Specimen preparation device, and control method in specimen preparation device
    1.
    发明授权
    Specimen preparation device, and control method in specimen preparation device 失效
    样品制备装置及样品制备装置的控制方法

    公开(公告)号:US08710464B2

    公开(公告)日:2014-04-29

    申请号:US13203807

    申请日:2009-10-23

    IPC分类号: G21K5/08

    CPC分类号: G01N1/286

    摘要: Separation and the like of an excised specimen from a specimen are automatically performed. Marks for improving image recognition accuracy are provided in a region that becomes an excised specimen in a specimen and a region other than said region, or in a transfer means for transferring the excised specimen and a specimen holder capable of holding the excised specimen, and the relative movement of the excised specimen and the specimen, and the like are recognized with high accuracy by image recognition. In the sampling of a minute specimen using a focused ion beam, the detection of an end point of processing for separation of the excised specimen from the specimen, and the like are automatically performed. Thus, for example, unmanned specimen excision becomes possible, and preparation of a lot of specimens becomes possible.

    摘要翻译: 自动进行切片样品与试样的分离等。 在成为试样和除了所述区域以外的区域的切除试样的区域中,或者在用于转移切除的试样的转移装置和能够保持切除的试样的试样保持器的区域中提供用于提高图像识别精度的标记, 通过图像识别以高精度识别切除的样本和样本的相对运动等。 在使用聚焦离子束对分钟标本的取样中,自动执行用于将切出的样品与试样分离的处理终点的检测等。 因此,例如,无人标本切除成为可能,并且可以制备大量标本。

    Charged particle beam device and method for correcting position with respect to charged particle beam
    2.
    发明授权
    Charged particle beam device and method for correcting position with respect to charged particle beam 失效
    带电粒子束装置和相对于带电粒子束校正位置的方法

    公开(公告)号:US08629394B2

    公开(公告)日:2014-01-14

    申请号:US13202498

    申请日:2009-10-23

    IPC分类号: G01N31/00 G01N33/00

    摘要: An object of the present invention is to eliminate a distortion in an image even if there is an angular difference between the deflection direction of the charged particle beam and the tilt axis of a specimen, and to accurately observe and process the specimen. When the deflection direction of the charged particle beam is not parallel to the tilt axis of the specimen, the deflection rotation angle to the observation direction of the charged particle beam is determined, and the deflection pattern is changed. Thereby the distortion in the image is corrected. The deflection pattern is changed to a parallelogram. A distortion-free image is obtained even if the specimen is tilted, and the specimen can be observed and processed with high accuracy. This allows automatically recognizing the position correction mark to perform observation and processing after correcting the positional relation.

    摘要翻译: 本发明的目的是消除图像中的变形,即使在带电粒子束的偏转方向与试样的倾斜轴之间存在角度差,也能够精确地观察和处理试样。 当带电粒子束的偏转方向与试样的倾斜轴不平行时,确定与带电粒子束的观察方向的偏转旋转角度,改变偏转图案。 从而校正图像中的失真。 偏转图案变为平行四边形。 即使样品倾斜,也能获得无变形的图像,能够高精度地观察和加工样品。 这允许在校正位置关系之后自动识别位置校正标记以执行观察和处理。

    SPECIMEN PREPARATION DEVICE, AND CONTROL METHOD IN SPECIMEN PREPARATION DEVICE
    3.
    发明申请
    SPECIMEN PREPARATION DEVICE, AND CONTROL METHOD IN SPECIMEN PREPARATION DEVICE 失效
    样品制备装置,以及样品制备装置中的控制方法

    公开(公告)号:US20110309245A1

    公开(公告)日:2011-12-22

    申请号:US13203807

    申请日:2009-10-23

    IPC分类号: G21K5/10 G01N23/02

    CPC分类号: G01N1/286

    摘要: Separation and the like of an excised specimen from a specimen are automatically performed. Marks for improving image recognition accuracy are provided in a region that becomes an excised specimen in a specimen and a region other than said region, or in a transfer means for transferring the excised specimen and a specimen holder capable of holding the excised specimen, and the relative movement of the excised specimen and the specimen, and the like are recognized with high accuracy by image recognition. In the sampling of a minute specimen using a focused ion beam, the detection of an end point of processing for separation of the excised specimen from the specimen, and the like are automatically performed. Thus, for example, unmanned specimen excision becomes possible, and preparation of a lot of specimens becomes possible.

