公开(公告)号：US20050266355A1

公开(公告)日：2005-12-01

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US07435682B2

公开(公告)日：2008-10-14

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： H01L21/302

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US07402521B2

公开(公告)日：2008-07-22

申请号：US11418070

申请日：2006-05-05

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/31058 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  H01L27/10867

摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.

摘要翻译： 提出了抛光方法。 该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜， 停止抛光垫和抛光头的旋转。

公开(公告)号：US20090068841A1

公开(公告)日：2009-03-12

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US07452819B2

公开(公告)日：2008-11-18

申请号：US10855529

申请日：2004-05-28

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US20070000872A1

公开(公告)日：2007-01-04

申请号：US11418070

申请日：2006-05-05

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： C03C15/00 ,  H01L21/461 ,  B44C1/22

CPC分类号： H01L21/31058 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  H01L27/10867

摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.

摘要翻译： 提出了抛光方法。 该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜， 停止抛光垫和抛光头的旋转。

公开(公告)号：US08685857B2

公开(公告)日：2014-04-01

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304 ,  B44C1/22

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm，具有亲水性部分的表面活性剂。

公开(公告)号：US20050106874A1

公开(公告)日：2005-05-19

申请号：US10935429

申请日：2004-09-08

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304 ,  C09G1/02 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/461

CPC分类号： H01L21/31058 ,  C09G1/02 ,  H01L21/31053

摘要： A method of manufacturing a semiconductor device includes depositing a SiO2 film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO2 film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

摘要翻译： 一种制造半导体器件的方法包括：在其上形成有布线图案的基板上沉积SiO 2膜; 在SiO 2膜上涂覆SOG膜; 并使用含有氧化铈和阳离子表面活性剂的浆料通过化学机械抛光方法研磨SOG膜。

公开(公告)号：US07700489B2

公开(公告)日：2010-04-20

申请号：US10935429

申请日：2004-09-08

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/31058 ,  C09G1/02 ,  H01L21/31053

摘要： A method of manufacturing a semiconductor device includes depositing a SiO2 film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO2 film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

摘要翻译： 一种制造半导体器件的方法包括在其上形成有布线图案的基板上沉积SiO 2膜; 在SiO 2膜上涂覆SOG膜; 并使用含有氧化铈和阳离子表面活性剂的浆料通过化学机械抛光方法研磨SOG膜。

公开(公告)号：US08119517B2

公开(公告)日：2012-02-21

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。