a substrate to expose a trench, where the trench is situated between a first source region and a second source region, where the trench defines sidewalls in the substrate. The method further comprises implanting an N type dopant in the first source region, the second source region, and the sidewalls of the trench, where the N type dopant forms an N+ type region. The method further comprises implanting a P type dopant in the first source region, the second source region, and the sidewalls of the trench, where the P type dopant forms a P type region, and where the P type region is situated underneath the N+ type region.

摘要翻译： 根据一个示例性实施例，一种用于制造浮动栅极存储器阵列的方法包括从位于衬底中的隔离区域去除介电材料以暴露沟槽的步骤，其中沟槽位于第一源区域和第二源极之间 区域，其中沟槽限定衬底中的侧壁。 该方法还包括在第一源极区域，第二源极区域和沟槽的侧壁中注入N型掺杂剂，其中N型掺杂剂形成N +型区域。 该方法还包括在第一源极区域，第二源极区域和沟槽的侧壁中注入P型掺杂剂，其中P型掺杂剂形成P型区域，并且其中P型区域位于N +型下方 地区。

公开(公告)号：US06700201B1

公开(公告)日：2004-03-02

申请号：US10013902

申请日：2001-12-11

申请人： Richard Fastow ,  Yue-Song He ,  Sameer Haddad

发明人： Richard Fastow ,  Yue-Song He ,  Sameer Haddad

IPC分类号： H01L2348

CPC分类号： H01L27/105 ,  Y10S257/906

摘要： In a memory array, a plurality of sectors are included. Each sector includes a plurality of parallel bit lines which lie in a plane. Sector connecting lines connect the sectors. These sector connecting lines are parallel to each other and to the bit lines. The sector connecting lines include a first set of sector connecting lines which lie in a plane parallel to and adjacent and spaced from the plane of the bit lines, and a second set of sector connecting lines which lie in a plane parallel to and adjacent and spaced from the plane of the first set of sector connecting lines. When viewed across the sector, consecutive sector connecting lines lie in the two different planes thereof in alternating manner, i.e., the sector connecting lines are in a staggered relation.

摘要翻译： 在存储器阵列中，包括多个扇区。 每个扇区包括位于平面中的多个并行位线。 扇区连接线连接扇区。 这些扇形连接线彼此平行并且与位线平行。 扇形连接线包括第一组扇形连接线，它们位于与位线的平面平行且相邻并与其间隔开的平面中;以及第二组扇形连接线，其位于平行于并相邻并间隔开的平面中 从第一套扇形连接线的平面。 当跨扇区观看时，连续的扇区连接线以交替方式位于其两个不同的平面中，即扇区连接线处于交错关系。

公开(公告)号：US06963106B1

公开(公告)日：2005-11-08

申请号：US10839626

申请日：2004-05-04

申请人： Richard Fastow ,  Yue-Song He ,  Kazuhiro Mizutani ,  Timothy Thurgate

发明人： Richard Fastow ,  Yue-Song He ,  Kazuhiro Mizutani ,  Timothy Thurgate

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L21/788

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： According to one exemplary embodiment, a method for fabricating a floating gate memory array comprises a step of removing a dielectric material from an isolation region situated in a substrate to expose a trench, where the trench is situated between a first source region and a second source region, where the trench defines sidewalls in the substrate. The method further comprises implanting an N type dopant in the first source region, the second source region, and the sidewalls of the trench, where the N type dopant forms an N+ type region. The method further comprises implanting a P type dopant in the first source region, the second source region, and the sidewalls of the trench, where the P type dopant forms a P type region, and where the P type region is situated underneath the N+ type region.

摘要翻译： 根据一个示例性实施例，一种用于制造浮动栅极存储器阵列的方法包括从位于衬底中的隔离区域去除介电材料以暴露沟槽的步骤，其中沟槽位于第一源区域和第二源极之间 区域，其中沟槽限定衬底中的侧壁。 该方法还包括在第一源极区域，第二源极区域和沟槽的侧壁中注入N型掺杂剂，其中N型掺杂剂形成N +型区域。 该方法还包括在第一源极区域，第二源极区域和沟槽的侧壁中注入P型掺杂剂，其中P型掺杂剂形成P型区域，并且其中P型区域位于N +型下方 地区。

