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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08890253B2

    公开(公告)日：2014-11-18

    申请号：US13348961

    申请日：2012-01-12

    申请人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Yi-Chun Shih ,  Main-Gwo Chen

    发明人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Yi-Chun Shih ,  Main-Gwo Chen

    IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10

    CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7808

    摘要： A semiconductor device includes: a substrate including a first epitaxial layer that has a first electrical type, and a second epitaxial layer; a transistor that includes a source region and an insulating spacer; an inner surrounding structure including an annular trench and an insulating spacer; an outer surrounding structure that has a second electrical type opposite to the first electrical type, and that is disposed adjacent to an upper surface of the second epitaxial layer to surround and contact the inner surrounding structure; and a conductive structure connecting to the source region, and the inner and outer surrounding structures.

    摘要翻译： 半导体器件包括：包括具有第一电型的第一外延层和第二外延层的衬底; 晶体管，其包括源极区域和绝缘间隔物; 包括环形沟槽和绝缘垫片的内部周围结构; 外周围结构具有与第一电气类型相反的第二电气类型，并且邻近第二外延层的上表面设置以围绕和接触内周围结构; 以及连接到源极区域的导电结构以及内部和外部周围结构。

    Method for fabricating a power transistor
    3.
    发明授权
    Method for fabricating a power transistor 有权
    功率晶体管的制造方法

    公开(公告)号：US08404531B2

    公开(公告)日：2013-03-26

    申请号：US13349038

    申请日：2012-01-12

    申请人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Yi-Chun Shih ,  Main-Gwo Chen

    发明人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Yi-Chun Shih ,  Main-Gwo Chen

    IPC分类号： H01L21/337

    CPC分类号： H01L29/7802 ,  H01L21/2253 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/1095

    摘要： A method for fabricating a power transistor includes: (a) forming a trench in a substrate with a first electrical type; (b) diffusing second electrical type carriers into the substrate from the trench such that the substrate is formed into a first part and a second part that is diffused with the second electrical type carriers and that adjoins the trench, the first and second parts being crystal lattice continuous to each other; (c) forming a filling portion in the trench, the filling portion adjoining the second part; (d) performing a carrier-implanting process in the second part and the filling portion; and (e) forming over the substrate a gate structure that has a dielectric layer and a conductive layer.

    摘要翻译： 一种制造功率晶体管的方法包括：（a）在第一电气类型的衬底中形成沟槽; （b）从沟槽将第二电型载体扩散到衬底中，使得衬底形成为第一部分，第二部分与第二电气型载流子扩散并邻接沟槽，第一和第二部分是晶体 格子相互连续; （c）在所述沟槽中形成填充部分，所述填充部分邻接所述第二部分; （d）在第二部分和填充部分中执行载体植入过程; 和（e）在衬底上形成具有电介质层和导电层的栅极结构。

    METHOD FOR FABRICATING SUPER-JUNCTION POWER DEVICE WITH REDUCED MILLER CAPACITANCE
    4.
    发明申请
    METHOD FOR FABRICATING SUPER-JUNCTION POWER DEVICE WITH REDUCED MILLER CAPACITANCE 有权
    用于制造具有减少的MILLER电容的超级电力装置的方法

    公开(公告)号：US20120295410A1

    公开(公告)日：2012-11-22

    申请号：US13234132

    申请日：2011-09-15

    申请人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    发明人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66666 ,  H01L21/2255 ,  H01L21/2256 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/7811 ,  H01L29/7813

    摘要： A method for fabricating a super-junction semiconductor power device with reduced Miller capacitance includes the following steps. An N-type substrate is provided and a P-type epitaxial layer is formed on the N-type substrate. At least a trench is formed in the P-type epitaxial layer followed by forming a buffer layer on interior surface in the trench. An N-type dopant layer is filled into the trench and then the N-type dopant layer is etched to form a recessed structure at an upper portion of the trench. A gate oxide layer is formed, and simultaneously, dopants in the N-type dopant layer diffuse into the P-type epitaxial layer, forming an N-type diffusion layer. Finally, a gate conductor is filled into the recessed structure and an N-type source doped region is formed around the gate conductor in the P-type epitaxial layer.

    摘要翻译： 用于制造具有减小的米勒电容的超结半导体功率器件的方法包括以下步骤。 提供了N型衬底，并且在N型衬底上形成P型外延层。 至少在P型外延层中形成沟槽，随后在沟槽的内表面上形成缓冲层。 将N型掺杂剂层填充到沟槽中，然后蚀刻N型掺杂剂层以在沟槽的上部形成凹陷结构。 形成栅极氧化层，同时，N型掺杂剂层中的掺杂剂扩散到P型外延层中，形成N型扩散层。 最后，将栅极导体填充到凹陷结构中，并且在P型外延层中的栅极导体周围形成N型源极掺杂区。

    SEMICONDUCTOR POWER DEVICE
    5.
    发明申请
    SEMICONDUCTOR POWER DEVICE 有权
    半导体功率器件

    公开(公告)号：US20120306006A1

    公开(公告)日：2012-12-06

    申请号：US13227472

    申请日：2011-09-07

    申请人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    发明人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7811 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7803 ,  H01L29/7809

    摘要： A semiconductor power device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer. At least a recessed epitaxial structure is disposed within a cell region and the recessed epitaxial structure may be formed in a pillar or stripe shape. A first vertical diffusion region is disposed in the third semiconductor layer and the recessed epitaxial structure is surrounded by the first vertical diffusion region. A source conductor is disposed on the recessed epitaxial structure and a trench isolation is disposed within a junction termination region surrounding the cell region. In addition, the trench isolation includes a trench, a first insulating layer on an interior surface of the trench, and a conductive layer filled into the trench, wherein the source conductor connects electrically with the conductive layer.

