公开(公告)号：US20090311821A1

公开(公告)日：2009-12-17

申请号：US12214183

申请日：2008-06-16

Applicant: Zahariev Dimitrov ,  Chien-Rong Huang ,  Ching-Hsi Lin

Inventor： Zahariev Dimitrov ,  Chien-Rong Huang ,  Ching-Hsi Lin

IPC: H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  Y02E10/50

Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.

Abstract translation: 提供一种太阳能电池用硅基板的制造方法。 该方法包括用酸溶液在硅衬底上进行锯损坏去除（SDR）和表面宏纹理，使得硅衬底的表面变成不规则表面。 此后，用含有氧化剂和金属盐的水溶液对不规则表面进行金属活化选择性氧化，其中氧化剂选自过硫酸根离子，高锰酸根离子，重铬酸根离子及其混合物。 然后，用含有HF和H 2 O 2的水溶液蚀刻不规则表面，以形成纳米组织化的硅衬底。

公开(公告)号：US08124535B2

公开(公告)日：2012-02-28

申请号：US12658663

申请日：2010-02-11

Applicant: Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

Inventor： Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3105 ,  H01L21/00 ,  H01L31/0216 ,  H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/068 ,  Y02E10/547

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract translation: 提供一种制造太阳能电池的方法。 在硅衬底上进行锯损坏去除工艺。 对硅衬底的表面进行干表面处理，形成不规则表面。 对不规则表面进行金属活化的选择性氧化。 通过使用水溶液，蚀刻不规则表面以形成硅衬底的纳米增塑表面。 在硅衬底上进行掺杂剂扩散处理以形成P-N结。 在硅衬底上形成防反射层。 在硅衬底上形成电极。

公开(公告)号：US20110143484A1

公开(公告)日：2011-06-16

申请号：US12658663

申请日：2010-02-11

Applicant: Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

Inventor： Ching-Hsi Lin ,  Chien-Rong Huang ,  Dimitre Zahariev Dimitrov

IPC: H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/068 ,  Y02E10/547

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract translation: 提供一种制造太阳能电池的方法。 在硅衬底上进行锯损坏去除工艺。 对硅衬底的表面进行干表面处理，形成不规则表面。 对不规则表面进行金属活化的选择性氧化。 通过使用水溶液，蚀刻不规则表面以形成硅衬底的纳米增塑表面。 在硅衬底上进行掺杂剂扩散处理以形成P-N结。 在硅衬底上形成防反射层。 在硅衬底上形成电极。

公开(公告)号：US08053270B2

公开(公告)日：2011-11-08

申请号：US12214183

申请日：2008-06-16

Applicant: Dimitre Zahariev Dimitrov ,  Chien-Rong Huang ,  Ching-Hsi Lin

Inventor： Dimitre Zahariev Dimitrov ,  Chien-Rong Huang ,  Ching-Hsi Lin

IPC: H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  Y02E10/50

Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.

Abstract translation: 提供一种太阳能电池用硅基板的制造方法。 该方法包括用酸溶液在硅衬底上进行锯损坏去除（SDR）和表面宏纹理，使得硅衬底的表面变成不规则表面。 此后，用含有氧化剂和金属盐的水溶液对不规则表面进行金属活化选择性氧化，其中氧化剂选自过硫酸根离子，高锰酸根离子，重铬酸根离子及其混合物。 然后，用含有HF和H 2 O 2的水溶液蚀刻不规则表面，以形成纳米组织化的硅衬底。

公开(公告)号：US20120090673A1

公开(公告)日：2012-04-19

申请号：US13165670

申请日：2011-06-21

Applicant: Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

Inventor： Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

IPC: H01L31/06 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract translation: 公开了一种用于形成具有选择性发射体的太阳能电池的方法，包括选择性地去除衬底上的阻挡层的一部分以形成开口，对衬底进行纹理蚀刻工艺以在第二区域内形成第二纹理结构 所述阻挡层的开口，其中所述第一区域中的所述基板表面不从所述第一纹理结构变化。 第一纹理结构和第二纹理结构包括多个突出部分和凹陷部分。 第一纹理结构的相邻突出部之间的距离为L1，第二纹理结构的相邻突出部之间的距离为L2，L1为L2的2​​-20倍。 用于形成具有选择性发射极的太阳能电池的方法还包括去除阻挡层并进行掺杂工艺。

公开(公告)号：US08987038B2

公开(公告)日：2015-03-24

申请号：US13165670

申请日：2011-06-21

Applicant: Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

Inventor： Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

IPC: H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract translation: 公开了一种用于形成具有选择性发射体的太阳能电池的方法，包括选择性地去除衬底上的阻挡层的一部分以形成开口，对衬底进行纹理蚀刻工艺以在第二区域内形成第二纹理结构 所述阻挡层的开口，其中所述第一区域中的所述基板表面不从所述第一纹理结构变化。 第一纹理结构和第二纹理结构包括多个突出部分和凹陷部分。 第一纹理结构的相邻突出部之间的距离为L1，第二纹理结构的相邻突出部之间的距离为L2，L1为L2的2​​〜20倍。 用于形成具有选择性发射极的太阳能电池的方法还包括去除阻挡层并进行掺杂工艺。

