公开(公告)号：US20110278165A1

公开(公告)日：2011-11-17

申请号：US13106392

申请日：2011-05-12

申请人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

发明人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

IPC分类号： C23C14/04

CPC分类号： C23C14/35 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/34 ,  H01J37/3411

摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

摘要翻译： 本文提供了用于改善颗粒减少的装置。 在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面 被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积 材料从物理气相沉积室的目标。

公开(公告)号：US20110311735A1

公开(公告)日：2011-12-22

申请号：US13163817

申请日：2011-06-20

申请人： RONGJUN WANG ,  SALLY LOU ,  MUHAMMAD RASHEED ,  JIANXIN LEI ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  RYAN HANSON ,  TZA-JING GUNG ,  KEITH A. MILLER ,  THANH X. NGUYEN

发明人： RONGJUN WANG ,  SALLY LOU ,  MUHAMMAD RASHEED ,  JIANXIN LEI ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  RYAN HANSON ,  TZA-JING GUNG ,  KEITH A. MILLER ,  THANH X. NGUYEN

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/345 ,  H01J37/3461

摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.

摘要翻译： 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

公开(公告)号：US20120027954A1

公开(公告)日：2012-02-02

申请号：US13189992

申请日：2011-07-25

申请人： ZHENDONG LIU ,  YONG CAO ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  THANH NGUYEN ,  MUHAMMAD RASHEED

发明人： ZHENDONG LIU ,  YONG CAO ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  THANH NGUYEN ,  MUHAMMAD RASHEED

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461 ,  H01J2237/3323

摘要： Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.

摘要翻译： 本文提供了用于沉积具有高厚度均匀性和低电阻率的薄膜的方法和设备。 在一些实施例中，磁控管组件包括分流板，可绕轴线旋转的分流板，耦合到分流板的内部闭环磁极和耦合分流板的外部闭环磁极，其中， 外部闭环磁极的磁场强度与内部闭环磁极的磁场强度小于约1.在一些实施例中，该比率为约0.57。 在一些实施例中，并联板和外闭环磁极具有心形形状。 还公开了一种利用RF和DC电力与本发明的磁控管组合的方法。

公开(公告)号：US20130112554A1

公开(公告)日：2013-05-09

申请号：US13662380

申请日：2012-10-26

申请人： MUHAMMAD RASHEED ,  Keith A. Miller ,  Rongjun Wang

发明人： MUHAMMAD RASHEED ,  Keith A. Miller ,  Rongjun Wang

IPC分类号： C23C14/34

CPC分类号： C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地说，本文描述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

公开(公告)号：US20130256127A1

公开(公告)日：2013-10-03

申请号：US13436776

申请日：2012-03-30

申请人： DONNY YOUNG ,  ALAN RITCHIE ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

发明人： DONNY YOUNG ,  ALAN RITCHIE ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

IPC分类号： C23C14/35 ,  C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

公开(公告)号：US20130255576A1

公开(公告)日：2013-10-03

申请号：US13436133

申请日：2012-03-30

申请人： MUHAMMAD RASHEED ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  UDAY PAI

发明人： MUHAMMAD RASHEED ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  UDAY PAI

IPC分类号： C23C16/44 ,  C23C16/50

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

摘要翻译： 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

公开(公告)号：US20090025636A1

公开(公告)日：2009-01-29

申请号：US11829341

申请日：2007-07-27

申请人： MUHAMMAD RASHEED

发明人： MUHAMMAD RASHEED

IPC分类号： H01L21/683

CPC分类号： H01L21/68721 ,  C23C16/4585

摘要： A process kit cover for chemical vapor deposition processes is disclosed according to one embodiment of the invention. The process kit cover may include a protrusion from the top surface of the process kit cover. The protrusion is adjacent to a wafer facing surface. The protrusion decreases oxide buildup on the process kit cover and the wafer facing surface during repeated deposition processes. The process kit cover may also be in minimal thermal contact at the interface with a lower support structure, such as a ceramic collar or pedestal, according to another embodiment of the invention. Minimal thermal contact may be achieved by placing an insulator between the process kit cover and the lower support structure or by creating a gap or gaps between the process kit cover and the lower support structure. Ambient atmosphere may provide thermal insulating within the gap or gaps.

摘要翻译： 根据本发明的一个实施例公开了一种用于化学气相沉积工艺的工艺套件盖。 处理套件盖可以包括从处理套件盖的顶表面的突出部。 突起与面向晶片的表面相邻。 在重复沉积过程中，突起减少了工艺套件盖和面向晶片表面的氧化物积累。 根据本发明的另一个实施例，处理套件盖也可以在与下支撑结构（例如陶瓷套圈或基座）的界面处的最小热接触。 可以通过在处理套件盖和下支撑结构之间放置绝缘体或者通过在处理套件盖和下支撑结构之间产生间隙或间隙来实现最小的热接触。 环境气氛可以在间隙或间隙内提供绝热。

公开(公告)号：US20130256125A1

公开(公告)日：2013-10-03

申请号：US13435949

申请日：2012-03-30

申请人： DONNY YOUNG ,  ALAN RITCHIE ,  UDAY PAI ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

发明人： DONNY YOUNG ,  ALAN RITCHIE ,  UDAY PAI ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

IPC分类号： C23C14/34 ,  C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

摘要： Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

摘要翻译： 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。

公开(公告)号：US20130153412A1

公开(公告)日：2013-06-20

申请号：US13327689

申请日：2011-12-15

申请人： ALAN RITCHIE ,  DONNY YOUNG ,  KEITH A. MILLER ,  MUHAMMAD RASHEED ,  STEVE SANSONI ,  Uday Pai

发明人： ALAN RITCHIE ,  DONNY YOUNG ,  KEITH A. MILLER ,  MUHAMMAD RASHEED ,  STEVE SANSONI ,  Uday Pai

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US20110240464A1

公开(公告)日：2011-10-06

申请号：US13048440

申请日：2011-03-15

申请人： MUHAMMAD RASHEED ,  LARA HAWRYLCHAK ,  MICHAEL S. COX ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  ALAN RITCHIE

发明人： MUHAMMAD RASHEED ,  LARA HAWRYLCHAK ,  MICHAEL S. COX ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  ALAN RITCHIE

IPC分类号： C23C14/34

CPC分类号： H01J37/3405 ,  H01J37/3411

摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。