利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.027 秒)

    Nitride semiconductor laser element and optical device containing it
    1.
    发明授权
    Nitride semiconductor laser element and optical device containing it 有权
    氮化物半导体激光元件和含有它的光学器件

    公开(公告)号：US06891201B2

    公开(公告)日：2005-05-10

    申请号：US10466339

    申请日：2002-01-09

    申请人： Yuhzoh Tsuda ,  Takayuki Yuasa ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yukio Yamasaki

    发明人： Yuhzoh Tsuda ,  Takayuki Yuasa ,  Shigetoshi Ito ,  Mototaka Taneya ,  Yukio Yamasaki

    IPC分类号： H01L33/00 ,  H01S5/02 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/12

    摘要： A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.

    摘要翻译： 氮化物半导体发光器件包括：处理衬底（101a），其包括形成在氮化物半导体衬底的主表面上的沟槽和丘丘;覆盖所述沟槽和所述被处理衬底的所述山丘的氮化物半导体衬底（102），以及 具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107）之间的量子阱层接触的阻挡层的发光器件结构 -110）在氮化物半导体衬底上。 发光器件结构的电流限制部分形成在距宽度方向上的槽的中心超过1um的区域上方，并且在宽度方向上距离山的中心大于1mum。

    Semiconductor laser device
    2.
    发明申请
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US20050226295A1

    公开(公告)日：2005-10-13

    申请号：US10510324

    申请日：2003-03-26

    申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    IPC分类号： H01S5/20 ,  H01S5/00

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2

    摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n 的衬底上的折射率n C 1的第一覆盖层 折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层， 指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率 （N c1，n3，c3，...，n3）的关系，N > N（N N，N，N）满足。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US07177336B2

    公开(公告)日：2007-02-13

    申请号：US10510324

    申请日：2003-03-26

    申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    IPC分类号： H01S3/03 ,  H01S5/00 ,  H01S5/20 ,  H01S5/323

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2

    摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n 的衬底上的折射率n C 1的第一覆盖层 折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层， 指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率 （N c1，n3，c3，...，n3）的关系，N > N（N N，N，N）满足。

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US07421000B2

    公开(公告)日：2008-09-02

    申请号：US11704348

    申请日：2007-02-09

    申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2

    摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n 的衬底上，折射率n

    Semiconductor laser device
    6.
    发明申请
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US20070153854A1

    公开(公告)日：2007-07-05

    申请号：US11704348

    申请日：2007-02-09

    申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2

    摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n 的衬底上，折射率n

    Nitride-based semiconductor light-emitting device
    7.
    发明申请
    Nitride-based semiconductor light-emitting device 审中-公开
    氮化物系半导体发光元件

    公开(公告)号：US20090059984A1

    公开(公告)日：2009-03-05

    申请号：US12230364

    申请日：2008-08-28

    申请人： Masataka Ohta ,  Yuhzoh Tsuda ,  Yukio Yamasaki

    发明人： Masataka Ohta ,  Yuhzoh Tsuda ,  Yukio Yamasaki

    IPC分类号： H01S5/34

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3407

    摘要： A nitride-based semiconductor light-emitting device includes at least one n-type nitride-based semiconductor layer, an active layer having a quantum well structure, and at least one p-type nitride-based semiconductor layer successively stacked on a substrate, the active layer including an InGaN well layer and a barrier layer containing at least one of GaN and InGaN and having a light-emission wavelength in a range of 430 nm to 580 nm, the well layer having a thickness in a range of 1.2 nm to 4.0 nm, and the barrier layer being more than 10 times and at most 45 times as thick as the well layer.

    摘要翻译： 氮化物系半导体发光元件具有至少一个n型氮化物系半导体层，具有量子阱结构的有源层和依次层叠在基板上的至少一个p型氮化物系半导体层， 活性层包括InGaN阱层和包含GaN和InGaN中的至少一种并且具有在430nm至580nm范围内的发光波长的势垒层，阱层的厚度在1.2nm至4.0的范围内 nm，阻挡层为阱层的10倍以上45倍以下。

    Semiconductor laser element and optical data recording device
    8.
    发明授权
    Semiconductor laser element and optical data recording device 有权
    半导体激光元件和光学数据记录装置

    公开(公告)号：US07142575B2

    公开(公告)日：2006-11-28

    申请号：US10769244

    申请日：2004-01-30

    申请人： Yukio Yamasaki ,  Shigetoshi Ito

    发明人： Yukio Yamasaki ,  Shigetoshi Ito

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34333

    摘要： A semiconductor laser element has the following structure. In the clad layer, a difference in a light radiation loss between the basic horizontal-lateral mode and the 1st-order horizontal-lateral mode is 10 cm−1 or more. The refractive index of the clad layer is below an effective index against light in the basic horizontal-lateral mode, and the refractive index of the clad layer is equal to or more than an effective index against light in the 1st-order horizontal-lateral mode. The upper clad layer is provided only above a portion of the active layer, and thus is at least included in the ridge-stripe structure. This structure inhibits the I-L characteristic from suffering kink and realizes oscillations in the basic horizontal-lateral mode until output power reaches as high as 60–100 mW, in a peak output power of the semiconductor laser element at the time of a pulse current operation. This structure also enables the FFP to have an ellipticity of close to 1, thus making the spot of the semiconductor laser element close to a circular shape.

    摘要翻译： 半导体激光元件具有以下结构。 在包覆层中，基本水平横向模式和一阶水平横向模式之间的光辐射损失之差为10cm -1以上。 包覆层的折射率低于基本水平横向模式中的光的有效折射率，并且包覆层的折射率等于或大于一阶水平横向模式中的光的有效折射率 。 上覆盖层仅设置在有源层的一部分上方，因此至少包括在脊条结构中。 这种结构在脉冲电流操作时抑制了半导体激光器元件的峰值输出功率，从而抑制I-L特性遭受扭结并实现基本水平横向模式的振荡，直到输出功率达到高达60-100mW。 该结构也使得FFP具有接近1的椭圆率，从而使半导体激光元件的光斑接近圆形。