公开(公告)号：US20130133728A1

公开(公告)日：2013-05-30

申请号：US13489443

申请日：2012-06-05

Applicant: Der-Chin Wu ,  Jui-Chung Shiao ,  Chien-Hsun Chen ,  Ching-Hsi Lin ,  Dimitre Zahariev Dimitrov

Inventor： Der-Chin Wu ,  Jui-Chung Shiao ,  Chien-Hsun Chen ,  Ching-Hsi Lin ,  Dimitre Zahariev Dimitrov

IPC: H01L31/075

CPC classification number: H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

Abstract: A back-contact heterojunction solar cell, having a first conductive type silicon substrate, a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first conductive type semiconductor layer, a second conductive type semiconductor layer and a second conductive type doped region is introduced. The first amorphous semiconductor layer disposed on the illuminated surface of the silicon substrate is an intrinsic semiconductor layer or is of the first conductive type. The second amorphous semiconductor layer disposed on the non-illuminated surface of the silicon substrate is an intrinsic semiconductor layer. The first and the second conductive type semiconductor layers are disposed on the second amorphous semiconductor layer. The second conductive type doped region is located in the silicon substrate under the second conductive type semiconductor layer and is in contact with the second amorphous semiconductor layer.

Abstract translation: 引入具有第一导电型硅衬底，第一非晶半导体层，第二非晶半导体层，第一导电类型半导体层，第二导电类型半导体层和第二导电型掺杂区域的背接触异质结太阳能电池 。 设置在硅衬底的被照射表面上的第一非晶半导体层是本征半导体层，或者是第一导电类型。 设置在硅衬底的非照射表面上的第二非晶半导体层是本征半导体层。 第一和第二导电型半导体层设置在第二非晶半导体层上。 第二导电型掺杂区域位于第二导电类型半导体层下面的硅衬底中，并与第二非晶半导体层接触。

公开(公告)号：US20090308446A1

公开(公告)日：2009-12-17

申请号：US12191317

申请日：2008-08-14

Applicant: Ching-Hsi Lin ,  Shih-Peng Hsu ,  Chien-Rong Huang

Inventor： Ching-Hsi Lin ,  Shih-Peng Hsu ,  Chien-Rong Huang

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L31/022425 ,  Y02E10/50

Abstract: A backside electrode layer and a fabricating method thereof are applicable for fabricating a solar cell. The backside electrode layer includes a first electrode layer and a second electrode layer. The first electrode layer is formed on a substrate and has a thickness smaller than 15 μm. The second electrode layer having patterns is formed on the first electrode layer. The first and second electrode layers are fabricated by a cofiring process. As the thickness of the first electrode layer is decreased and the second electrode layer is not a full coverage layer, the material usage of each electrode layer is reduced and the fabrication cost thereof is leveled down. Besides, a thinner electrode layer may avoid warp after the cofiring process.

Abstract translation: 背面电极层及其制造方法可用于制造太阳能电池。 背面电极层包括第一电极层和第二电极层。 第一电极层形成在基板上，其厚度小于15μm。 具有图案的第二电极层形成在第一电极层上。 第一和第二电极层通过共烧工艺制造。 随着第一电极层的厚度减小，第二电极层不是全覆盖层，每个电极层的材料使用减少，并且其制造成本降低。 此外，更薄的电极层可以避免在烧结过程之后的翘曲。

公开(公告)号：US20100147798A1

公开(公告)日：2010-06-17

申请号：US12371634

申请日：2009-02-16

Applicant: Ching-Hsi Lin ,  Chen-Hsun Du ,  Chung-Wen Lan

Inventor： Ching-Hsi Lin ,  Chen-Hsun Du ,  Chung-Wen Lan

IPC: B44C1/22

CPC classification number: H01L31/02363 ,  Y02E10/50 ,  Y10S323/906

Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.

Abstract translation: 提供了表面纹理化方法。 首先，在基板上形成聚合物膜。 之后，对基板进行加热处理。 加热处理导致具有岛状和/或微裂纹图案的织构化聚合物膜。 然后，使用纹理化聚合物膜作为掩模进行蚀刻处理，以便去除衬底的一部分以在衬底的表面上形成纹理结构。

公开(公告)号：US07504039B2

公开(公告)日：2009-03-17

申请号：US10941237

申请日：2004-09-15

Applicant: Laurence P. Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu ,  Jishi Ren ,  Ding Wu ,  Ching-Hsi Lin

Inventor： Laurence P. Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu ,  Jishi Ren ,  Ding Wu ,  Ching-Hsi Lin

IPC: B44C1/22

CPC classification number: H01J25/42 ,  G03F7/2022 ,  G03F7/24 ,  H01J23/165 ,  Y10T29/53439

Abstract: Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.

Abstract translation: 本发明的实施例包括螺旋形，环形条和隧道梯形慢波结构（SWS）。 还公开了微型制造这种SWS的方法的实施例。 还公开了包括这种SWS的高频电磁装置的实施例。 示例性的高频电磁装置可以包括行波管，行波管放大器，背波振荡器，作为线性加速器的一部分，微波功率模块，速调管或毫米波功率模块。