    摘要翻译： 半导体功率器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层以及第二半导体层上的第三半导体层。 至少凹入的外延结构设置在单元区域内，并且凹入的外延结构可以形成为柱状或条形。 第一垂直扩散区域设置在第三半导体层中，并且凹入的外延结构被第一垂直扩散区域包围。 源极导体设置在凹陷的外延结构上，并且沟槽隔离设置在围绕电池区的连接终端区域内。 此外，沟槽隔离包括沟槽，在沟槽的内表面上的第一绝缘层和填充到沟槽中的导电层，其中源极导体与导电层电连接。

    INSULATED GATE BIPOLAR TRANSISTOR
    7.
    发明申请
    INSULATED GATE BIPOLAR TRANSISTOR 审中-公开
    绝缘栅双极晶体管

    公开(公告)号：US20120181576A1

    公开(公告)日：2012-07-19

    申请号：US13238189

    申请日：2011-09-21

    申请人： Yung-Fa LIN ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    发明人： Yung-Fa LIN ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7395 ,  H01L29/1095

    摘要： An insulated gate bipolar transistor includes: a collector layer; a drift layer formed on and connected to the collector layer; a gate structure including a dielectric layer formed on the drift layer, and a conductive layer formed on the dielectric layer; a first emitter structure including a well region formed within the drift layer and partially connected to the dielectric layer of the gate structure, a source region formed within the well region just underneath a top surface of the well region, and a first electrode formed on the top surface of the well region and connected to the well region and the source region; and a second emitter structure spaced apart from the gate structure and the first emitter structure, and including a bypass region formed on the top surface of the drift layer, and a second electrode formed on the bypass region.

    摘要翻译： 绝缘栅双极晶体管包括：集电极层; 形成在集电极层上并连接到集电极层的漂移层; 包括形成在所述漂移层上的电介质层的栅极结构和形成在所述电介质层上的导电层; 第一发射极结构，其包括形成在所述漂移层内且部分地连接到所述栅极结构的介电层的阱区，形成在所述阱区的顶表面正下方的阱区内的源极区，以及形成在所述阱区上的第一电极 并且连接到阱区和源极区; 以及与栅极结构和第一发射极结构间隔开的第二发射极结构，并且包括形成在漂移层的顶表面上的旁路区域和形成在旁路区域上的第二电极。

    METHOD FOR FABRICATING A POWER TRANSISTOR
    8.
    发明申请
    METHOD FOR FABRICATING A POWER TRANSISTOR 有权
    制造功率晶体管的方法

    公开(公告)号：US20120252176A1

    公开(公告)日：2012-10-04

    申请号：US13349038

    申请日：2012-01-12

    申请人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    发明人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7802 ,  H01L21/2253 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/1095

    摘要： A method for fabricating a power transistor includes: (a) forming a trench in a substrate with a first electrical type; (b) diffusing second electrical type carriers into the substrate from the trench such that the substrate is formed into a first part and a second part that is diffused with the second electrical type carriers and that adjoins the trench, the first and second parts being crystal lattice continuous to each other; (c) forming a filling portion in the trench, the filling portion adjoining the second part; (d) performing a carrier-implanting process in the second part and the filling portion; and (e) forming over the substrate a gate structure that has a dielectric layer and a conductive layer.

    摘要翻译： 一种制造功率晶体管的方法包括：（a）在第一电气类型的衬底中形成沟槽; （b）从沟槽将第二电气载体扩散到衬底中，使得衬底形成为第一部分，第二部分与第二电气型载流子扩散并邻接沟槽，第一和第二部分是晶体 格子相互连续; （c）在所述沟槽中形成填充部分，所述填充部分邻接所述第二部分; （d）在第二部分和填充部分中执行载体植入过程; 和（e）在衬底上形成具有电介质层和导电层的栅极结构。

    Semiconductor power device
    10.
    发明授权
    Semiconductor power device 有权
    半导体功率器件

    公开(公告)号：US08357972B2

    公开(公告)日：2013-01-22

    申请号：US13227472

    申请日：2011-09-07

    申请人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    发明人： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7811 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7803 ,  H01L29/7809

    摘要： A semiconductor power device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer. At least a recessed epitaxial structure is disposed within a cell region and the recessed epitaxial structure may be formed in a pillar or stripe shape. A first vertical diffusion region is disposed in the third semiconductor layer and the recessed epitaxial structure is surrounded by the first vertical diffusion region. A source conductor is disposed on the recessed epitaxial structure and a trench isolation is disposed within a junction termination region surrounding the cell region. In addition, the trench isolation includes a trench, a first insulating layer on an interior surface of the trench, and a conductive layer filled into the trench, wherein the source conductor connects electrically with the conductive layer.

    摘要翻译： 半导体功率器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层以及第二半导体层上的第三半导体层。 至少凹入的外延结构设置在单元区域内，并且凹入的外延结构可以形成为柱状或条形。 第一垂直扩散区域设置在第三半导体层中，并且凹入的外延结构被第一垂直扩散区域包围。 源极导体设置在凹陷的外延结构上，并且沟槽隔离设置在围绕电池区的连接终端区域内。 此外，沟槽隔离包括沟槽，在沟槽的内表面上的第一绝缘层和填充到沟槽中的导电层，其中源极导体与导电层电连接。