公开(公告)号：US20140167066A1

公开(公告)日：2014-06-19

申请号：US14232517

申请日：2012-05-25

申请人： Yukio Kashima ,  Eriko Matsuura ,  Hiromi Nishihara ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sachie Fujikawa ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada

发明人： Yukio Kashima ,  Eriko Matsuura ,  Hiromi Nishihara ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sachie Fujikawa ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada

IPC分类号： H01L33/32 ,  H01L21/66

CPC分类号： H01L33/32 ,  H01L22/12 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0083

摘要： A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

摘要翻译： 一种半导体发光元件，在其光提取层中包括具有不同折射率的两个系统（结构）的光子晶体周期性结构。 两个系统（结构）之间的界面满足布拉格散射条件，光子晶体周期结构具有光子带隙。

公开(公告)号：US09349918B2

公开(公告)日：2016-05-24

申请号：US14232517

申请日：2012-05-25

申请人： Yukio Kashima ,  Eriko Matsuura ,  Hiromi Nishihara ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sachie Fujikawa ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada

发明人： Yukio Kashima ,  Eriko Matsuura ,  Hiromi Nishihara ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sachie Fujikawa ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada

IPC分类号： H01L29/15 ,  H01L33/32 ,  H01L33/20 ,  H01L21/66 ,  H01L33/44

CPC分类号： H01L33/32 ,  H01L22/12 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0083

摘要： A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

摘要翻译： 一种半导体发光元件，在其光提取层中包括具有不同折射率的两个系统（结构）的光子晶体周期性结构。 两个系统（结构）之间的界面满足布拉格散射条件，光子晶体周期结构具有光子带隙。

公开(公告)号：US08445938B2

公开(公告)日：2013-05-21

申请号：US12933927

申请日：2009-03-23

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。

公开(公告)号：US08278129B2

公开(公告)日：2012-10-02

申请号：US12622085

申请日：2009-11-19

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L21/00

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/32

摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

公开(公告)号：US20100270583A1

公开(公告)日：2010-10-28

申请号：US12622085

申请日：2009-11-19

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00 ,  H01L21/04

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/32

摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

公开(公告)号：US20100270532A1

公开(公告)日：2010-10-28

申请号：US12621364

申请日：2009-11-18

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0 0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0 0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

摘要翻译： 氮化物半导体发光器件具有p型氮化物半导体层7，n型氮化物半导体层3和发光层6，该发光层6介于p型氮化物半导体层 7和n型氮化物半导体层3.发光层6具有阻挡层6b和阱层6a的量子阱结构。 阻挡层6b由AlaGabIn（1-a-b）N（0 0）形成，并且含有浓度为大于零的第一杂质。 阱层6a由AlcGadIn（1-cd）N（0 0）形成，并且含有浓度为B的第二杂质 等于或大于零。 在本发明的氮化物半导体发光器件中，为了使阻挡层6b的氧浓度比阱层6a的浓度小，A的浓度大于B的浓度。

公开(公告)号：US20120248456A1

公开(公告)日：2012-10-04

申请号：US13394459

申请日：2010-09-07

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L29/20 ,  H01L33/32 ,  H01L21/20

CPC分类号： C30B25/14 ,  C30B25/16 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer.

摘要翻译： 本发明的氮化物半导体发光元件在单晶的一个表面侧具有缓冲层，n型氮化物半导体层，发光层和p型氮化物半导体层的层叠结构 蓝宝石衬底的衬底。 作为缓冲层的氮化物半导体多层结构体包括：形成在单晶衬底的一个表面上的由AlN形成的多个岛状核; 由AlN层形成的第一氮化物半导体层，形成在单晶衬底的一个表面侧，以填充相邻核之间的间隙并覆盖所有核; 以及由AlN层形成并形成在第一氮化物半导体层上的第二氮化物半导体层。

公开(公告)号：US08120013B2

公开(公告)日：2012-02-21

申请号：US12621364

申请日：2009-11-18

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0 0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0 0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

摘要翻译： 氮化物半导体发光器件具有p型氮化物半导体层7，n型氮化物半导体层3和发光层6，该发光层6介于p型氮化物半导体层 7和n型氮化物半导体层3.发光层6具有阻挡层6b和阱层6a的量子阱结构。 阻挡层6b由AlaGabIn（1-a-b）N（0 0）形成，并且含有浓度为大于零的第一杂质。 阱层6a由AlcGadIn（1-cd）N（0 0）形成，并且含有浓度为B的第二杂质 等于或大于零。 在本发明的氮化物半导体发光器件中，为了使阻挡层6b的氧浓度比阱层6a的浓度小，A的浓度大于B的浓度。

公开(公告)号：US20110042713A1

公开(公告)日：2011-02-24

申请号：US12933927

申请日：2009-03-23

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。

公开(公告)号：US08659669B2

公开(公告)日：2014-02-25

申请号：US12764412

申请日：2010-04-21

申请人： Hideki Hirayama ,  Naoto Iwata

发明人： Hideki Hirayama ,  Naoto Iwata

IPC分类号： H04N5/228

CPC分类号： H04N5/23248 ,  G03B2217/005

摘要： A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element.

摘要翻译： 第一高通滤波器，包括低通滤波器，其仅允许小于或等于第一频率的输入信号的频率分量通过;锁存单元，其根据控制来锁存低通滤波器的输出 信号，以及输出输入信号和锁存单元的输出之间的差的计算单元设置在图像稳定电路上。 当闩锁单元中的锁存被释放时，锁存单元的保持值逐步改变为低通滤波器的输出值。 这种第一高通滤波器用于光学元件的定心过程。