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    Method of producing light emitting apparatus
    2.
    发明授权
    Method of producing light emitting apparatus 有权
    制造发光装置的方法

    公开(公告)号：US07708613B2

    公开(公告)日：2010-05-04

    申请号：US11656580

    申请日：2007-01-23

    申请人： Yuichi Taguchi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Mitsutoshi Higashi

    发明人： Yuichi Taguchi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Mitsutoshi Higashi

    IPC分类号： H01J1/62

    CPC分类号： H01L33/507 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2924/16195 ,  H01L2933/0041

    摘要： A method of producing a light emitting apparatus including a light emitting element, a light emitting element housing having a recess for housing the light emitting element, and a translucent substrate placed on the light emitting element housing is disclosed. The disclosed method includes a fluorescent-substance-containing resin forming step of forming a fluorescent-substance-containing resin on a first side of the translucent substrate which first side is opposite to a second side of the translucent substrate which second side faces the recess. In the fluorescent-substance-containing resin forming step, luminance and chromaticity of light that is emitted from the light emitting element and then transmitted by the fluorescent-substance-containing resin are measured and a thickness of the fluorescent-substance-containing resin is adjusted based on the measured luminance and chromaticity so that light emitted from the light emitting apparatus attains the specified luminance and chromaticity.

    摘要翻译： 公开了一种制造包括发光元件的发光装置的方法，具有用于容纳发光元件的凹部的发光元件壳体和放置在发光元件壳体上的透光性基板。 所公开的方法包括在透光性基板的第一面上形成含有荧光物质的树脂的荧光物质的树脂形成工序，第一面与透光性基板的第二面相对，第二面与凹部相对。 在含荧光物质的树脂形成步骤中，测量从发光元件发射并随后由含荧光物质的树脂透射的光的亮度和色度，并调节含荧光物质的树脂的厚度 基于测量的亮度和色度，使得从发光装置发射的光达到规定的亮度和色度。

    SUBSTRATE DIVIDING METHOD
    7.
    发明申请
    SUBSTRATE DIVIDING METHOD 审中-公开
    基板分割方法

    公开(公告)号：US20090098712A1

    公开(公告)日：2009-04-16

    申请号：US12251676

    申请日：2008-10-15

    申请人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

    发明人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3083 ,  H01L21/78

    摘要： A method of dividing a substrate 10 into individual pieces by setting dividing lines A used to dividing the substrate 10 into individual pieces at a predetermined interval in a vertical direction and a horizontal direction and then dividing the substrate 10 along the dividing lines A, includes a step of forming chamfering patterns 14 to form through holes, which are used to chamfer corner portions of individual pieces of the substrate, in respective intersection points between the dividing lines on the substrate, a step of forming chamfering through holes by etching the substrate 10, and a step of obtaining the individual pieces of the substrate by separating the substrate in the vertical direction and the horizontal direction along the dividing lines A respectively.

    摘要翻译： 通过将用于将基板10分割为各个片段的分割线A在垂直方向和水平方向上以预定间隔分割，然后沿着分割线A分割基板10，将基板10分割为单独的片段的方法包括 在基板上的分割线之间的相交点形成倒角图案14以形成用于倒角基板的各个角部的通孔的步骤，通过蚀刻基板10形成倒角的步骤， 以及分别通过沿着分割线A沿垂直方向和水平方向分离衬底来获得衬底的各个片段的步骤。

    METHOD OF MANUFACTURING SUBSTRATE
    8.
    发明申请
    METHOD OF MANUFACTURING SUBSTRATE 有权
    制造基板的方法

    公开(公告)号：US20090093117A1

    公开(公告)日：2009-04-09

    申请号：US12247496

    申请日：2008-10-08

    申请人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

    发明人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

    IPC分类号： H01L21/44

    CPC分类号： H01L21/486 ,  H01L21/76898 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/18301

    摘要： A method of manufacturing a substrate, includes: (a) forming the through hole by etching the silicon substrate from a first surface of the silicon substrate by a Bosch process; (b) forming a thermal oxide film such that the thermal oxide film covers the first surface of the silicon substrate, a second surface of the silicon substrate opposite to the first surface, and a surface of the silicon substrate corresponding to a side surface of the through hole, by thermally oxidizing the silicon substrate where the through hole is formed; (c) removing the thermal oxide film; (d) forming an insulating film such that the insulating film covers the first and second surfaces of the silicon substrate and the surface of the silicon substrate corresponding to the side surface of the through hole; and (e) forming the through electrode in the through hole on which the insulating film is formed.

    摘要翻译： 一种制造衬底的方法，包括：（a）通过使用Bosch工艺从硅衬底的第一表面上蚀刻硅衬底形成通孔; （b）形成热氧化膜，使得热氧化膜覆盖硅衬底的第一表面，与第一表面相对的硅衬底的第二表面和与衬底的侧表面相对应的硅衬底的表面 通孔，通过热氧化形成通孔的硅衬底; （c）去除热氧化膜; （d）形成绝缘膜，使得所述绝缘膜覆盖所述硅衬底的所述第一表面和所述第二表面以及所述硅衬底的与所述通孔的侧表面相对应的表面; 和（e）在其上形成有绝缘膜的通孔中形成通孔。