公开(公告)号：US08466446B2

公开(公告)日：2013-06-18

申请号：US13612000

申请日：2012-09-12

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiag

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiag

IPC分类号： H01L47/00

CPC分类号： H01L45/145 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

公开(公告)号：US08288297B1

公开(公告)日：2012-10-16

申请号：US13224021

申请日：2011-09-01

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiag

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiag

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L45/145 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

摘要翻译： 本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。 金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。 设置在金属氧化物层之间的界面有助于氧空位移动。 在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对齐的晶粒界面，其包含平行于电极界面延伸的许多晶界。 因此，氧空缺在切换期间被捕获和释放，而空位明显损失。 因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

公开(公告)号：US08779407B2

公开(公告)日：2014-07-15

申请号：US13367662

申请日：2012-02-07

申请人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

发明人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

IPC分类号： H01L29/02

CPC分类号： C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

公开(公告)号：US20130071984A1

公开(公告)日：2013-03-21

申请号：US13236481

申请日：2011-09-19

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.

摘要翻译： 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其具有设置在金属氧化物本体层上或其上的金属氧化物缓冲层。 金属氧化物本体层含有富金属氧化物材料，金属氧化物缓冲层含有贫金属氧化物。 由于金属氧化物本体层比金属氧化物缓冲层氧化较少或更金属，所以金属氧化物本体层的电阻小于金属氧化物缓冲层的电阻。 在一个实例中，金属氧化物本体层含有富金属氧化铪材料，金属氧化物缓冲层含有贫金属氧化锆材料。

公开(公告)号：US08546275B2

公开(公告)日：2013-10-01

申请号：US13236481

申请日：2011-09-19

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L45/146 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.

摘要翻译： 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其具有设置在金属氧化物本体层上或其上的金属氧化物缓冲层。 金属氧化物本体层含有富金属氧化物材料，金属氧化物缓冲层含有贫金属氧化物。 由于金属氧化物本体层比金属氧化物缓冲层氧化较少或更金属，所以金属氧化物本体层的电阻小于金属氧化物缓冲层的电阻。 在一个实例中，金属氧化物本体层含有富金属氧化铪材料，金属氧化物缓冲层含有贫金属氧化锆材料。

公开(公告)号：US20130200323A1

公开(公告)日：2013-08-08

申请号：US13367662

申请日：2012-02-07

申请人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

发明人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

IPC分类号： H01L45/00

CPC分类号： C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

摘要翻译： 公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。 至少一个电极是包括亚化学计量的过渡金属氮化物或氮氧化物的电阻电极，并且具有0.1至10Ωcm的电阻率。 电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。 还公开了用于第二电极的新颖制造方法。

公开(公告)号：US20130056702A1

公开(公告)日：2013-03-07

申请号：US13612000

申请日：2012-09-12

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

IPC分类号： H01L45/00 ,  B82Y10/00 ,  B82Y99/00

CPC分类号： H01L45/145 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

摘要翻译： 本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。 金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。 设置在金属氧化物层之间的界面有助于氧空位移动。 在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对准的晶界，其包含平行于电极界面延伸的许多晶界。 因此，氧空缺在切换期间被捕获和释放，而空位明显损失。 因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

公开(公告)号：US08878152B2

公开(公告)日：2014-11-04

申请号：US13408103

申请日：2012-02-29

申请人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Dipankar Pramanik

发明人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Dipankar Pramanik

IPC分类号： H01L29/02

CPC分类号： H01L45/16 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.

摘要翻译： 非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。 一个这样的氧隔离结构包括氧阻隔层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。 另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

公开(公告)号：US20130221307A1

公开(公告)日：2013-08-29

申请号：US13408103

申请日：2012-02-29

申请人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Dipankar Pramanik

发明人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Dipankar Pramanik

IPC分类号： H01L45/00

CPC分类号： H01L45/16 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.

摘要翻译： 非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。 一个这样的氧隔离结构包括氧阻隔层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。 另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

公开(公告)号：US09129894B2

公开(公告)日：2015-09-08

申请号：US13621371

申请日：2012-09-17

申请人： Imran Hashim ,  Tony Chiang ,  Vidyut Gopal ,  Yun Wang

发明人： Imran Hashim ,  Tony Chiang ,  Vidyut Gopal ,  Yun Wang

IPC分类号： G11C11/21 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC分类号： H01L45/1608 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.

摘要翻译： 提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。 转向元件可以是与开关层串联连接的晶体管。 由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。 包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。 在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。 存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。 一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。