公开(公告)号：US08114776B2

公开(公告)日：2012-02-14

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20110076833A1

公开(公告)日：2011-03-31

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/762 ,  H01L21/306

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US07435682B2

公开(公告)日：2008-10-14

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： H01L21/302

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US20050266355A1

公开(公告)日：2005-12-01

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。

公开(公告)号：US08575030B2

公开(公告)日：2013-11-05

申请号：US13196594

申请日：2011-08-02

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

IPC分类号： H01L21/302

CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

公开(公告)号：US20120034846A1

公开(公告)日：2012-02-09

申请号：US13196594

申请日：2011-08-02

申请人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

IPC分类号： B24B51/00

CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

公开(公告)号：US20130095661A1

公开(公告)日：2013-04-18

申请号：US13428163

申请日：2012-03-23

申请人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

发明人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC分类号： H01L21/302 ,  B24B53/017 ,  B24B37/015 ,  B24B37/013 ,  B24B37/07

CPC分类号： H01L21/76224 ,  C09G1/02 ,  H01L21/31053

摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.

摘要翻译： 根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。 浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。

公开(公告)号：US20130078784A1

公开(公告)日：2013-03-28

申请号：US13425979

申请日：2012-03-21

申请人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

IPC分类号： H01L21/762 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

摘要： According to one embodiment, the CMP slurry includes abrasive particles made of colloidal silica in an amount of 0.5 to 3% by mass of a total mass of the CMP slurry, and a polycarboxylic acid having a weight average molecular weight of from 500 to 10,000, in an amount of 0.1 to 1% by mass of the total mass of the CMP slurry. 50 to 90% by mass of the abrasive particles each has a primary particle diameter of 3 to 10 nm. The CMP slurry has a pH within a range of 2.5 to 4.5.

摘要翻译： 根据一个实施方案，CMP浆料包括由胶浆二氧化硅制成的磨料颗粒，其量为CMP浆料的总质量的0.5至3质量％，以及重均分子量为500至10,000的多元羧酸， 其量为CMP浆料总质量的0.1〜1质量％。 50〜90质量％的研磨粒子的一次粒径为3〜10nm。 CMP浆料的pH在2.5至4.5的范围内。

公开(公告)号：US20130040456A1

公开(公告)日：2013-02-14

申请号：US13427950

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体衬底上的绝缘膜中形成沟槽。 在绝缘膜上形成下层膜。 在下层膜上形成金属膜。 通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。 通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。 通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。