公开(公告)号：US06953752B1

公开(公告)日：2005-10-11

申请号：US10358756

申请日：2003-02-05

申请人： Yue-Song He ,  Sameer Haddad ,  Zhi-Gang Wang ,  Richard Fastow

发明人： Yue-Song He ,  Sameer Haddad ,  Zhi-Gang Wang ,  Richard Fastow

IPC分类号： H01L21/311 ,  H01L21/8247

CPC分类号： H01L27/11521

摘要： In the present method of undertaking a self aligned source etch of a semiconductor structure, a substrate has oxide thereon. First and second adjacent stacked gate structures are provided on the substrate. Oxide spacers are provided on the respective first and second adjacent sides of the first and second gate stacked structures, and polysilicon spacers are provided on the respective oxide spacers. A self aligned source etch is undertaken using the gate structures, oxide spacers, and polysilicon spacers as a mask. The polysilicon spacers are then removed, and metal, for example cobalt, is provided on the substrate, using the oxide spacers as a mask. A silicidation step is undertaken to form metal silicide common source line on the substrate.

摘要翻译： 在进行半导体结构的自对准源蚀刻的本方法中，衬底在其上具有氧化物。 第一和第二相邻的堆叠栅极结构设置在基板上。 在第一和第二栅极堆叠结构的相应的第一和第二相邻侧上设置氧化物间隔物，并且在各个氧化物间隔物上设置多晶硅间隔物。 使用栅极结构，氧化物间隔物和多晶硅间隔物作为掩模进行自对准源蚀刻。 然后去除多晶硅间隔物，并且使用氧化物间隔物作为掩模在衬底上提供金属（例如钴）。 进行硅化步骤以在衬底上形成金属硅化物共同源极线。

公开(公告)号：US06878589B1

公开(公告)日：2005-04-12

申请号：US10431322

申请日：2003-05-06

申请人： Yue-Song He ,  Richard Fastow ,  Xin Guo

发明人： Yue-Song He ,  Richard Fastow ,  Xin Guo

IPC分类号： H01L21/336 ,  H01L29/788 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66825 ,  H01L29/7885

摘要： A method and system for improving short channel effect on a floating gate device is disclosed. In one embodiment, a p-type implant is applied to a source side of the floating gate device. In addition, the present embodiment applies a p-type implant to a drain side of the floating gate device. The p-type implant to the drain side is performed at a different angle than the p-type implant to the source side. The p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.

摘要翻译： 公开了一种用于改善对浮动栅极器件的短沟道效应的方法和系统。 在一个实施例中，p型注入被施加到浮动栅极器件的源极侧。 此外，本实施例将p型注入施加到浮动栅极器件的漏极侧。 以与植入源侧的p型植入物不同的角度进行到漏极侧的p型植入。 植入到漏极侧的p型植入物被深度植入到源极侧的p型植入物的深度。

公开(公告)号：US06898124B1

公开(公告)日：2005-05-24

申请号：US10678446

申请日：2003-10-03

申请人： Zhigang Wang ,  Nian Yang ,  Yue-Song He

发明人： Zhigang Wang ,  Nian Yang ,  Yue-Song He

IPC分类号： G11C11/56 ,  G11C16/06 ,  G11C16/26

CPC分类号： G11C16/26 ,  G11C11/5642

摘要： An exemplary sensing circuit comprises a first transistor connected to a first node, where a target memory cell has a drain capable of being connected to the first node through a selection circuit during a read operation involving the target memory cell. The sensing circuit further comprises a decouple circuit which is connected to the first transistor. The decouple circuit includes a second transistor having a gate coupled to a gate of the first transistor. The decouple circuit further has a decouple coefficient (N) greater than 1. The drain of the second transistor is connected at a second node to a reference voltage through a bias resistor. With the arrangement, the drain of the second transistor generates a sense amp input voltage at the second node such that the sense amp input voltage is decoupled from the first node.

摘要翻译： 示例性感测电路包括连接到第一节点的第一晶体管，其中目标存储器单元具有能够在涉及目标存储器单元的读取操作期间通过选择电路连接到第一节点的漏极。 感测电路还包括连接到第一晶体管的去耦电路。 解耦电路包括具有耦合到第一晶体管的栅极的栅极的第二晶体管。 去耦电路还具有大于1的去耦系数（N）。第二晶体管的漏极通过偏置电阻器在第二节点连接到参考电压。 利用该布置，第二晶体管的漏极在第二节点处产生感测放大器输入电压，使得感测放大器输入电压与第一节点分离。