    摘要翻译: 自动进行切片样品与试样的分离等。 在成为试样和除了所述区域以外的区域的切除试样的区域中,或者在用于转移切除的试样的转移装置和能够保持切除的试样的试样保持器的区域中提供用于提高图像识别精度的标记, 通过图像识别以高精度识别切除的样本和样本的相对运动等。 在使用聚焦离子束对分钟标本的取样中,自动执行用于将切出的样品与试样分离的处理终点的检测等。 因此,例如,无人标本切除成为可能,并且可以制备大量标本。

    CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CORRECTING POSITION WITH RESPECT TO CHARGED PARTICLE BEAM
    4.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CORRECTING POSITION WITH RESPECT TO CHARGED PARTICLE BEAM 失效
    充电颗粒光束装置和相对于充电颗粒光束校正位置的方法

    公开(公告)号:US20110297826A1

    公开(公告)日:2011-12-08

    申请号:US13202498

    申请日:2009-10-23

    IPC分类号: H01J37/26

    摘要: An object of the present invention is to eliminate a distortion in an image even if there is an angular difference between the deflection direction of the charged particle beam and the tilt axis of a specimen, and to accurately observe and process the specimen. When the deflection direction of the charged particle beam is not parallel to the tilt axis of the specimen, the deflection rotation angle to the observation direction of the charged particle beam is determined, and the deflection pattern is changed. Thereby the distortion in the image is corrected. The deflection pattern is changed to a parallelogram. A distortion-free image is obtained even if the specimen is tilted, and the specimen can be observed and processed with high accuracy. This allows automatically recognizing the position correction mark to perform observation and processing after correcting the positional relation.

    摘要翻译: 本发明的目的是消除图像中的变形,即使在带电粒子束的偏转方向与试样的倾斜轴之间存在角度差,也能够精确地观察和处理试样。 当带电粒子束的偏转方向与试样的倾斜轴不平行时,确定与带电粒子束的观察方向的偏转旋转角度,改变偏转图案。 从而校正图像中的失真。 偏转图案变为平行四边形。 即使样品倾斜,也能获得无变形的图像,能够高精度地观察和加工样品。 这允许在校正位置关系之后自动识别位置校正标记以执行观察和处理。

    Method and apparatus for specimen fabrication
    5.
    发明授权
    Method and apparatus for specimen fabrication 有权
    用于样品制造的方法和装置

    公开(公告)号:US07999240B2

    公开(公告)日:2011-08-16

    申请号:US12168232

    申请日:2008-07-07

    IPC分类号: H01J37/20

    摘要: A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.

    摘要翻译: 一种用于分析半导体器件的系统,包括:第一离子束装置,包括:样品台,用于安装样品基板; 其中放置样品台的真空室; 离子束照射光学系统照射样品基板; 样本保持器,其容纳通过离子束的照射与样品基板分离的多个样本; 以及从所述样品基材中提取分离出的试样并将分离的试样转移到所述试样保持器的探针。 对样品进行精加工的第二离子束装置; 以及用于分析成品样品的分析器,其中所述第一离子束装置在真空条件下分离所述样品和所述探针。

    Liquid metal ion gun
    6.
    发明申请
    Liquid metal ion gun 有权
    液态金属离子枪

    公开(公告)号:US20080210883A1

    公开(公告)日:2008-09-04

    申请号:US12076481

    申请日:2008-03-19

    IPC分类号: G21G5/00

    摘要: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    摘要翻译: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素(W和Ga),如果反溅射的颗粒附着到Ga液态金属离子源,则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制(GUN)光圈来放置大约的Ga。 在束发射区域(Ga储存)中包含的部分的表面上25mg(熔点为30℃))。 当将离子发射到光束限制(GUN)孔径时,发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

    Focused ion beam apparatus
    8.
    发明授权
    Focused ion beam apparatus 有权
    聚焦离子束装置

    公开(公告)号:US07235798B2

    公开(公告)日:2007-06-26

    申请号:US11151425

    申请日:2005-06-14

    IPC分类号: G21K5/10

    摘要: In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

    摘要翻译: 为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察,将双透镜光学系统安装在聚焦离子束装置上,并且在光学系统中距离 离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

    Liquid metal ion gun
    9.
    发明授权
    Liquid metal ion gun 有权
    液态金属离子枪

    公开(公告)号:US07211805B2

    公开(公告)日:2007-05-01

    申请号:US11312367

    申请日:2005-12-21

    IPC分类号: H01J27/00 G21G5/00 G21K7/00

    摘要: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    摘要翻译: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素(W和Ga),如果反溅射的颗粒附着到Ga液态金属离子源,则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制(GUN)光圈来放置大约的Ga。 在束发射区域(Ga储存)中包含的部分的表面上25mg(熔点为30℃))。 当将离子发射到光束限制(GUN)孔径时,发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。