公开(公告)号：US20120027954A1

公开(公告)日：2012-02-02

申请号：US13189992

申请日：2011-07-25

申请人： ZHENDONG LIU ,  YONG CAO ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  THANH NGUYEN ,  MUHAMMAD RASHEED

发明人： ZHENDONG LIU ,  YONG CAO ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  THANH NGUYEN ,  MUHAMMAD RASHEED

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461 ,  H01J2237/3323

摘要： Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.

摘要翻译： 本文提供了用于沉积具有高厚度均匀性和低电阻率的薄膜的方法和设备。 在一些实施例中，磁控管组件包括分流板，可绕轴线旋转的分流板，耦合到分流板的内部闭环磁极和耦合分流板的外部闭环磁极，其中， 外部闭环磁极的磁场强度与内部闭环磁极的磁场强度小于约1.在一些实施例中，该比率为约0.57。 在一些实施例中，并联板和外闭环磁极具有心形形状。 还公开了一种利用RF和DC电力与本发明的磁控管组合的方法。

公开(公告)号：US20110278165A1

公开(公告)日：2011-11-17

申请号：US13106392

申请日：2011-05-12

申请人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

发明人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

IPC分类号： C23C14/04

CPC分类号： C23C14/35 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/34 ,  H01J37/3411

摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

摘要翻译： 本文提供了用于改善颗粒减少的装置。 在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面 被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积 材料从物理气相沉积室的目标。

公开(公告)号：US20110018073A1

公开(公告)日：2011-01-27

申请号：US12508820

申请日：2009-07-24

申请人： RONGJUN WANG ,  XIANMIN TANG ,  DENGLIANG YANG ,  ZHENDONG LIU ,  SRINIVAS GANDIKOTA

发明人： RONGJUN WANG ,  XIANMIN TANG ,  DENGLIANG YANG ,  ZHENDONG LIU ,  SRINIVAS GANDIKOTA

IPC分类号： H01L29/51 ,  H01L21/336 ,  H01L21/28

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517

摘要： Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comprising titanium aluminum or titanium aluminum nitride having a first nitrogen composition atop the dielectric layer; etching the work function layer to selectively remove at least a portion of the work function layer from atop the dielectric layer; depositing a layer comprising titanium aluminum or titanium aluminum nitride having a second nitrogen composition atop the work function layer and the substrate, wherein at least one of the work function layer or the layer comprises nitrogen; etching the layer and the dielectric layer to selectively remove a portion of the layer and the dielectric layer from atop the substrate; and annealing the substrate at a temperature less than about 1500 degrees Celsius.

摘要翻译： 提供具有调谐功能的衬底器件及其形成方法。 在一些实施例中，在衬底上形成器件可以包括在具有导电性的衬底顶上淀积介电层; 在所述电介质层的顶部沉积包含具有第一氮组成的钛铝或氮化铝钛的功函数层; 蚀刻功函数层以从电介质层顶部选择性地去除功函数层的至少一部分; 在所述功函数层和所述衬底的顶部上沉积包含具有第二氮组成的钛铝或氮化铝钛的层，其中所述功函数层或所述层中的至少一个包含氮; 蚀刻所述层和所述介电层以从所述衬底顶部选择性地去除所述层和所述电介质层的一部分; 并在低于约1500摄氏度的温度下退火衬底。