公开(公告)号：US07435682B2

公开(公告)日：2008-10-14

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： H01L21/302

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US20050266355A1

公开(公告)日：2005-12-01

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US08114776B2

公开(公告)日：2012-02-14

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20110076833A1

公开(公告)日：2011-03-31

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/762 ,  H01L21/306

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20090258493A1

公开(公告)日：2009-10-15

申请号：US12403979

申请日：2009-03-13

申请人： Yukiteru MATSUI ,  Hajime EDA ,  Takatoshi ONO ,  Satoko Seta ,  Yoshikuni TATEYAMA

发明人： Yukiteru MATSUI ,  Hajime EDA ,  Takatoshi ONO ,  Satoko Seta ,  Yoshikuni TATEYAMA

IPC分类号： H01L21/306

CPC分类号： H01L21/31053 ,  B24B37/044 ,  C09G1/02

摘要： A substance to be polished made of a silicon oxide film formed on a semiconductor substrate is chemically and mechanically polished and planarized by bringing the substance to be polished into contact with a polishing pad having a modulus of elasticity within a range of 400 to 600 megapascals and by relatively sliding the substance to be polished and the polishing pad, in a condition that a polishing pressure is within a range of 50 to 200 hectopascals and that a rotation number of the polishing pad is within a range of 10 to 80 rpm, and in a state that a polishing slurry containing cerium oxide particles and an anionic surfactant is supplied to the polishing pad.

摘要翻译： 通过使待研磨物质与400〜600兆帕的范围内的弹性模量的抛光垫接触，对在半导体基板上形成的氧化硅膜进行抛光的物质进行化学机械研磨和平坦化， 通过在抛光压力在50至200百帕斯卡范围内并且抛光垫的转数在10至80rpm的范围内，并且在 将含有氧化铈粒子和阴离子表面活性剂的研磨浆料供给到研磨垫的状态。

公开(公告)号：US20110070745A1

公开(公告)日：2011-03-24

申请号：US12775423

申请日：2010-05-06

申请人： Yukiteru MATSUI ,  Satoko Seta ,  Takatoshi Ono ,  Hajime Eda

发明人： Yukiteru MATSUI ,  Satoko Seta ,  Takatoshi Ono ,  Hajime Eda

IPC分类号： H01L21/3105 ,  B24B1/00 ,  B24B41/06

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

摘要： A polishing method includes performing conditioning process of injecting a conditioning agent onto a surface of a non-foam polishing pad arranged on a polishing table at a predetermined pressure, and polishing a surface of a polishing target while supplying a polishing slurry containing oxide particles and a surfactant onto the polishing pad, wherein an average of a residual cerium amount is equal to or smaller than 0.35 at % when a plurality of measurement regions, each 200 μm□ in area including the surface of the polishing pad, in a cross section of the polishing pad are measured after the conditioning process.

摘要翻译： 抛光方法包括进行将调理剂注入到以预定压力布置在抛光台上的非泡沫抛光垫的表面上的调节过程，并且在提供包含氧化物颗粒的抛光浆料的同时抛光抛光对象的表面， 表面活性剂在抛光垫上，其中当在包括抛光垫的表面的区域中的每个200μm□的多个测量区域中，残余铈量的平均值等于或小于0.35at％ 抛光垫在调理过程后进行测量。

公开(公告)号：US20050082002A1

公开(公告)日：2005-04-21

申请号：US10927097

申请日：2004-08-27

申请人： Yuusuke Sato ,  Naoki Tamaoki ,  Satoko Seta ,  Regis Zils ,  Jun Sonobe ,  Takako Kimura ,  Kayo Momoda

发明人： Yuusuke Sato ,  Naoki Tamaoki ,  Satoko Seta ,  Regis Zils ,  Jun Sonobe ,  Takako Kimura ,  Kayo Momoda

IPC分类号： B08B7/00 ,  C23C16/44 ,  B08B9/00 ,  C23F1/00

CPC分类号： B08B7/04 ,  B08B7/00 ,  C23C16/4405

摘要： A method of cleaning a film-forming apparatus to remove at least a part of a silicon-based material deposited on a constituent member of the film-forming apparatus after used to form thin films includes introducing a first-gas including fluorine gas and a second gas including nitrogen monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide, and the silicon-based material includes silicon nitride.

摘要翻译： 在形成薄膜之后，清洗膜形成装置以去除沉积在成膜装置的构成部件上的至少一部分硅基材料的方法包括：引入包含氟气的第一气体和第二气体 包括一氧化氮气体的气体进入成膜装置，并加热构成部件。 构成构件包括石英或碳化硅，硅基材料包括氮化硅。